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新品推荐
DFN0606 MOSFET：小封装里的高效器件
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
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DFN0606 MOSFET：小封装里的高效器件2
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
查看详情
DFN0606 MOSFET：小封装里的高效器件3
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
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NBM5100ABQX
Coin cell battery life booster with adaptive power optimization
库存: 2897
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
2897
-
NSF040120L4A0Q
1200 V, 40 mΩ, N-channel SiC MOSFET
库存: 0
1+: ¥42.9321
500+: ¥39.0292
1000+: ¥37.1707
3000+: ¥35.4006
1+: ¥42.9321
500+: ¥39.0292
1000+: ¥37.1707
3000+: ¥35.4006
0
-
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
库存: 0
1+: ¥57.7437
500+: ¥52.4943
1000+: ¥49.9946
3000+: ¥47.6139
1+: ¥57.7437
500+: ¥52.4943
1000+: ¥49.9946
3000+: ¥47.6139
0
-
BAS116DYX
Low-leakage dual switching diode
库存: 0
1+: ¥0.2469
500+: ¥0.2244
1000+: ¥0.2137
3000+: ¥0.2036
1+: ¥0.2469
500+: ¥0.2244
1000+: ¥0.2137
3000+: ¥0.2036
0
-
BAS116VYX
Low-leakage triple switching diode
库存: 0
1+: ¥0.3166
500+: ¥0.2878
1000+: ¥0.2741
3000+: ¥0.2611
1+: ¥0.3166
500+: ¥0.2878
1000+: ¥0.2741
3000+: ¥0.2611
0
-
BAS16DYX
High-speed dual switching diode
库存: 0
1+: ¥0.1309
500+: ¥0.1190
1000+: ¥0.1134
3000+: ¥0.1080
1+: ¥0.1309
500+: ¥0.1190
1000+: ¥0.1134
3000+: ¥0.1080
0
-
BAS40DYX
General-purpose dual Schottky diode
库存: 0
1+: ¥0.2361
500+: ¥0.2147
1000+: ¥0.2044
3000+: ¥0.1947
1+: ¥0.2361
500+: ¥0.2147
1000+: ¥0.2044
3000+: ¥0.1947
0
-
BAS40VYX
General-purpose triple Schottky diode
库存: 6000
1+: ¥0.2898
500+: ¥0.2634
1000+: ¥0.2509
3000+: ¥0.2390
1+: ¥0.2898
500+: ¥0.2634
1000+: ¥0.2509
3000+: ¥0.2390
6000
-
BAS70VYX
General-purpose triple Schottky diode
库存: 0
1+: ¥0.2898
500+: ¥0.2634
1000+: ¥0.2509
3000+: ¥0.2390
1+: ¥0.2898
500+: ¥0.2634
1000+: ¥0.2509
3000+: ¥0.2390
0
-
BAT54VY,115
Schottky barrier triple diode
库存: 0
1+: ¥0.2683
500+: ¥0.2439
1000+: ¥0.2323
3000+: ¥0.2213
1+: ¥0.2683
500+: ¥0.2439
1000+: ¥0.2323
3000+: ¥0.2213
0
-
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
库存: 0
1+: ¥98.3146
500+: ¥89.3769
1000+: ¥85.1208
3000+: ¥81.0675
1+: ¥98.3146
500+: ¥89.3769
1000+: ¥85.1208
3000+: ¥81.0675
0
-
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
库存: 2452
1+: ¥28.1205
500+: ¥25.5641
1000+: ¥24.3468
3000+: ¥23.1874
1+: ¥28.1205
500+: ¥25.5641
1000+: ¥24.3468
3000+: ¥23.1874
2452
NBM5100ABQXNBM5100ANBM5100ABQXCoin cell battery life booster with adaptive power optimization库存: 28971+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57562897
NSF040120L4A0QNSF040120L4A0NSF040120L4A0Q1200 V, 40 mΩ, N-channel SiC MOSFET库存: 01+: ¥42.9321500+: ¥39.02921000+: ¥37.17073000+: ¥35.40061+: ¥42.9321500+: ¥39.02921000+: ¥37.17073000+: ¥35.40060
GAN041-650WSBQGAN041GAN041-650WSBQ650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package库存: 01+: ¥57.7437500+: ¥52.49431000+: ¥49.99463000+: ¥47.61391+: ¥57.7437500+: ¥52.49431000+: ¥49.99463000+: ¥47.61390
BAT54VY,115BAT54VYBAT54VY,115Schottky barrier triple diode库存: 01+: ¥0.2683500+: ¥0.24391000+: ¥0.23233000+: ¥0.22131+: ¥0.2683500+: ¥0.24391000+: ¥0.23233000+: ¥0.22130
GAN063-650WSAQGAN063GAN063-650WSAQ650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET库存: 01+: ¥98.3146500+: ¥89.37691000+: ¥85.12083000+: ¥81.06751+: ¥98.3146500+: ¥89.37691000+: ¥85.12083000+: ¥81.06750
GAN080-650EBEZGAN080GAN080-650EBEZ650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package库存: 24521+: ¥28.1205500+: ¥25.56411000+: ¥24.34683000+: ¥23.18741+: ¥28.1205500+: ¥25.56411000+: ¥24.34683000+: ¥23.18742452
