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    PMEG100T10ELXD
    PMEG100T10ELXD-QX
    Q - 100 V, 1 A Trench Schottky barrier rectifier
    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.4061

    500+:¥0.3692

    1000+:¥0.3516

    3000+:¥0.3349

    40,270
    2440+
    数据手册
    vp_PESD6V3S1UL
    PESD6V3S1ULYL
    Unidirectional ESD protection diode
    • ESD protection of one line

    • Ultra small SMD plastic package

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPP = 10.4 A

    • Ultra low leakage current: IRM typ. 60 nA

    1+:¥0.1795

    500+:¥0.1632

    1000+:¥0.1554

    3000+:¥0.1480

    9,794
    2352+
    数据手册

    限量供应

    PMCXB290UE
    PMCXB290UEZ
    20 V, complementary N/P-channel Trench MOSFET
    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

    1+:¥0.4935

    500+:¥0.4486

    1000+:¥0.4272

    3000+:¥0.4069

    5000+:¥0.1795

    5,000
    2350+
    数据手册
    PMEG45T20EXD
    PMEG45T20EXD-QX
    Q - 45 V, 2 A Trench MEGA Schottky barrier rectifier
    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.4276

    500+:¥0.3887

    1000+:¥0.3702

    3000+:¥0.3526

    4,150
    2352+
    数据手册

    限量供应

    NCA9555
    NCA9555BYHP
    Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output and configuration registers
    • I²C-bus to parallel port expander

    • Operating power supply voltage range of 1.65 V to 5.5 V

    • Low standby current consumption:

      • 2.5 µA (maximum)

    • Schmitt-trigger action allows slow input transition and better switching noise immunity at the SCL and SDA inputs

      • Vhys = 0.10 × VCC (typical)

      • Noise filter on SCL and SDA inputs

    • 5 V tolerant I/Os

    • 16 I/O pins which power up configured in input state with weak pull-up resistor

    • Open-drain active LOW interrupt output (INT)

    • 400 kHz Fast-mode I²C-bus

    • Internal power-on reset

    • No glitch on power-up

    • Latched outputs with 25 mA drive maximum capability for directly driving LEDs

    • Latch-up performance exceeds 100 mA per JESD78, Class II

    • ESD protection:

      • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2000 V

      • CDM ANSI/ESDA/JEDEC JS-002 Class C3 exceeds 1000 V

    • Specified from -40 °C to +85 °C

    1+:¥5.6122

    500+:¥5.1020

    1000+:¥4.8591

    3000+:¥4.6277

    3,000
    2336+
    数据手册
    PNU65030EP
    PNU65030EPX
    650 V, 3 A ultrafast recovery rectifier
    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 3 A

    • Typical switching time trr of 41 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.1623

    500+:¥1.0566

    1000+:¥1.0063

    3000+:¥0.9584

    2,996
    2346+
    数据手册

    限量供应

    PSMN012
    PSMN012-100YSFX
    100YSF - NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package
    • Low Qrr for higher efficiency and lower spiking

    • Low QG × RDSon FOM for high efficiency switching applications

    • Strong avalanche energy rating (EAS)

    • Avalanche rated and 100% tested

    • Ha-free and RoHS compliant LFPAK56 package

    • Wave-solderable LFPAK56 package

    1+:¥3.4061

    500+:¥3.0965

    1000+:¥2.9490

    2995+:¥2.3930

    3000+:¥2.8086

    2,995
    2352+
    数据手册

    限量供应

    PSMN7R2
    PSMN7R2-100YSFX
    100YSF - NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
    • Low Qrr for higher efficiency and lower spiking

    • Low QG × RDSon FOM for high efficiency switching applications

    • Strong avalanche energy rating (EAS)

    • Avalanche rated and 100% tested

    • Ha-free and RoHS compliant LFPAK56 package

    • Wave-solderable LFPAK56 package

    1+:¥5.2673

    500+:¥4.7885

    1000+:¥4.5605

    2990+:¥3.5650

    3000+:¥4.3433

    2,990
    2350+
    数据手册
    PNU65030EP
    PNU65030EP-QX
    Q - 650 V, 3 A ultrafast recovery rectifier
    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 3 A

    • Typical switching time trr of 41 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥1.2194

    500+:¥1.1086

    1000+:¥1.0558

    3000+:¥1.0055

    2,990
    2346+
    数据手册
    GAN3R2
    GAN3R2-100CBEAZ
    100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm

    1+:¥13.5714

    500+:¥12.3376

    1000+:¥11.7501

    3000+:¥11.1906

    2,970
    2330+
    数据手册
    PNU65010EP
    PNU65010EPX
    650 V, 1 A ultrafast recovery rectifier
    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥0.7805

    500+:¥0.7096

    1000+:¥0.6758

    3000+:¥0.6436

    2,900
    2346+
    数据手册

    限量供应

    NBM7100A
    NBM7100BBQX
    Coin cell battery life booster with adaptive power optimization
    • Programmable constant battery load current: 2 mA to 16 mA

    • Protection against battery voltage dips (Brown-out)

