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74HC4051PW,1188-channel analog multiplexer/demultiplexerWide analog input voltage range from -5 V to +5 V
CMOS low power dissipation
High noise immunity
Complies with JEDEC standards
- JESD8C (2.7 V to 3.6 V)
- JESD7A (2.0 V to 6.0 V)
- Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Low ON resistance:
80 Ω (typical) at VCC - VEE = 4.5 V
70 Ω (typical) at VCC - VEE = 6.0 V
60 Ω (typical) at VCC - VEE = 9.0 V
Logic level translation: to enable 5 V logic to communicate with ±5 V analog signals
Typical ‘break before make’ built-in
ESD protection:
HBM: ANSI/ESDA/Jedec JS-001 Class 2 exceeds 2000 V
CDM: ANSI/ESDA/Jedec JS-002 Class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
1+:¥0.7756
484+:¥0.4446
500+:¥0.7050
1000+:¥0.6715
3000+:¥0.6395
- 180,484
- 2347+
- 数据手册
限量供应
74AHCT1G79GW,125Single D-type flip-flop; positive-edge triggerWide supply voltage range from 2.0 to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low power dissipation
Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
Symmetrical output impedance
Balanced propagation delays
Input levels:
For 74AHC1G79: CMOS level
For 74AHCT1G79: TTL level
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +125 °C
1+:¥0.3479
500+:¥0.3163
1000+:¥0.3012
3000+:¥0.1257
- 99,000
- 2322+
- 数据手册
限量供应
BUK9Y8R7-60E,11560E - N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
1+:¥3.3745
500+:¥3.0677
1000+:¥2.9216
3000+:¥2.7825
4500+:¥1.9064
- 64,500
- 2352+
- 数据手册
限量供应
BSS84AKM,31550 V, 230 mA P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
1+:¥0.3344
500+:¥0.3040
1000+:¥0.2895
3000+:¥0.2757
10000+:¥0.1272
56398+:¥0.1272
- 56,398
- 2348+
- 数据手册
限量供应
74HC174D,653Hex D-type flip-flop with reset; positive-edge triggerWide supply voltage range from 2.0 to 6.0 V
CMOS low power dissipation
High noise immunity
Input levels:
For 74HC174: CMOS level
For 74HCT174: TTL level
Six edge-triggered D-type flip-flops
Asynchronous master reset
Complies with JEDEC standards
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V.
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C.
1+:¥1.2602
500+:¥1.1456
1000+:¥1.0911
3000+:¥1.0391
- 42,500
- 2347+
- 数据手册
限量供应
PMH950UPEH20 V, P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥0.2949
500+:¥0.2681
1000+:¥0.2554
3000+:¥0.2432
10000+:¥0.1124
39999+:¥0.1124
- 39,999
- 2347+
- 数据手册
限量供应
74LVC2G86GT,115Dual 2-input EXCLUSIVE-OR gateWide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low-power dissipation
±24 mA output drive (VCC = 3.0 V)
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
- IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
1+:¥0.6244
500+:¥0.5677
1000+:¥0.5406
3000+:¥0.5149
5000+:¥0.4555
15000+:¥0.4555
- 15,000
- 2352+
- 数据手册
限量供应
74HC4094PW,1188-stage shift-and-store bus registerComplies with JEDEC standard JESD7A
Input levels:
For 74HC4094: CMOS level
For 74HCT4094: TTL level
Low-power dissipation
ESD protection:
HBM JESD22-A114F exceeds 2 kV
MM JESD22-A115-A exceeds 200 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
1+:¥0.9531
500+:¥0.8665
1000+:¥0.8252
2500+:¥0.4667
3000+:¥0.7859
12500+:¥0.4667
- 12,500
- 2342+
- 数据手册
限量供应
PMPB07R3ENAX30 V, N-channel Trench MOSFETLogic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
1+:¥1.2739
500+:¥1.1581
1000+:¥1.1029
3000+:¥0.6407
- 12,000
- 2351+
- 数据手册
限量供应
NX1029X,11560 / 50 V, 330 / 170 mA N/P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
1+:¥0.4845
500+:¥0.4404
1000+:¥0.4195
3000+:¥0.3995
4000+:¥0.2425
- 12,000
- 2350+
- 数据手册
限量供应
BSH201,215P-channel vertical D-MOS logic level FETSaves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Suitable for low gate drive sources
1+:¥1.0722
500+:¥0.9747
1000+:¥0.9283
3000+:¥0.4088
- 12,000
- 2346+
- 数据手册
限量供应
PXN4R7-30QLJ30QL - 30 V, N-channel Trench MOSFETLogic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥1.7370
500+:¥1.5791
1000+:¥1.5039
3000+:¥0.9487
- 11,999
- 2352+
- 数据手册
限量供应
PMZB950UPEYL20 V, P-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
1+:¥0.4226
500+:¥0.3842
1000+:¥0.3659
3000+:¥0.3485
10000+:¥0.1611
- 10,000
- 2342+
- 数据手册
限量供应
PMZB670UPE,31520 V, single P-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2349+
- 数据手册
限量供应
PMZ390UNEYL30 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm
1+:¥0.4541
500+:¥0.4128
1000+:¥0.3931
3000+:¥0.3744
10000+:¥0.1733
- 10,000
- 2348+
- 数据手册
限量供应
PMZ370UNEYL30 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2352+
- 数据手册
限量供应
PMZ130UNEYL20 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small package: 1.0 × 0.6 × 0.48 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2351+
- 数据手册
限量供应
PMH850UPEH30 V, P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥0.3354
500+:¥0.3050
1000+:¥0.2904
3000+:¥0.2766
10000+:¥0.1279
- 10,000
- 2342+
- 数据手册
限量供应
PMH600UNEH20 V, N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
1+:¥0.2433
500+:¥0.2212
1000+:¥0.2106
3000+:¥0.2006
10000+:¥0.0929
- 10,000
- 2351+
- 数据手册
限量供应
NX5008NBKMYL50 V, N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small and ultra thin SMD plastic package
1+:¥0.2513
500+:¥0.2284
1000+:¥0.2176
3000+:¥0.2072
10000+:¥0.0959
- 10,000
- 2342+
- 数据手册
限量供应