
Bidirectional ESD protection of one line
Surge robustness IPPM = 20 A according to IEC 61000-4-5
Extremely low diode capacitance Cd = 0.5 pF
Extremely low clamping to protect sensitive I/Os
Extremely low-inductance protection path to ground
ESD protection up to ± 30 kV according to IEC 61000-4-2
Ultra small SMD package
¥0.1147

Bidirectional ESD protection of one line
Extremely low Harmonic Distortion, very reproducible due to monolithic construction
Extremely low diode capacitance, Cd = 0.13 pF at 1 MHz typical
Extremely low clamping voltage to protect sensitive transceivers
Extremely low leakage current: 1 nA at 7.1 V typical
Extremely low inductance protection path to ground
Very high surge robustness: 4.8 A for 8/20 µs pulse
Extremely low insertion loss: -0.28 dB at 10 GHz
Extremely low return loss: -19 dB at 10 GHz
20 Gbps capable
Ultra-small SMD package
1+:¥0.2039
500+:¥0.1854
1000+:¥0.1766
3000+:¥0.1682

ESD protection of one line
Ultra low diode capacitance Cd = 0.95 pF
Ultra low clamping voltage: VCL = 8 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 8 kV
IEC 61000-4-2; level 4 (ESD)
Ultra small SMD plastic package
Solderable tin-plated side pads
1+:¥0.3950
500+:¥0.3591
1000+:¥0.3420
3000+:¥0.3257

ESD protection of one line
ESD protection up to 15 kV
Ultra low diode capacitance Cd = 1.55 pF
IEC 61000-4-2; level 4 (ESD)
Ultra small SMD plastic package
Low clamping voltage: VCL = 9 V
Solderable side pads
IEC 61000-4-5 (surge); IPP = 2 A
Package height typ. 0.37 mm
AEC-Q101 qualified
Ultra low leakage current: IRM = 1 nA
1+:¥0.1803
500+:¥0.1639
1000+:¥0.1561
3000+:¥0.1487

Bidirectional ESD protection of one line
Extremely low capacitance: Cd = 0.49 pF
Low clamping voltage: VCL = 18 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 8 kV
IEC 61000-4-2; level 4 (ESD)
AEC-Q101 qualified
1+:¥0.5116
10000+:¥0.5116

Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
Bidirectional ESD protection of one line
Very low diode capacitance Cd = 3.5 pF
ESD protection up to ±15 kV according to IEC 61000-4-2
Ultra small SMD package
Symmetrical breakdown voltage
1+:¥0.1470
500+:¥0.1337
1000+:¥0.1273
3000+:¥0.1212

Bidirectional ESD protection of one line
Very low diode capacitance: Cd = 11 pF
Max. peak pulse power: PPPM = 45 W
Low clamping voltage: VCL = 12.5 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 4.8 A
1+:¥0.0837
500+:¥0.0761
1000+:¥0.0725
3000+:¥0.0690

Unidirectional ESD protection of one line
Ultra low diode capacitance: Cd = 2 pF
Very low leakage current: IRM = 1 nA
ESD protection up to 9 kV
IEC 61000-4-2; level 4 (ESD)
1+:¥0.4261
500+:¥0.3874
1000+:¥0.3689
3000+:¥0.3514

Unidirectional ESD protection of one line
ESD protection up to 9 kV
IEC 61000-4-2; level 4 (ESD)
Ultra low diode capacitance: Cd = 2 pF
Very low leakage current: IRM = 1 nA
1+:¥0.3416
500+:¥0.3766
1000+:¥0.3587
3000+:¥0.3416

ESD protection of one line
Super small SMD package
Ultra low leakage current IRM < 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61643-321 (surge); IPPM = 3.5 A
1+:¥0.2018
500+:¥0.1834
1000+:¥0.1747
3000+:¥0.1664

ESD protection of one line
Low diode capacitance Cd = 12 pF
Super small SMD package
Ultra low leakage current IRM < 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61643-321 (surge); IPPM = 1.2 A
1+:¥0.3950
500+:¥0.3591
1000+:¥0.3420
3000+:¥0.3257

