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    PESD4V0W1BCSF
    PESD9V0W1BCSFYL
    Extremely low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Surge robustness IPPM = 20 A according to IEC 61000-4-5

    • Extremely low diode capacitance Cd = 0.5 pF

    • Extremely low clamping to protect sensitive I/Os

    • Extremely low-inductance protection path to ground

    • ESD protection up to ± 30 kV according to IEC 61000-4-2

    • Ultra small SMD package

    ¥0.1147

    99,999,999
    数据手册
    PESD7V1R1BDSF
    PESD7V1R1BDSFYL
    Extremely low clamping bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Extremely low Harmonic Distortion, very reproducible due to monolithic construction

    • Extremely low diode capacitance, Cd = 0.13 pF at 1 MHz typical

    • Extremely low clamping voltage to protect sensitive transceivers

    • Extremely low leakage current: 1 nA at 7.1 V typical

    • Extremely low inductance protection path to ground

    • Very high surge robustness: 4.8 A for 8/20 µs pulse

    • Extremely low insertion loss: -0.28 dB at 10 GHz

    • Extremely low return loss: -19 dB at 10 GHz

    • 20 Gbps capable

    • Ultra-small SMD package

    1+:¥0.2039

    500+:¥0.1854

    1000+:¥0.1766

    3000+:¥0.1682

    0
    数据手册
    PESD5V0X1ULD
    PESD5V0X1ULD,315
    Ultra low capacitance unidirectional ESD protection diode
    • ESD protection of one line

    • Ultra low diode capacitance Cd = 0.95 pF

    • Ultra low clamping voltage: VCL = 8 V

    • Ultra low leakage current: IRM = 1 nA

    • ESD protection up to 8 kV

    • IEC 61000-4-2; level 4 (ESD)

    • Ultra small SMD plastic package

    • Solderable tin-plated side pads

    1+:¥0.3950

    500+:¥0.3591

    1000+:¥0.3420

    3000+:¥0.3257

    99,989,999
    数据手册
    PESD5V0X1UALD
    PESD5V0X1UALD,315
    Ultra low capacitance unidirectional ESD protection diode
    • ESD protection of one line

    • ESD protection up to 15 kV

    • Ultra low diode capacitance Cd = 1.55 pF

    • IEC 61000-4-2; level 4 (ESD)

    • Ultra small SMD plastic package

    • Low clamping voltage: VCL = 9 V

    • Solderable side pads

    • IEC 61000-4-5 (surge); IPP = 2 A

    • Package height typ. 0.37 mm

    • AEC-Q101 qualified

    • Ultra low leakage current: IRM = 1 nA

    1+:¥0.1803

    500+:¥0.1639

    1000+:¥0.1561

    3000+:¥0.1487

    99,999,999
    数据手册
    PESD5V0X1BCL
    PESD5V0X1BCL,315
    Extremely low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Extremely low capacitance: Cd = 0.49 pF

    • Low clamping voltage: VCL = 18 V

    • Ultra low leakage current: IRM = 1 nA

    • ESD protection up to 8 kV

    • IEC 61000-4-2; level 4 (ESD)

    • AEC-Q101 qualified

    1+:¥0.5116

    10000+:¥0.5116

    96,509,999
    数据手册
    PESD5V0V1BSF
    PESD5V0V1BSF,315
    Ultra low profile bidirectional very low capacitance ESD protection diode
    • Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

    • Bidirectional ESD protection of one line

    • Very low diode capacitance Cd = 3.5 pF

    • ESD protection up to ±15 kV according to IEC 61000-4-2

    • Ultra small SMD package

    • Symmetrical breakdown voltage

    1+:¥0.1470

    500+:¥0.1337

    1000+:¥0.1273

    3000+:¥0.1212

    99,972,999
    数据手册
    PESD5V0V1BL
    PESD5V0V1BLZ
    Very low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Very low diode capacitance: Cd = 11 pF

