- 产品
- 描述
- 价格
- 库存
- DC
- 数据手册
- 操作
PZTA42,115NPN high-voltage transistorLow current (max. 100 mA)
High voltage (max. 300 V)
1+:¥0.6558
500+:¥0.5962
1000+:¥0.5407
3000+:¥0.5407
- 99,998,999
- 数据手册
PMBTA42,215300 V, 100 mA NPN high-voltage transistorHigh voltage (max. 300 V)
AEC-Q101 qualified
¥3.0000
- 99,957,999
- 数据手册
PMBTA06,235NPN general purpose transistorHigh current (max. 500 mA)
Low voltage (max. 80 V)
1+:¥0.0987
500+:¥0.0898
1000+:¥0.0855
3000+:¥0.0814
- 99,999,999
- 数据手册
PMBT3906VS,11540 V, 200 mA PNP/PNP switching transistorDouble general-purpose switching transistor
Board-space reduction
Ultra small and flat lead SMD plastic package
1+:¥0.4293
500+:¥0.3903
1000+:¥0.3717
3000+:¥0.3540
- 0
- 数据手册
PMBT3904YS,11540 V, 200 mA NPN/NPN general-purpose double transistorGeneral-purpose double transistor
Board-space reduction
1+:¥0.1524
500+:¥0.1386
1000+:¥0.1320
3000+:¥0.1257
- 0
- 数据手册
PMBS3906,21540 V, 100 mA PNP general-purpose transistor100 mA collector current capability
1+:¥0.0687
500+:¥0.0624
1000+:¥0.0595
3000+:¥0.0566
- 99,999,999
- 数据手册
PBSS5540Z/8X40 V low VCEsat PNP transistorLow collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat generation
¥3.0000
- 99,985,999
- 数据手册
PBSS5360ZX60 V, 3 A PNP low VCEsat transistorLow collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
1+:¥0.8404
500+:¥0.7640
1000+:¥0.7276
3000+:¥0.6930
- 99,994,999
- 数据手册
PBSS5320T,21520 V, 3 A PNP low VCEsat transistorLow collector-emitter saturation voltage VCEsat and corresponding low RCEsat
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation
1+:¥0.6129
500+:¥0.5571
1000+:¥0.5306
3000+:¥0.5053
- 99,789,999
- 数据手册
PBSS5250THR50 V, 2 A PNP low VCEsat (BISS) transistorLow collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
Higher efficiency leading to less heat genereation
High temperature applications up to 175 °C
AEC-Q101 qualified
1+:¥0.7513
500+:¥0.6830
1000+:¥0.6505
3000+:¥0.6195
- 99,999,999
- 数据手册
PBSS5240TVL40 V, 2 A PNP low VCEsat transistorLow collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat generation
1+:¥0.3220
500+:¥0.2927
1000+:¥0.2788
3000+:¥0.2655
- 99,999,999
- 数据手册
PBSS5160TVL60 V, 1 A PNP low VCEsat transistorLow collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency due to less heat generation
Reduces Printed-Circuit Board (PCB) area required
Cost-effective replacement for medium power transistors BCP52 and BCX52
AEC-Q101 qualified
1+:¥0.2630
500+:¥0.2391
1000+:¥0.2277
3000+:¥0.2168
- 99,999,999
- 数据手册
PBSS4041PT,21560 V, 2.7 A PNP low VCEsat transistorVery low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
1+:¥1.1141
500+:¥1.0128
1000+:¥0.9646
3000+:¥0.9186
- 99,567,999
- 数据手册
PBSS4021PT,21520 V, 3.5 A PNP low VCEsat transistorVery low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
1+:¥1.1141
500+:¥1.0128
1000+:¥0.9646
3000+:¥0.9186
- 99,999,999
- 数据手册
PBSS304NXZ60 V, 4.7 A NPN low VCEsat transistorLow collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
1+:¥1.6572
500+:¥1.5065
1000+:¥1.4348
3000+:¥1.3665
- 99,999,999
- 数据手册
PBSS304NX,11560 V, 4.7 A NPN low VCEsat transistorLow collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
1+:¥1.6572
500+:¥1.5065
1000+:¥1.4348
3000+:¥1.3665
- 99,719,999
- 数据手册
PBHV9115X,115150 V, 1 A PNP high-voltage low VCEsat transistorHigh voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
1+:¥1.1270
500+:¥1.0245
1000+:¥0.9757
3000+:¥0.9293
- 99,979,999
- 数据手册
PBHV9040Z,115500 V, 0.25 A PNP high-voltage low VCEsat transistorHigh voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
1+:¥1.3330
500+:¥1.2119
1000+:¥1.1541
3000+:¥1.0992
- 99,974,999
- 数据手册
PBHV9040X,115500 V, 0.25 A PNP high-voltage low VCEsat transistorHigh voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
1+:¥1.0722
500+:¥0.9748
1000+:¥0.9283
3000+:¥0.8841
- 99,969,999
- 数据手册
PBHV8540Z,115500 V, 0.5 A NPN high-voltage low VCEsat transistorHigh voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
1+:¥1.3330
500+:¥1.2119
1000+:¥1.1541
3000+:¥1.0992
- 99,939,999
- 数据手册