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    新品推荐共 90 件推荐产品
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    PMEG100T10ELXD
    PMEG100T10ELXD-QX
    Q - 100 V, 1 A Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.4061

    500+:¥0.3692

    1000+:¥0.3516

    3000+:¥0.3349

    54,000
    数据手册
    PESD32VF1BLS
    PESD32VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 32 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.4317

    500+:¥0.3925

    1000+:¥0.3738

    3000+:¥0.3560

    10,000
    数据手册
    PESD30VF1BLS
    PESD30VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 30 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.4133

    500+:¥0.3757

    1000+:¥0.3578

    3000+:¥0.3408

    10,000
    数据手册
    PESD24VF1BLS
    PESD24VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 24 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.3704

    500+:¥0.3367

    1000+:¥0.3207

    3000+:¥0.3054

    10,000
    数据手册
    PESD18VF1BLS
    PESD18VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.31 pF

    • High reverse standoff voltage VRWM = 18 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.3704

    500+:¥0.3367

    1000+:¥0.3207

    3000+:¥0.3054

    10,000
    数据手册
    PESD5V5C1UL
    PESD5V5C1UL-QYL
    Q - Extremely low clamping unidirectional ESD protection diode

    • Unidirectional ESD protection of one line

    • Ultra low capacitance: Cd < 0.6 pF

    • ESD protection starting from 15 kV (IEC 61000-4-2; ISO 10605)

    • Deep snap-back combined with dynamic resistance of 0.3 Ohm

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.3980

    500+:¥0.3618

    1000+:¥0.3446

    3000+:¥0.3282

    9,999
    数据手册
    vp_PESD6V3S1UL
    PESD6V3S1ULYL
    Unidirectional ESD protection diode

    • ESD protection of one line

    • Ultra small SMD plastic package

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPP = 10.4 A

    • Ultra low leakage current: IRM typ. 60 nA

    1+:¥0.1795

    500+:¥0.1632

    1000+:¥0.1554

    3000+:¥0.1480

    9,994
    数据手册
    PESD24VF1BBL
    PESD24VF1BBLYL
    Bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • High reverse standoff voltage VRWM = 24 V

    • Ultra-low diode capacitance Cd = 0.28 pF

    • Ultra small plastic package 1.0 x 0.6 x 0.48 mm

    • ESD protection up to ±10 kV contact discharge according to IEC 61000-4-2

    1+:¥0.3755

    500+:¥0.3413

    1000+:¥0.3251

    3000+:¥0.3096

    9,970
    数据手册
    PESD5V0R1BDSF
    PESD5V0R1BDSFYL
    Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance, Cd = 0.1 pF at 10 GHz

    • Extremely low clamping voltage to protect sensitive transceivers

    • Extremely low leakage current < 1 nA at 5 V

    • Extremely low inductance protection path to ground

    • Very high surge robustness: 4.8 A for 8/20 µs pulse

    • Extremely low insertion loss: -0.28 dB at 10 GHz

    • Extremely low return loss: -19 dB at 10 GHz

    • 20 Gbps capable

    • Ultra-small SMD package

    1+:¥0.1939

    500+:¥0.1763

    1000+:¥0.1679

    3000+:¥0.1599

    9,000
    数据手册
    PESD5V0R1BBSF
    PESD5V0R1BBSFYL
    Extremely low capacitance bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance Cd = 0.08 pF

    • Extremely low insertion loss αIL = -0.19 dB at 10 GHz

    • Extremely low return loss αRL = -23.5 dB at 10 GHz

    • Low clamping voltage to protect sensitive I/Os

    • Extremely low inductance protection path to ground

    • Ultra small SMD package

    • Extremely low leakage < 1 nA typical at 5 V

    1+:¥0.1939

    500+:¥0.1763

    1000+:¥0.1679

    3000+:¥0.1599

    9,000
    数据手册
    PESD5V0R1BCSF
    PESD5V0R1BCSFYL
    Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance, Cd = 0.085 pF at 10 GHz

    • Extremely low insertion loss: -0.25 dB at 10 GHz

    • Extremely low return loss: -19.4 dB at 10 GHz

    • Extremely low clamping voltage to protect sensitive transceivers

    • Extremely low leakage current < 1 nA at 5 V

    • Extremely low inductance protection path to ground

    • 20 Gbps capable

    • Ultra-small SMD package

    1+:¥0.1939

    500+:¥0.1763

    1000+:¥0.1679

    3000+:¥0.1599

    8,995
    数据手册
    PESD5V5C1BL
    PESD5V5C1BL-QYL
    Q - Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Ultra low capacitance: Cd < 0.3 pF

    • ESD protection starting from 15 kV (IEC 61000-4-2; ISO 10605)

