- 产品
- 描述
- 价格
- 库存
- DC
- 数据手册
- 操作
BC817-16,21545 V, 500 mA NPN general-purpose transistorsHigh current
Three current gain selections
1+:¥0.0776
500+:¥0.0706
1000+:¥0.0672
3000+:¥0.0640
- 168,000
- 2528+
- 数据手册
PMBTA06,215NPN general purpose transistorHigh current (max. 500 mA)
Low voltage (max. 80 V)
1+:¥0.1102
500+:¥0.1002
1000+:¥0.0954
3000+:¥0.0909
- 150,000
- 2506+
- 数据手册
BCP56-16TF80 V, 1 A NPN medium power transistors- High collector current capability IC and ICM
- Three current gain selections
- High power dissipation capability
- AEC-Q101 qualified
1+:¥0.3693
500+:¥0.3357
1000+:¥0.3197
3000+:¥0.3045
- 112,000
- 2502+
- 数据手册
PMBT4401,18540 V, 600 mA NPN switching transistorHigh current (max. 600 mA)
Low voltage (max. 40 V)
AEC-Q101 qualified
1+:¥0.0846
500+:¥0.0770
1000+:¥0.0733
3000+:¥0.0698
- 30,000
- 2352+
- 数据手册
BC856B,21565 V, 100 mA PNP general-purpose transistorsLow current (max. 100 mA)
Low voltage (max. 65 V)
1+:¥0.0633
500+:¥0.0576
1000+:¥0.0548
3000+:¥0.0522
- 27,000
- 2522+
- 数据手册
BC847BPN,11545 V, 100 mA NPN/PNP general-purpose transistorLow collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
1+:¥0.1561
500+:¥0.1419
1000+:¥0.1351
3000+:¥0.1287
- 6,000
- 2425+
- 数据手册
BC847BVN,11545 V, 100 mA NPN/PNP general purpose transistor300 mW total power dissipation
Very small 1.6 mm x 1.2 mm ultra thin package
Replaces two SC-75/SC-89 packaged transistors on same PCB area
Reduced required PCB area
Reduced pick and place costs
1+:¥0.4490
500+:¥0.4081
1000+:¥0.3887
3000+:¥0.3702
- 16,000
- 2352+
- 数据手册
BC857A,21565 V, 100 mA PNP general-purpose transistorsLow current (max. 100 mA)
Low voltage (max. 65 V)
1+:¥0.0654
500+:¥0.0594
1000+:¥0.0566
3000+:¥0.0539
- 12,000
- 2340+
- 数据手册
BC847BV,115NPN general purpose double transistor300 mW total power dissipation
Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
Excellent coplanarity due to straight leads
Low collector capacitance
Improved thermal behaviour due to flat leads
Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
Reduces required board space
Reduces pick and place costs
1+:¥0.4490
500+:¥0.4081
1000+:¥0.3887
3000+:¥0.3702
- 12,000
- 2347+
- 数据手册
BC847B,21545 V, 100 mA NPN general-purpose transistorsGeneral-purpose transistors
SMD plastic packages
Three different gain selections
1+:¥0.0654
500+:¥0.0594
1000+:¥0.0566
3000+:¥0.0539
- 11,870
- 2515+
- 数据手册
PMBT2222AMBYL40 V, 600 mA NPN switching transistorHigh current (max. 600 mA)
Low voltage (max. 40V)
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
Power dissipation comparable to SOT23
1+:¥0.2367
500+:¥0.2152
1000+:¥0.2050
3000+:¥0.1952
- 10,000
- 2511+
- 数据手册
PBSS3515M,31515 V, 0.5 A PNP low VCEsat (BISS) transistorLow collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to reduced heat generation
Reduced printed-circuit board requirements.
AEC-Q101 qualified
1+:¥0.3276
500+:¥0.2978
1000+:¥0.2836
3000+:¥0.2701
- 10,000
- 2341+
- 数据手册
PBSS2515M,31515 V, 0.5 A NPN low VCEsat (BISS) transistorLow collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to reduced heat generation
Reduced printed-circuit board requirements.
AEC-Q101 qualified
1+:¥0.3276
500+:¥0.2978
1000+:¥0.2836
3000+:¥0.2701
- 10,000
- 2350+
- 数据手册
PBSS5240T,21540 V, 2 A PNP low VCEsat transistorLow collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat generation
1+:¥0.5428
500+:¥0.4935
1000+:¥0.4700
3000+:¥0.4476
- 9,000
- 2351+
- 数据手册
PBHV8118T,215180 V, 1 A NPN high-voltage low VCEsat transistorHigh voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
- AEC-Q101 qualified
Small SMD plastic package
1+:¥0.7725
500+:¥0.7023
1000+:¥0.6689
3000+:¥0.6370
- 9,000
- 2350+
- 数据手册
BC846W,11565 V, 100 mA NPN general-purpose transistorsGeneral-purpose transistors
SMD plastic package
Two different gain selections
1+:¥0.0888
500+:¥0.0807
1000+:¥0.0769
3000+:¥0.0732
- 9,000
- 2502+
- 数据手册
PBHV9050T,215500 V, 150 mA PNP high-voltage low VCEsat transistorHigh voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
1+:¥0.7725
500+:¥0.7023
1000+:¥0.6689
3000+:¥0.6370
- 8,950
- 2440+
- 数据手册
PMBT2907A,21560V, 600 mA, PNP switching transistor1+:¥0.0735
500+:¥0.0668
1000+:¥0.0636
3000+:¥0.0606
- 6,000
- 2525+
- 数据手册
PBHV9040T,215500 V, 0.25 A PNP high-voltage low VCEsat transistorHigh voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
Small SMD plastic package
1+:¥0.7725
500+:¥0.7023
1000+:¥0.6689
3000+:¥0.6370
- 6,000
- 2349+
- 数据手册
