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新品推荐
DFN0606 MOSFET：小封装里的高效器件
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
查看详情
DFN0606 MOSFET：小封装里的高效器件2
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
查看详情
DFN0606 MOSFET：小封装里的高效器件3
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
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NBM7100ABQX
Coin cell battery life booster with adaptive power optimization
库存: 99999999
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
99999999
-
NBM7100BBQX
Coin cell battery life booster with adaptive power optimization
库存: 99999999
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
99999999
-
NCA9595PWJ
Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output, configuration
registers and programmable pull-up resistors
库存: 99999999
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
99999999
-
NCA9555BY-Q100HP
Q100 - Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output and configuration
registers
库存: 99999999
1+: ¥6.7940
500+: ¥6.1764
1000+: ¥5.8823
3000+: ¥5.6022
1+: ¥6.7940
500+: ¥6.1764
1000+: ¥5.8823
3000+: ¥5.6022
99999999
-
NCA9595PW-Q100J
Q100 - Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output, configuration
registers and programmable pull-up resistors
库存: 99999999
1+: ¥7.7814
500+: ¥7.0740
1000+: ¥6.7372
3000+: ¥6.4164
1+: ¥7.7814
500+: ¥7.0740
1000+: ¥6.7372
3000+: ¥6.4164
99999999
-
NCA9539PW-Q100J
Q100 - Low-voltage 16-bit I²C and SMBus low-power I/O expander with interrupt output,
reset pin and configuration registers
库存: 99964999
99964999
-
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P
库存: 99999999
1+: ¥10.1964
500+: ¥9.2694
1000+: ¥8.8280
3000+: ¥8.4077
1+: ¥10.1964
500+: ¥9.2694
1000+: ¥8.8280
3000+: ¥8.4077
99999999
-
GAN7R0-150LBEZ
150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array
(LGA) package
库存: 99999999
1+: ¥10.7330
500+: ¥9.7573
1000+: ¥9.2927
3000+: ¥8.8502
1+: ¥10.7330
500+: ¥9.7573
1000+: ¥9.2927
3000+: ¥8.8502
99999999
-
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
库存: 99999999
1+: ¥11.4843
500+: ¥10.4403
1000+: ¥9.9432
3000+: ¥9.4697
1+: ¥11.4843
500+: ¥10.4403
1000+: ¥9.9432
3000+: ¥9.4697
99999999
-
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
库存: 99999999
1+: ¥12.2357
500+: ¥11.1233
1000+: ¥10.5936
3000+: ¥10.0892
1+: ¥12.2357
500+: ¥11.1233
1000+: ¥10.5936
3000+: ¥10.0892
99999999
-
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode
库存: 99999999
1+: ¥14.1836
500+: ¥12.8942
1000+: ¥12.2802
3000+: ¥11.6954
1+: ¥14.1836
500+: ¥12.8942
1000+: ¥12.2802
3000+: ¥11.6954
99999999
-
GAN3R2-100CBEAZ
100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale
Package (WLCSP)
库存: 99999999
1+: ¥14.2749
500+: ¥12.9772
1000+: ¥12.3592
3000+: ¥11.7707
1+: ¥14.2749
500+: ¥12.9772
1000+: ¥12.3592
3000+: ¥11.7707
99999999
NBM7100ABQXNBM7100ANBM7100ABQXCoin cell battery life booster with adaptive power optimization库存: 999999991+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.575699999999
NBM7100BBQXNBM7100ANBM7100BBQXCoin cell battery life booster with adaptive power optimization库存: 999999991+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.575699999999
NCA9595PWJNCA9555NCA9595PWJLow-voltage 16-bit I²C and SMBus I/O expander with interrupt output, configuration registers and programmable pull-up resistors库存: 999999991+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.575699999999
NCA9555BY-Q100HPNCA9555NCA9555BY-Q100HPQ100 - Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output and configuration registers库存: 999999991+: ¥6.7940500+: ¥6.17641000+: ¥5.88233000+: ¥5.60221+: ¥6.7940500+: ¥6.17641000+: ¥5.88233000+: ¥5.602299999999
NCA9595PW-Q100JNCA9555NCA9595PW-Q100JQ100 - Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output, configuration registers and programmable pull-up resistors库存: 999999991+: ¥7.7814500+: ¥7.07401000+: ¥6.73723000+: ¥6.41641+: ¥7.7814500+: ¥7.07401000+: ¥6.73723000+: ¥6.416499999999
NCA9539PW-Q100JNCA9539NCA9539PW-Q100JQ100 - Low-voltage 16-bit I²C and SMBus low-power I/O expander with interrupt output, reset pin and configuration registers库存: 9996499999964999
GAN7R0-150LBEZGAN7R0GAN7R0-150LBEZ150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package库存: 999999991+: ¥10.7330500+: ¥9.75731000+: ¥9.29273000+: ¥8.85021+: ¥10.7330500+: ¥9.75731000+: ¥9.29273000+: ¥8.850299999999
GAN190-650FBEZGAN190GAN190-650FBEZ650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package库存: 999999991+: ¥11.4843500+: ¥10.44031000+: ¥9.94323000+: ¥9.46971+: ¥11.4843500+: ¥10.44031000+: ¥9.94323000+: ¥9.469799999999
GAN190-650EBEZGAN190GAN190-650EBEZ650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package库存: 999999991+: ¥12.2357500+: ¥11.12331000+: ¥10.59363000+: ¥10.08921+: ¥12.2357500+: ¥11.12331000+: ¥10.59363000+: ¥10.089299999999
NGW30T60M3DFQNGW30T60M3DFNGW30T60M3DFQ600 V, 30 A trench field-stop IGBT with full rated silicon diode库存: 999999991+: ¥14.1836500+: ¥12.89421000+: ¥12.28023000+: ¥11.69541+: ¥14.1836500+: ¥12.89421000+: ¥12.28023000+: ¥11.695499999999
GAN3R2-100CBEAZGAN3R2GAN3R2-100CBEAZ100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)库存: 999999991+: ¥14.2749500+: ¥12.97721000+: ¥12.35923000+: ¥11.77071+: ¥14.2749500+: ¥12.97721000+: ¥12.35923000+: ¥11.770799999999