    • Pulse output current: > 200 mA

    • Low ripple regulated programmable output voltage, VDH: 1.8 V to 3.6 V

    • Ultra-low standby current: < 50 nA

    • Peak conversion efficiency > 90% with adaptive optimization

    • Integrated fuel gauge

    • Small 16 pin lead-free package (SOT763-1/DHVQFN16; 2.5 mm × 3.5 mm × 0.85 mm)

    • Specified from -40 °C to +85 °C

    1+:¥6.4285

    500+:¥5.8441

    1000+:¥5.5658

    3000+:¥5.3008

    2,897
    2339+
    数据手册

    限量供应

    NBM5100A
    NBM5100ABQX
    Coin cell battery life booster with adaptive power optimization
    • Programmable constant battery load current: 2 mA to 16 mA

    • Protection against battery voltage dips (Brown-out)

    • Pulse output current: > 150 mA

    • Low ripple regulated programmable output voltage, VDH: 1.8 V to 3.6 V

    • Ultra-low standby current: < 50 nA

    • Peak conversion efficiency > 90% with adaptive optimization

    • Integrated fuel gauge

    • Integrated capacitor voltage balancing circuit

    • Small 16 pin lead-free package (SOT763-1/DHVQFN16; 2.5 mm × 3.5 mm × 0.85 mm)

    • Specified from -40 °C to +85 °C

    1+:¥6.4285

    500+:¥5.8441

    1000+:¥5.5658

    3000+:¥5.3008

    2,897
    2336+
    数据手册

    限量供应

    NBM5100A
    NBM5100BBQX
    Coin cell battery life booster with adaptive power optimization
    • Programmable constant battery load current: 2 mA to 16 mA

    • Protection against battery voltage dips (Brown-out)

    • Pulse output current: > 150 mA

    • Low ripple regulated programmable output voltage, VDH: 1.8 V to 3.6 V

    • Ultra-low standby current: < 50 nA

    • Peak conversion efficiency > 90% with adaptive optimization

    • Integrated fuel gauge

    • Integrated capacitor voltage balancing circuit

    • Small 16 pin lead-free package (SOT763-1/DHVQFN16; 2.5 mm × 3.5 mm × 0.85 mm)

    • Specified from -40 °C to +85 °C

    1+:¥6.4285

    500+:¥5.8441

    1000+:¥5.5658

    2940+:¥2.3230

    3000+:¥5.3008

    2,837
    2336+
    数据手册

    限量供应

    NBM7100A
    NBM7100ABQX
    Coin cell battery life booster with adaptive power optimization
    • Programmable constant battery load current: 2 mA to 16 mA

    • Protection against battery voltage dips (Brown-out)

    • Pulse output current: > 200 mA

    • Low ripple regulated programmable output voltage, VDH: 1.8 V to 3.6 V

    • Ultra-low standby current: < 50 nA

    • Peak conversion efficiency > 90% with adaptive optimization

    • Integrated fuel gauge

    • Small 16 pin lead-free package (SOT763-1/DHVQFN16; 2.5 mm × 3.5 mm × 0.85 mm)

    • Specified from -40 °C to +85 °C

    1+:¥6.4285

    500+:¥5.8441

    1000+:¥5.5658

    2800+:¥2.3230

    3000+:¥5.3008

    2,697
    2339+
    数据手册
    NPS4053
    NPS4053GH-Q100Z
    Q100 - 5.5 V, 55 mOhm load switch with precision adjustable current limit
    • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

      • Specified from -40 °C to +125 °C

    • Input operating voltage range (VIN): 2.5 V to 5.5 V

    • Maximum continuous current (IMAX): 2 A

    • ON resistance (RDS(on)):

      • VIN = 5.5 V: 55 mΩ (typical)

      • VIN = 3.6 V: 65 mΩ (typical)

      • VIN = 2.5 V: 80 mΩ (typical)

    • Adjustable current limit: 110 mA to 2.5 A

    • ±6 % current limit accuracy at 1.2 A

    • ILIM pin protection: can be shorted to ground or left floating

    • Constant current during current limit

    • No body diode when disabled (no current path from pin OUT to pin IN)

    • Active reverse voltage protection

    • Built in soft start

    • UL 62368 recognition

    • SOT457 (TSOP6) and SOT8044-1 (HWSON6) package option

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C2a exceeds 500 V

      • IEC 61000-4-2 contact discharge 8000 V

      • IEC 61000-4-2 air-gap discharge 15000 V

    1+:¥2.0408

    500+:¥1.8553

    1000+:¥1.7669

    3000+:¥1.6828

    2,682
    2452+
    数据手册
    GAN190
    GAN190-650FBEZ
    650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥10.9183

    500+:¥9.9257

    1000+:¥9.4530

    3000+:¥9.0029

    2,487
    2339+
    数据手册
    GAN190
    GAN190-650EBEZ
    650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥11.6326

    500+:¥10.5751

    1000+:¥10.0715

    3000+:¥9.5919

    2,481
    2337+
    数据手册
    GAN140
    GAN140-650FBEZ
    650FBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥17.0407

    500+:¥15.4916

    1000+:¥14.7539

    3000+:¥14.0513

    2,472
    2337+
    数据手册
    GAN140
    GAN140-650EBEZ
    650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥18.2652

    500+:¥16.6048

    1000+:¥15.8141

    3000+:¥15.0610

    2,465
    2331+
    数据手册