    • Deep snap-back combined with dynamic resistance of 0.35 Ohm

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.4948

    500+:¥0.4498

    1000+:¥0.4284

    3000+:¥0.4080

    6,800
    数据手册

    限量供应

    PMCXB290UE
    PMCXB290UEZ
    20 V, complementary N/P-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

    1+:¥0.4935

    500+:¥0.4486

    1000+:¥0.4272

    3000+:¥0.4069

    5000+:¥0.1795

    5,000
    数据手册

    限量供应

    PMDXB590UPE
    PMDXB590UPEZ
    20 V, dual P-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

    1+:¥0.4794

    500+:¥0.4358

    1000+:¥0.4151

    3000+:¥0.3953

    4990+:¥0.1744

    4,990
    数据手册
    PMEG45T20EXD
    PMEG45T20EXD-QX
    Q - 45 V, 2 A Trench MEGA Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.4276

    500+:¥0.3887

    1000+:¥0.3702

    3000+:¥0.3526

    4,500
    数据手册
    PNU65010EP
    PNU65010EPX
    650 V, 1 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥0.7805

    500+:¥0.7096

    1000+:¥0.6758

    3000+:¥0.6436

    3,000
    数据手册

    限量供应

    NCA9555
    NCA9555BYHP
    Low-voltage 16-bit I²C and SMBus I/O expander with interrupt output and configuration registers

    • I²C-bus to parallel port expander

    • Operating power supply voltage range of 1.65 V to 5.5 V

    • Low standby current consumption:

      • 2.5 µA (maximum)

    • Schmitt-trigger action allows slow input transition and better switching noise immunity at the SCL and SDA inputs

      • Vhys = 0.10 × VCC (typical)

      • Noise filter on SCL and SDA inputs

    • 5 V tolerant I/Os

    • 16 I/O pins which power up configured in input state with weak pull-up resistor

    • Open-drain active LOW interrupt output (INT)

    • 400 kHz Fast-mode I²C-bus

    • Internal power-on reset

    • No glitch on power-up

    • Latched outputs with 25 mA drive maximum capability for directly driving LEDs

    • Latch-up performance exceeds 100 mA per JESD78, Class II

    • ESD protection:

      • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2000 V

      • CDM ANSI/ESDA/JEDEC JS-002 Class C3 exceeds 1000 V

    • Specified from -40 °C to +85 °C

    1+:¥5.6122

    500+:¥5.1020

    1000+:¥4.8591

    3000+:¥2.0280

    3,000
    数据手册

    限量供应

    NBM7100A
    NBM7100BBQX
    Coin cell battery life booster with adaptive power optimization

    • Programmable constant battery load current: 2 mA to 16 mA

    • Protection against battery voltage dips (Brown-out)

    • Pulse output current: > 200 mA

    • Low ripple regulated programmable output voltage, VDH: 1.8 V to 3.6 V

    • Ultra-low standby current: < 50 nA

    • Peak conversion efficiency > 90% with adaptive optimization

    • Integrated fuel gauge

    • Small 16 pin lead-free package (SOT763-1/DHVQFN16; 2.5 mm × 3.5 mm × 0.85 mm)

    • Specified from -40 °C to +85 °C

    1+:¥6.4285

    500+:¥5.8441

    1000+:¥5.5658

    3000+:¥2.3230

    3,000
    数据手册

    限量供应

    NBM5100A
    NBM5100ABQX
    Coin cell battery life booster with adaptive power optimization

    • Programmable constant battery load current: 2 mA to 16 mA

    • Protection against battery voltage dips (Brown-out)

    • Pulse output current: > 150 mA

    • Low ripple regulated programmable output voltage, VDH: 1.8 V to 3.6 V

    • Ultra-low standby current: < 50 nA

    • Peak conversion efficiency > 90% with adaptive optimization

    • Integrated fuel gauge

    • Integrated capacitor voltage balancing circuit

    • Small 16 pin lead-free package (SOT763-1/DHVQFN16; 2.5 mm × 3.5 mm × 0.85 mm)

    • Specified from -40 °C to +85 °C

    1+:¥6.4285

    500+:¥5.8441

    1000+:¥5.5658

    3000+:¥2.3230

    3,000
    数据手册
    MMBZ9V1AT
    MMBZ9V1AT-QR
    Q - Low capacitance unidirectional double ESD protection diode

    • Unidirectional ESD protection of two lines

    • Bidirectional ESD protection of one line

    • Very low diode capacitance: Cd ≤ 70 pF

    • Reverse stand-off voltage: VRWM = 6 V

    • Low clamping voltage: VCL = 20 V typ. at IPP = 10.5 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.1602

    500+:¥0.1456

    1000+:¥0.1387

    3000+:¥0.1321

    3,000
    数据手册