
Wide supply voltage range from 2.0 to 6.0 V
CMOS low power dissipation
High noise immunity
Octal bidirectional bus interface
Non-inverting 3-state outputs
Input levels:
For 74HC245: CMOS level
For 74HCT245: TTL level
Complies with JEDEC standards
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
¥1.7866

1+:¥16.0566
500+:¥14.5969
1000+:¥13.9018
3000+:¥13.2398

Average forward current: IF(AV) ≤ 3 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bond technology
Small and flat lead SMD plastic package
Suitable for both reflow and wave soldering
AEC-Q101 qualified
¥3.0000

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM AEC-Q100-002 revision D exceeds 2500 V
CDM AEC-Q100-011 revision B exceeds 1000 V
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
¥2.6241

Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
¥2.2820

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM AEC-Q100-002 revision D exceeds 2500 V
CDM AEC-Q100-011 revision B exceeds 1000 V
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
¥2.6412

Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
¥2.2970

Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
¥2.5276

Specified from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
¥2.2820

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM AEC-Q100-002 revision D exceeds 2500 V
CDM AEC-Q100-011 revision B exceeds 1000 V
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
¥2.6241

Specified from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
¥2.2970

Specified from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
¥2.5276

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM AEC-Q100-002 revision D exceeds 2500 V
CDM AEC-Q100-011 revision B exceeds 1000 V
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
¥2.9104

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 3.0 V to 15.0 V
CMOS low power dissipation
High noise immunity
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Complies with JEDEC standard JESD 13-B
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)
¥2.2277

Wide supply voltage range from 3.0 V to 15.0 V
CMOS low power dissipation
High noise immunity
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Complies with JEDEC standard JESD 13-B
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
¥2.3841

AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1+:¥9.4880
500+:¥8.6255
1000+:¥8.2147
3000+:¥7.8235

AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
1+:¥13.8027
500+:¥12.5479
1000+:¥11.9504
3000+:¥11.3813

AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1+:¥7.9596
500+:¥7.2360
1000+:¥6.8914
3000+:¥6.5633

1+:¥11.4071
500+:¥10.3701
1000+:¥9.8762
3000+:¥9.4060