    • Max. peak pulse power: PPPM = 45 W

    • Low clamping voltage: VCL = 12.5 V

    • Ultra low leakage current: IRM = 1 nA

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPPM = 4.8 A

    1+:¥0.0837

    500+:¥0.0761

    1000+:¥0.0725

    3000+:¥0.0690

    99,999,999
    数据手册
    PESD5V0U1UB
    PESD5V0U1UB,115
    Ultra low capacitance unidirectional ESD protection diodes
    • Unidirectional ESD protection of one line

    • Ultra low diode capacitance: Cd = 2 pF

    • Very low leakage current: IRM = 1 nA

    • ESD protection up to 9 kV

    • IEC 61000-4-2; level 4 (ESD)

    1+:¥0.4261

    500+:¥0.3874

    1000+:¥0.3689

    3000+:¥0.3514

    99,999,999
    数据手册
    PESD5V0U1UA
    PESD5V0U1UA,115
    Ultra low capacitance unidirectional ESD protection diode
    • Unidirectional ESD protection of one line

    • ESD protection up to 9 kV

    • IEC 61000-4-2; level 4 (ESD)

    • Ultra low diode capacitance: Cd = 2 pF

    • Very low leakage current: IRM = 1 nA

    1+:¥0.3416

    500+:¥0.3766

    1000+:¥0.3587

    3000+:¥0.3416

    99,852,999
    数据手册
    PESD5V0S1USF
    PESD5V0S1USF,315
    Unidirectional ESD protection diode
    • ESD protection of one line

    • Super small SMD package

    • Ultra low leakage current IRM < 1 nA

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61643-321 (surge); IPPM = 3.5 A

    1+:¥0.2018

    500+:¥0.1834

    1000+:¥0.1747

    3000+:¥0.1664

    99,792,999
    数据手册
    PESD5V0L1USF
    PESD5V0L1USF,315
    Low capacitance unidirectional ESD protection diode
    • ESD protection of one line

    • Low diode capacitance Cd = 12 pF

    • Super small SMD package

    • Ultra low leakage current IRM < 1 nA

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61643-321 (surge); IPPM = 1.2 A

    1+:¥0.3950

    500+:¥0.3591

    1000+:¥0.3420

    3000+:¥0.3257

    99,954,999
    数据手册
    PESD5V0L1BA
    PESD5V0L1BAZ
    Low capacitance bidirectional ESD protection diode in SOD323
    • Bidirectional ESD protection of one line
    • Max. peak pulse power: Pppm = 500 W
    • Low clamping voltage: V(CL)R = 26 V
    • Ultra low leakage current: IRM < 0.09 μA
    • ESD protection > 23 kV
    • IEC 61000-4-2, level 4 (ESD)
    • IEC 61000-4-5 (surge); IPPM = 18 A
    • Very small SMD plastic package

    1+:¥0.3317

    500+:¥0.3015

    1000+:¥0.2871

    3000+:¥0.2735

    99,999,999
    数据手册
    PESD5V0F1BL
    PESD5V0F1BLZ
    Femtofarad bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Femtofarad capacitance: Cd = 400 fF

    • Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV

    • Very low leakage current: IRM < 1 nA

    • ESD protection up to 10 kV

    • IEC 61000-4-2; level 4 (ESD)

    1+:¥0.1749

    500+:¥0.1590

    1000+:¥0.1515

    3000+:¥0.1443

    99,999,999
    数据手册
    PESD4V0Y1BCSF
    PESD4V0Y1BCSFYL
    Extremely low clamping bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • ESD protection up to ±14 kV contact discharge according to IEC 61000-4-2

    • Backwards compatible to USB 3.2 due to VRWM = 4 V

    • Extremely low diode capacitance: Cd = 0.16 pF at 1 MHz

    • Extremely low clamping and trigger voltage (Vt1 = 6.9 V TLP) to protect sensitive transceivers

    • Extremely low insertion loss: -0.29 dB at 10 GHz

    • Extremely low return loss: -20.6 dB at 10 GHz

    • RF performance does not degrade over the operation voltage range

    • Extremely low leakage current: < 1 nA at 4 V

    • Extremely low inductance protection path to ground

    • IEC 61000-4-5 (surge): IPP = 6.9 A peak pulse (average measured)

