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    共 1578件相关商品
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    PDTC114ET
    PDTC114ET-QR
    Q - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.0969

    500+:¥0.0881

    1000+:¥0.0839

    3000+:¥0.0799

    302,900
    数据手册
    PDTC143ZT
    PDTC143ZT,215
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.0867

    500+:¥0.0788

    1000+:¥0.0751

    3000+:¥0.0715

    221,995
    数据手册
    PUMH18
    PUMH18,115
    50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    81,000
    数据手册
    BCX19
    BCX19,215
    NPN general purpose transistor

    1+:¥0.1898

    500+:¥0.1725

    1000+:¥0.1643

    3000+:¥0.1565

    45,000
    数据手册
    PUMD3
    PUMD3-QX
    Q - 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.1806

    500+:¥0.1642

    1000+:¥0.1563

    3000+:¥0.1489

    45,000
    数据手册
    MJD31CA
    MJD31CAJ
    100 V, 3 A NPN high power bipolar transistor

    • High thermal power dissipation capability

    • High energy efficiency due to less heat generation

    • Electrically similar to popular MJD31 series

    • Low collector emitter saturation voltage

    • Fast switching speeds

    • AEC-Q101 qualified

    1+:¥0.9653

    500+:¥0.8776

    1000+:¥0.8358

    3000+:¥0.7960

    32,500
    数据手册
    BCX17
    BCX17,215
    PNP general purpose transistors

    1+:¥0.1898

    500+:¥0.1725

    1000+:¥0.1643

    3000+:¥0.1565

    21,000
    数据手册
    PBSS5540X
    PBSS5540X,135
    40 V, 5 A PNP low VCEsat transistor

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability: IC and ICM

    • High efficiency leading to less heat generation.

    • AEC-Q101 qualified

    1+:¥1.0122

    500+:¥0.9201

    1000+:¥0.8763

    3000+:¥0.8346

    20,000
    数据手册
    PBSS4540X
    PBSS4540X,135
    40 V, 5 A NPN low VCEsat transistor

    • High hFE and low VCEsat at high current operation

    • High collector current capability: IC maximum 4 A

    • High efficiency leading to less heat generation.

    • AEC-Q101 qualified

    1+:¥0.9674

    500+:¥0.8795

    1000+:¥0.8376

    3000+:¥0.7977

    19,980
    数据手册
    BCX53 series
    BCX53-16,115
    80 V, 1 A PNP medium power transistors

    • High current

    • Three current gain selections

    • High power dissipation capability

    • Exposed heatsink for excellent thermal and electrical conductivity

    • AEC-Q101 qualified

    1+:¥0.4154

    500+:¥0.3776

    1000+:¥0.3596

    3000+:¥0.3425

    18,690
    数据手册
    PUMH2
    PUMH2-QX
    Q - 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.1806

    500+:¥0.1642

    1000+:¥0.1563

    3000+:¥0.1489

    18,000
    数据手册
    BCM847QAS
    BCM847QASZ
    45 V, 100 mA NPN/NPN matched double transistors

    • Reduces component count

    • Reduces pick and place costs

    • Low package height of 0.37 mm

    • Current gain matching

    • Base-emitter voltage matching

    • Application-optimized pinout

    • AEC-Q101 qualified

    1+:¥0.7317

    500+:¥0.6651

    1000+:¥0.6335

    3000+:¥0.6033

    15,000
    数据手册
    PHPT60410PY
    PHPT60410PYX
    40 V, 10 A PNP high power bipolar transistor

    1+:¥1.7438

    500+:¥1.5853

    1000+:¥1.5098

    3000+:¥1.4379

    13,500
    数据手册
    PUMD12
    PUMD16-QX
    50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplified circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.1806

    500+:¥0.1642

    1000+:¥0.1563

    3000+:¥0.1489

    12,000
    数据手册
    PMBT3906
    PMBT3906-QR
    Q - PNP switching transistor

    • Collector-emitter voltage VCEO = - 40 V

    • Collector-current capability IC = - 200 mA

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.0602

    500+:¥0.0547

    1000+:¥0.0521

    3000+:¥0.0496

    12,000
    数据手册
    PIMC31
    PIMC31-QX
    Q - 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

    • 500 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.6265

    500+:¥0.5696

    1000+:¥0.5424

    3000+:¥0.5166

    12,000
    数据手册
    PBSS9110X
    PBSS9110X,135
    100 V, 1 A PNP low VCEsat (BISS) transistor

    • SOT89 package

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High efficiency leading to less heat generation

    • AEC-Q101 qualified

    1+:¥0.6787

    500+:¥0.6170

    1000+:¥0.5876

    3000+:¥0.5596

    12,000
    数据手册
    BCM62B
    BCM62B,215
    PNP/PNP matched double transistor

    • Current gain matching

    • AEC-Q101 qualified

    1+:¥0.6755

    500+:¥0.6141

    1000+:¥0.5849

    3000+:¥0.5570

    12,000
    数据手册
    PUMH13
    PUMH13-QF
    Q - NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.1806

    500+:¥0.1642

    1000+:¥0.1563

    3000+:¥0.1489

    10,000
    数据手册
    PMBT3906MB
    PMBT3906MB,315
    40 V, 200 mA PNP switching transistor

    • Single general-purpose switching transistor

    • AEC-Q101 qualified

    • Ultra small SMD plastic package

    • Board-space reduction

    • Low package height of 0.37 mm

    1+:¥0.2194

    500+:¥0.1994

    1000+:¥0.1899

    3000+:¥0.1809

    10,000
    数据手册