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74HC4051PW,1188-channel analog multiplexer/demultiplexerWide analog input voltage range from -5 V to +5 V
CMOS low power dissipation
High noise immunity
Complies with JEDEC standards
- JESD8C (2.7 V to 3.6 V)
- JESD7A (2.0 V to 6.0 V)
- Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Low ON resistance:
80 Ω (typical) at VCC - VEE = 4.5 V
70 Ω (typical) at VCC - VEE = 6.0 V
60 Ω (typical) at VCC - VEE = 9.0 V
Logic level translation: to enable 5 V logic to communicate with ±5 V analog signals
Typical ‘break before make’ built-in
ESD protection:
HBM: ANSI/ESDA/Jedec JS-001 Class 2 exceeds 2000 V
CDM: ANSI/ESDA/Jedec JS-002 Class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
1+:¥0.7756
500+:¥0.7050
1000+:¥0.6715
3000+:¥0.6395
- 330,484
- 数据手册
限量供应
BUK9Y8R7-60E,11560E - N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
1+:¥3.3745
500+:¥3.0677
1000+:¥2.9216
3000+:¥2.7825
- 64,500
- 数据手册
限量供应
BSS84AKM,31550 V, 230 mA P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
1+:¥0.3344
500+:¥0.3040
1000+:¥0.2895
3000+:¥0.2757
10000+:¥0.1272
- 52,810
- 数据手册
限量供应
BUK7Y3R5-40E,11540E - N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th ) rating of greater than 1 V at 175 °C
1+:¥2.9285
500+:¥2.6623
1000+:¥2.5355
3000+:¥2.1040
- 44,995
- 数据手册
限量供应
PMH950UPEH20 V, P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥0.2949
500+:¥0.2681
1000+:¥0.2554
3000+:¥0.2432
10000+:¥0.1124
- 39,999
- 数据手册
限量供应
PMZB200UNEYL30 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm
1+:¥0.5523
500+:¥0.5021
1000+:¥0.4782
3000+:¥0.4554
10000+:¥0.2105
- 30,000
- 数据手册
限量供应
PMGD175XNEX30 V, Dual N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥0.6982
500+:¥0.6347
1000+:¥0.6045
3000+:¥0.5757
17950+:¥0.2662
- 17,950
- 数据手册
限量供应
74LVC2G86GT,115Dual 2-input EXCLUSIVE-OR gateWide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low-power dissipation
±24 mA output drive (VCC = 3.0 V)
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
- IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
1+:¥0.6244
500+:¥0.5677
1000+:¥0.5406
3000+:¥0.5149
5000+:¥0.4555
- 15,000
- 数据手册
限量供应
74HC4094PW,1188-stage shift-and-store bus registerComplies with JEDEC standard JESD7A
Input levels:
For 74HC4094: CMOS level
For 74HCT4094: TTL level
Low-power dissipation
ESD protection:
HBM JESD22-A114F exceeds 2 kV
MM JESD22-A115-A exceeds 200 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
1+:¥0.9531
500+:¥0.8665
1000+:¥0.8252
2500+:¥0.4667
3000+:¥0.7859
- 12,500
- 数据手册
限量供应
PMPB07R3ENAX30 V, N-channel Trench MOSFETLogic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
1+:¥1.2739
500+:¥1.1581
1000+:¥1.1029
3000+:¥0.6410
- 12,000
- 数据手册
限量供应
NX1029X,11560 / 50 V, 330 / 170 mA N/P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
1+:¥0.4845
500+:¥0.4404
1000+:¥0.4195
3000+:¥0.2420
- 12,000
- 数据手册
限量供应
BSH201,215P-channel vertical D-MOS logic level FETSaves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Suitable for low gate drive sources
1+:¥1.0722
500+:¥0.9747
1000+:¥0.9283
3000+:¥0.4090
- 12,000
- 数据手册
限量供应
2N7002PS,115channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1+:¥0.4317
500+:¥0.3925
1000+:¥0.3738
3000+:¥0.1650
- 12,000
- 数据手册
限量供应
PXN4R7-30QLJ30QL - 30 V, N-channel Trench MOSFETLogic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥1.7370
500+:¥1.5791
1000+:¥1.5039
3000+:¥0.9490
- 11,999
- 数据手册
限量供应
PMZB950UPEYL20 V, P-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
1+:¥0.4226
500+:¥0.3842
1000+:¥0.3659
3000+:¥0.3485
10000+:¥0.1611
- 10,000
- 数据手册
限量供应
PMZB670UPE,31520 V, single P-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 数据手册
限量供应
PMZB600UNEYL20 V, N-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
1+:¥0.2806
500+:¥0.2551
1000+:¥0.2430
3000+:¥0.2314
10000+:¥0.1069
- 10,000
- 数据手册
限量供应
PMZB150UNEYL20 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm
1+:¥0.4935
500+:¥0.4486
1000+:¥0.4272
3000+:¥0.4069
10000+:¥0.1880
- 10,000
- 数据手册
限量供应
PMZ950UPEYL20 V, P-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
1+:¥0.3780
500+:¥0.3436
1000+:¥0.3273
3000+:¥0.3117
10000+:¥0.1438
- 10,000
- 数据手册
限量供应