    • IEC 61000-4-4 robust up to level 3 on I/O ports (corresponds to 40 A into a 50 Ohm termination)

    • Ultra-small SMD package

    ¥0.2196

    90,009,999
    数据手册
    PESD4V0X2UM
    PESD4V0X2UMZ
    Extremely low capacitance unidirectional ESD protection diode array
    • Unidirectional ESD protection of one line pair

    • VRWM = 4 V device

    • Extremely high surge robustness of 11.5 A for a 8/20 µs pulse

    • Extremely low diode capacitance, Cd = 0.82 pF typical

    • Extremely low clamping voltage to protect sensitive I/Os

    • ESD protection up to ±20 kV according to IEC 61000-4-2

    • Leadless ultra small SOT883-3 surface mount package

    • IEC 61000-4-4 robust up to level 4 for I/O data lines (corresponds to 40 A into a 50 Ohm termination)

    1+:¥0.2823

    500+:¥0.2566

    1000+:¥0.2444

    3000+:¥0.2328

    0
    数据手册
    PESD3V3X2UT
    PESD3V3X2UTR
    ESD protection diode
    • Reverse stand-off voltage: VRWM = 3.3 V

    • Low clamping voltage: VCL= 2.6 V at ITLP = 8 A

    • ESD protection up to 18 kV (IEC 61000-4-2)

    • Ultra low capacitance: Cd = 0.83 pF

    • ESD protection up to 18 kV (ISO 10605; C = 150 pF; R = 330 Ω)

    • High temperature capability: Tj = 175 °C

    1+:¥0.4508

    500+:¥0.4098

    1000+:¥0.3903

    3000+:¥0.3717

    0
    数据手册
    PESD3V3U1BCSF
    PESD3V3U1BCSFYL
    Ultra low clamping bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Ultra small leadless package with a height of 0.3 mm

    • IEC 61000-4-5 (surge); IPPM = 6.4 A (average measured)

    • Very low clamping voltage: VCL = 9 V max for 5.4 A, 8/20 µs pulse

    • Ultra low leakage current: IRM < 1 nA

    • ESD protection up to 20 kV

    1+:¥0.3499

    500+:¥0.3181

    1000+:¥0.3029

    3000+:¥0.2885

    99,810,999
    数据手册
    PESD3V3F1BSF
    PESD3V3F1BSFYL
    Extremely low clamping bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Extremely high surge robustness of 20 A 8/20 μs

    • Low diode capacitance Cd = 0.78 pF

    • Extremely low clamping voltage to protect sensitive I/Os: VCL = 3.4 V at 20 A 8/20 µs

    • Extremely low inductance protection path to ground

    • ESD protection up to ±20 kV according to IEC 61000-4-2

    • Ultra small SMD package

    ¥3.0000

    99,657,999
    数据手册
    PESD30VF1BSF
    PESD30VF1BSFYL
    Extremely low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • VRWM = 30 V

    • Extremely low diode capacitance Cd = 0.19 pF typical

    • Extremely low clamping voltage to protect sensitive I/Os

    • Extremely low-inductance protection path to ground

    • ESD protection up to ±10 kV contact discharge according to IEC 61000-4-2

    • Ultra small SMD package

    1+:¥0.2147

    500+:¥0.1951

    1000+:¥0.1859

    3000+:¥0.1770

    99,999,999
    数据手册
    PESD2USB30
    PESD2USB30Z
    ESD protection for differential data lines
    • Allows switching between PCMF2USB30 common mode filters with ESD protection and PESD2USB30 ESD protection in the same footprint.

    • The diodes provide protection to downstream components from ESD voltages up to +/- 15 kV on each signal line.

    • TrEOS process for very high system-level ESD robustness: superior protection of sensitive Systems on Chips (SoCs).

    • Industry-standard Wafer-Level Chip Scale package (WLCSP10).

    1+:¥1.6346

    500+:¥1.4860

    1000+:¥1.4153

    3000+:¥1.3479

    99,990,999
    数据手册