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- 数据手册
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PDTC143ZT,21550 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥0.0867
500+:¥0.0788
1000+:¥0.0751
3000+:¥0.0715
- 1,037,995
- 数据手册
PDTC114ET-QRQ - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.0969
500+:¥0.0881
1000+:¥0.0839
3000+:¥0.0799
- 302,900
- 数据手册
PUMD3-QXQ - 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.1806
500+:¥0.1642
1000+:¥0.1563
3000+:¥0.1489
- 140,750
- 数据手册
BC807-40H-QRQ series - 45 V, 500 mA PNP general-purpose transistorsThree current gain selections
High-temperature applications up to 175 °C
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.2256
500+:¥0.2051
1000+:¥0.1953
3000+:¥0.1860
- 98,700
- 数据手册
PUMD2-QXQ - 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.1806
500+:¥0.1642
1000+:¥0.1563
3000+:¥0.1489
- 45,700
- 数据手册
PHPT60603PYX60 V, 3 A PNP high power bipolar transistorHigh thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
1+:¥1.1989
500+:¥1.0899
1000+:¥1.0380
3000+:¥0.9886
- 23,955
- 数据手册
PBSS5540X,13540 V, 5 A PNP low VCEsat transistorLow collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High efficiency leading to less heat generation.
AEC-Q101 qualified
1+:¥1.0122
500+:¥0.9201
1000+:¥0.8763
3000+:¥0.8346
- 20,000
- 数据手册
MJD31CAJ100 V, 3 A NPN high power bipolar transistorHigh thermal power dissipation capability
High energy efficiency due to less heat generation
Electrically similar to popular MJD31 series
Low collector emitter saturation voltage
Fast switching speeds
- AEC-Q101 qualified
1+:¥0.9653
500+:¥0.8776
1000+:¥0.8358
3000+:¥0.7960
- 20,000
- 数据手册
PBSS4540X,13540 V, 5 A NPN low VCEsat transistorHigh hFE and low VCEsat at high current operation
High collector current capability: IC maximum 4 A
High efficiency leading to less heat generation.
AEC-Q101 qualified
1+:¥0.9674
500+:¥0.8795
1000+:¥0.8376
3000+:¥0.7977
- 19,980
- 数据手册
BCX53-16,11580 V, 1 A PNP medium power transistorsHigh current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity
AEC-Q101 qualified
1+:¥0.4154
500+:¥0.3776
1000+:¥0.3596
3000+:¥0.3425
- 15,590
- 数据手册
BCM847QASZ45 V, 100 mA NPN/NPN matched double transistorsReduces component count
Reduces pick and place costs
Low package height of 0.37 mm
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
AEC-Q101 qualified
1+:¥0.7317
500+:¥0.6651
1000+:¥0.6335
3000+:¥0.6033
- 15,000
- 数据手册
PUMD16-QX50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplified circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.1806
500+:¥0.1642
1000+:¥0.1563
3000+:¥0.1489
- 12,000
- 数据手册
PHPT60410PYX40 V, 10 A PNP high power bipolar transistor1+:¥1.7438
500+:¥1.5853
1000+:¥1.5098
3000+:¥1.4379
- 12,000
- 数据手册
PBSS9110X,135100 V, 1 A PNP low VCEsat (BISS) transistorSOT89 package
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
AEC-Q101 qualified
1+:¥0.6787
500+:¥0.6170
1000+:¥0.5876
3000+:¥0.5596
- 12,000
- 数据手册
BCM62B,215PNP/PNP matched double transistorCurrent gain matching
AEC-Q101 qualified
1+:¥0.6755
500+:¥0.6141
1000+:¥0.5849
3000+:¥0.5570
- 12,000
- 数据手册
BC807-25-QRQ series - 45 V, 500 mA PNP general-purpose transistorsHigh current
Three current gain selections
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.0929
500+:¥0.0845
1000+:¥0.0804
3000+:¥0.0766
- 12,000
- 数据手册
PMBT3906-QRQ - PNP switching transistorCollector-emitter voltage VCEO = - 40 V
Collector-current capability IC = - 200 mA
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.0602
500+:¥0.0547
1000+:¥0.0521
3000+:¥0.0496
- 11,850
- 数据手册
PUMH13-QFQ - NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.1806
500+:¥0.1642
1000+:¥0.1563
3000+:¥0.1489
- 10,000
- 数据手册
PMBT3906MB,31540 V, 200 mA PNP switching transistorSingle general-purpose switching transistor
AEC-Q101 qualified
Ultra small SMD plastic package
Board-space reduction
Low package height of 0.37 mm
1+:¥0.2194
500+:¥0.1994
1000+:¥0.1899
3000+:¥0.1809
- 10,000
- 数据手册
PMBT3904MB,31540 V, 200 mA NPN switching transistorSingle general-purpose switching transistor
Ultra small SMD plastic package
Board-space reduction
Low package height of 0.37 mm
AEC-Q101 qualified
1+:¥0.2194
500+:¥0.1994
1000+:¥0.1899
3000+:¥0.1809
- 10,000
- 数据手册