1+:¥0.3317
500+:¥0.3015
1000+:¥0.2871
3000+:¥0.2735

Bidirectional ESD protection of one line
Femtofarad capacitance: Cd = 400 fF
Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV
Very low leakage current: IRM < 1 nA
ESD protection up to 10 kV
IEC 61000-4-2; level 4 (ESD)
1+:¥0.1749
500+:¥0.1590
1000+:¥0.1515
3000+:¥0.1443

Bidirectional ESD protection of one line
ESD protection up to ±14 kV contact discharge according to IEC 61000-4-2
Backwards compatible to USB 3.2 due to VRWM = 4 V
Extremely low diode capacitance: Cd = 0.16 pF at 1 MHz
Extremely low clamping and trigger voltage (Vt1 = 6.9 V TLP) to protect sensitive transceivers
Extremely low insertion loss: -0.29 dB at 10 GHz
Extremely low return loss: -20.6 dB at 10 GHz
RF performance does not degrade over the operation voltage range
Extremely low leakage current: < 1 nA at 4 V
Extremely low inductance protection path to ground
IEC 61000-4-5 (surge): IPP = 6.9 A peak pulse (average measured)
IEC 61000-4-4 robust up to level 3 on I/O ports (corresponds to 40 A into a 50 Ohm termination)
Ultra-small SMD package
¥0.2196

Unidirectional ESD protection of one line pair
VRWM = 4 V device
Extremely high surge robustness of 11.5 A for a 8/20 µs pulse
Extremely low diode capacitance, Cd = 0.82 pF typical
Extremely low clamping voltage to protect sensitive I/Os
ESD protection up to ±20 kV according to IEC 61000-4-2
Leadless ultra small SOT883-3 surface mount package
IEC 61000-4-4 robust up to level 4 for I/O data lines (corresponds to 40 A into a 50 Ohm termination)
1+:¥0.2823
500+:¥0.2566
1000+:¥0.2444
3000+:¥0.2328

Reverse stand-off voltage: VRWM = 3.3 V
Low clamping voltage: VCL= 2.6 V at ITLP = 8 A
ESD protection up to 18 kV (IEC 61000-4-2)
Ultra low capacitance: Cd = 0.83 pF
ESD protection up to 18 kV (ISO 10605; C = 150 pF; R = 330 Ω)
High temperature capability: Tj = 175 °C
1+:¥0.4508
500+:¥0.4098
1000+:¥0.3903
3000+:¥0.3717

Bidirectional ESD protection of one line
Ultra small leadless package with a height of 0.3 mm
IEC 61000-4-5 (surge); IPPM = 6.4 A (average measured)
Very low clamping voltage: VCL = 9 V max for 5.4 A, 8/20 µs pulse
Ultra low leakage current: IRM < 1 nA
ESD protection up to 20 kV
1+:¥0.3499
500+:¥0.3181
1000+:¥0.3029
3000+:¥0.2885

Bidirectional ESD protection of one line
Extremely high surge robustness of 20 A 8/20 μs
Low diode capacitance Cd = 0.78 pF
Extremely low clamping voltage to protect sensitive I/Os: VCL = 3.4 V at 20 A 8/20 µs
Extremely low inductance protection path to ground
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
¥3.0000

Bidirectional ESD protection of one line
VRWM = 30 V
Extremely low diode capacitance Cd = 0.19 pF typical
Extremely low clamping voltage to protect sensitive I/Os
Extremely low-inductance protection path to ground
ESD protection up to ±10 kV contact discharge according to IEC 61000-4-2
Ultra small SMD package
1+:¥0.2147
500+:¥0.1951
1000+:¥0.1859
3000+:¥0.1770

Allows switching between PCMF2USB30 common mode filters with ESD protection and PESD2USB30 ESD protection in the same footprint.
The diodes provide protection to downstream components from ESD voltages up to +/- 15 kV on each signal line.
TrEOS process for very high system-level ESD robustness: superior protection of sensitive Systems on Chips (SoCs).
Industry-standard Wafer-Level Chip Scale package (WLCSP10).
1+:¥1.6346
500+:¥1.4860
1000+:¥1.4153
3000+:¥1.3479