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共 61件相关商品

产品
描述
价格
库存
数据手册
操作

PMP4201V,115

45 V, 100 mA NPN/NPN matched double transistor

Current gain matching
Base-emitter voltage matching
Application-optimized pinout

1+:¥0.9256

500+:¥0.8414

1000+:¥0.8014

3000+:¥0.7632

12,000

数据手册

PMP5201V,115

45 V, 100 mA PNP/PNP matched double transistor

Current gain matching
Base-emitter voltage matching
Application-optimized pinout

1+:¥0.9256

500+:¥0.8414

1000+:¥0.8014

3000+:¥0.7632

4,000

数据手册

BSP52,115

NPN Darlington transistor

High current of 1 A
Low voltage of 80 V
Integrated diode and resistor

1+:¥1.2092

500+:¥1.0993

1000+:¥1.0470

3000+:¥0.9971

4,000

数据手册

BCM847BV,115

NPN/NPN matched double transistor

Current gain matching
Base-emitter voltage matching
Drop-in replacement for standard double transistors

1+:¥0.7175

500+:¥0.6522

1000+:¥0.6212

3000+:¥0.5916

4,000

数据手册

PBSM5240PFH,115

40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

Very low collector-emitter saturation voltage V_CEsat
High collector current capability I_C and I_CM
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1+:¥0.9256

500+:¥0.8414

1000+:¥0.8014

3000+:¥0.7632

3,000

数据手册

PBLS6003D,115

60 V, 1 A PNP loadswitch double transistor

Low V_CEsat transistor and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
AEC-Q101 qualified

1+:¥0.5573

500+:¥0.5066

1000+:¥0.4825

3000+:¥0.4595

3,000

数据手册

PBLS2021D,115

20 V, 1.8 A PNP BISS loadswitch

Low V_CEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified

1+:¥0.9663

500+:¥0.8785

1000+:¥0.8366

3000+:¥0.7968

3,000

数据手册

PBLS4003Y,115

40 V 500 mA PNP/NPN loadswitch double transistor

Low V_CEsat and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count

1+:¥0.5541

500+:¥0.5037

1000+:¥0.4797

3000+:¥0.4569

2,900

数据手册

BCV49,115

NPN Darlington transistor

High current (max. 500 mA)
Low voltage (max. 60 V)
High DC current gain (min. 10000)
AEC-Q101 qualified

1+:¥0.8777

500+:¥0.7979

1000+:¥0.7599

3000+:¥0.7237

2,000

数据手册

BCV48,115

PNP Darlington transistor

Very high DC current gain (min. 10000)
High current (max. 500 mA)
Low voltage (max. 60 V)
AEC-Q101 qualified

1+:¥0.8777

500+:¥0.7979

1000+:¥0.7599

3000+:¥0.7237

2,000

数据手册

PZTA14,135

NPN Darlington transistor

High current (max. 500 mA)
Low voltage (max. 30 V)
AEC-Q101 qualified

1+:¥0.7735

500+:¥0.7032

1000+:¥0.6697

3000+:¥0.6378

数据手册

PZTA14,115

NPN Darlington transistor

High current (max. 500 mA)
Low voltage (max. 30 V)
AEC-Q101 qualified

1+:¥0.7735

500+:¥0.7032

1000+:¥0.6697

3000+:¥0.6378

数据手册

PMP5501V,115

45 V, 100 mA PNP/PNP matched double transistor

Current gain matching
Base-emitter voltage matching
Application-optimized pinout

1+:¥0.6367

500+:¥0.5788

1000+:¥0.5513

3000+:¥0.5250

数据手册

PMP5201Y,135

45 V, 100 mA PNP/PNP matched double transistor

Current gain matching
Base-emitter voltage matching
Application-optimized pinout

1+:¥0.8440

500+:¥0.7672

1000+:¥0.7307

3000+:¥0.6959

数据手册

PMP5201Y,115

45 V, 100 mA PNP/PNP matched double transistor

Current gain matching
Base-emitter voltage matching
Application-optimized pinout

1+:¥0.8440

500+:¥0.7672

1000+:¥0.7307

3000+:¥0.6959

数据手册

PMP4501V,115

45 V, 100 mA NPN/NPN matched double transistor

Current gain matching
Base-emitter voltage matching
Application-optimized pinout

1+:¥0.6367

500+:¥0.5788

1000+:¥0.5513

3000+:¥0.5250

数据手册

PMP3906AYSH

40 V, 200 mA PNP/PNP matched double transistor

Current gain matching
Base-emitter voltage matching
Application-optimized pinout

1+:¥0.7705

500+:¥0.7004

1000+:¥0.6671

3000+:¥0.6353

数据手册

PBSM5240PF,115

40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

Very low collector-emitter saturation voltage V_CEsat
High collector current capability I_C and I_CM
High collector current gain (h_FE) at high I_C
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

¥2.4562

数据手册