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DFN0606 MOSFET：小封装里的高效器件
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
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DFN0606 MOSFET：小封装里的高效器件2
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
查看详情
DFN0606 MOSFET：小封装里的高效器件3
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
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NBM5100BBQX
Coin cell battery life booster with adaptive power optimization
库存: 2837
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
2837
-
NBM7100ABQX
Coin cell battery life booster with adaptive power optimization
库存: 2697
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
2697
-
NBM7100BBQX
Coin cell battery life booster with adaptive power optimization
库存: 2897
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
2897
-
NCA9595PWJ
Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output, configuration
registers and programmable pull-up resistors
库存: 0
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
0
-
NCA9555BY-Q100HP
Q100 - Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output and configuration
registers
库存: 0
1+: ¥6.7940
500+: ¥6.1764
1000+: ¥5.8823
3000+: ¥5.6022
1+: ¥6.7940
500+: ¥6.1764
1000+: ¥5.8823
3000+: ¥5.6022
0
-
NCA9595PW-Q100J
Q100 - Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output, configuration
registers and programmable pull-up resistors
库存: 0
1+: ¥7.7814
500+: ¥7.0740
1000+: ¥6.7372
3000+: ¥6.4164
1+: ¥7.7814
500+: ¥7.0740
1000+: ¥6.7372
3000+: ¥6.4164
0
-
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P
库存: 0
1+: ¥10.1964
500+: ¥9.2694
1000+: ¥8.8280
3000+: ¥8.4077
1+: ¥10.1964
500+: ¥9.2694
1000+: ¥8.8280
3000+: ¥8.4077
0
-
GAN7R0-150LBEZ
150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array
(LGA) package
库存: 989
1+: ¥10.7330
500+: ¥9.7573
1000+: ¥9.2927
3000+: ¥8.8502
1+: ¥10.7330
500+: ¥9.7573
1000+: ¥9.2927
3000+: ¥8.8502
989
-
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
库存: 2487
1+: ¥11.4843
500+: ¥10.4403
1000+: ¥9.9432
3000+: ¥9.4697
1+: ¥11.4843
500+: ¥10.4403
1000+: ¥9.9432
3000+: ¥9.4697
2487
-
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
库存: 2481
1+: ¥12.2357
500+: ¥11.1233
1000+: ¥10.5936
3000+: ¥10.0892
1+: ¥12.2357
500+: ¥11.1233
1000+: ¥10.5936
3000+: ¥10.0892
2481
-
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode
库存: 3000
1+: ¥14.1836
500+: ¥12.8942
1000+: ¥12.2802
3000+: ¥11.6954
1+: ¥14.1836
500+: ¥12.8942
1000+: ¥12.2802
3000+: ¥11.6954
3000
-
GAN3R2-100CBEAZ
100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale
Package (WLCSP)
库存: 1472
1+: ¥14.2749
500+: ¥12.9772
1000+: ¥12.3592
3000+: ¥11.7707
1+: ¥14.2749
500+: ¥12.9772
1000+: ¥12.3592
3000+: ¥11.7707
1472
NBM5100BBQXNBM5100ANBM5100BBQXCoin cell battery life booster with adaptive power optimization库存: 28371+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57562837
NBM7100ABQXNBM7100ANBM7100ABQXCoin cell battery life booster with adaptive power optimization库存: 26971+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57562697
NBM7100BBQXNBM7100ANBM7100BBQXCoin cell battery life booster with adaptive power optimization库存: 28971+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57562897
NCA9595PWJNCA9555NCA9595PWJLow-voltage 16-bit I²C and SMBus I/O expander with interrupt output, configuration registers and programmable pull-up resistors库存: 01+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57560
NCA9555BY-Q100HPNCA9555NCA9555BY-Q100HPQ100 - Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output and configuration registers库存: 01+: ¥6.7940500+: ¥6.17641000+: ¥5.88233000+: ¥5.60221+: ¥6.7940500+: ¥6.17641000+: ¥5.88233000+: ¥5.60220
NCA9595PW-Q100JNCA9555NCA9595PW-Q100JQ100 - Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output, configuration registers and programmable pull-up resistors库存: 01+: ¥7.7814500+: ¥7.07401000+: ¥6.73723000+: ¥6.41641+: ¥7.7814500+: ¥7.07401000+: ¥6.73723000+: ¥6.41640
GAN7R0-150LBEZGAN7R0GAN7R0-150LBEZ150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package库存: 9891+: ¥10.7330500+: ¥9.75731000+: ¥9.29273000+: ¥8.85021+: ¥10.7330500+: ¥9.75731000+: ¥9.29273000+: ¥8.8502989
GAN190-650FBEZGAN190GAN190-650FBEZ650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package库存: 24871+: ¥11.4843500+: ¥10.44031000+: ¥9.94323000+: ¥9.46971+: ¥11.4843500+: ¥10.44031000+: ¥9.94323000+: ¥9.46972487
GAN190-650EBEZGAN190GAN190-650EBEZ650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package库存: 24811+: ¥12.2357500+: ¥11.12331000+: ¥10.59363000+: ¥10.08921+: ¥12.2357500+: ¥11.12331000+: ¥10.59363000+: ¥10.08922481
NGW30T60M3DFQNGW30T60M3DFNGW30T60M3DFQ600 V, 30 A trench field-stop IGBT with full rated silicon diode库存: 30001+: ¥14.1836500+: ¥12.89421000+: ¥12.28023000+: ¥11.69541+: ¥14.1836500+: ¥12.89421000+: ¥12.28023000+: ¥11.69543000
GAN3R2-100CBEAZGAN3R2GAN3R2-100CBEAZ100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)库存: 14721+: ¥14.2749500+: ¥12.97721000+: ¥12.35923000+: ¥11.77071+: ¥14.2749500+: ¥12.97721000+: ¥12.35923000+: ¥11.77071472