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- 描述
- 价格
- 库存
- DC
- 数据手册
- 操作
PZTA14,135NPN Darlington transistorHigh current (max. 500 mA)
Low voltage (max. 30 V)
AEC-Q101 qualified
1+:¥0.8136
500+:¥0.7396
1000+:¥0.7044
3000+:¥0.6708
- 99,987,999
- 数据手册
BC850C,215NPN general purpose transistorLow current (max. 100 mA)
Low voltage (max. 45 V)
AEC-Q101 qualified
¥0.0894
- 99,996,999
- 数据手册
PMP4201V,11545 V, 100 mA NPN/NPN matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥0.9735
500+:¥0.8850
1000+:¥0.8428
3000+:¥0.8027
- 0
- 2351+
- 数据手册
PMP5201Y,11545 V, 100 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥0.8876
500+:¥0.8069
1000+:¥0.7685
3000+:¥0.7319
- 3,000
- 2446+
- 数据手册
PZTA14,115NPN Darlington transistorHigh current (max. 500 mA)
Low voltage (max. 30 V)
AEC-Q101 qualified
1+:¥0.8136
500+:¥0.7396
1000+:¥0.7044
3000+:¥0.6708
- 0
- 数据手册
PMP5501V,11545 V, 100 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥0.6697
500+:¥0.6089
1000+:¥0.5799
3000+:¥0.5522
- 0
- 数据手册
PMP5201Y,13545 V, 100 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥0.8876
500+:¥0.8069
1000+:¥0.7685
3000+:¥0.7319
- 0
- 数据手册
PMP5201V,11545 V, 100 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥0.9735
500+:¥0.8850
1000+:¥0.8428
3000+:¥0.8027
- 0
- 2347+
- 数据手册
PMP4501V,11545 V, 100 mA NPN/NPN matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥0.6697
500+:¥0.6089
1000+:¥0.5799
3000+:¥0.5522
- 0
- 数据手册
PMP3906AYSH40 V, 200 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥0.8103
500+:¥0.7367
1000+:¥0.7016
3000+:¥0.6682
- 0
- 数据手册
PBSM5240PFH,11540 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETVery low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1+:¥0.9735
500+:¥0.8850
1000+:¥0.8428
3000+:¥0.8027
- 0
- 2326+
- 数据手册
PBSM5240PF,11540 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETVery low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
¥2.4562
- 0
- 数据手册
PBLS6024D,11560 V, 1.5 A PNP loadswitchLow VCEsat and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥1.0164
500+:¥0.9240
1000+:¥0.8800
3000+:¥0.8381
- 0
- 数据手册
PBLS6023D,11560 V, 1.5 A PNP BISS loadswitchLow VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥1.0164
500+:¥0.9240
1000+:¥0.8800
3000+:¥0.8381
- 0
- 数据手册
PBLS6022D,11560 V, 1.5 A PNP BISS loadswitchLow VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥1.0164
500+:¥0.9240
1000+:¥0.8800
3000+:¥0.8381
- 0
- 数据手册
PBLS6021D,11560 V, 1.5 A PNP BISS loadswitchLow VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥1.0164
500+:¥0.9240
1000+:¥0.8800
3000+:¥0.8381
- 0
- 数据手册