MOSFETs

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共 693件相关商品

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60 V, N-channel Trench MOSFET

Logic-level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM

1+:¥0.3162

500+:¥0.2874

1000+:¥0.2737

201000+:¥0.0784

252,000

12 V, P-channel Trench MOSFET

Low threshold voltage
Ultra small package: 0.78 × 0.78 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM

1+:¥0.7095

500+:¥0.6450

1000+:¥0.6143

3000+:¥0.5850

180,000

channel Trench MOSFET

Suitable for logic level gate drive sources
Very fast switching
Surface-mounted package
Trench MOSFET technology

1+:¥0.2138

500+:¥0.1944

1000+:¥0.1851

3000+:¥0.1763

54,000

限量供应

20 V, P-channel Trench MOSFET

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm

1+:¥0.2949

500+:¥0.2681

1000+:¥0.2554

3000+:¥0.2432

10000+:¥0.1124

39,999

限量供应

30 V, N-channel Trench MOSFET

Very fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm

1+:¥0.5523

500+:¥0.5021

1000+:¥0.4782

3000+:¥0.4554

10000+:¥0.2105

30,000

限量供应

100 V, P-channel Trench MOSFET

Extended temperature range T_j = 175 °C
Trench MOSFET technology
Very fast switching

1+:¥0.9233

500+:¥0.8393

1000+:¥0.7994

3000+:¥0.7613

17,980

限量供应

30 V, Dual N-channel Trench MOSFET

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM

1+:¥0.6982

500+:¥0.6347

1000+:¥0.6045

3000+:¥0.5757

17,950

限量供应

60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)

1+:¥0.4845

500+:¥0.4404

1000+:¥0.4195

3000+:¥0.3995

4000+:¥0.2425

16,000

限量供应

30 V, N-channel Trench MOSFET

Logic-level compatible
Ultra low Q_G, Q_GD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

1+:¥1.2739

500+:¥1.1581

1000+:¥1.1029

3000+:¥1.0504

12,000

限量供应

P-channel vertical D-MOS logic level FET

Saves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Suitable for low gate drive sources

1+:¥1.0722

500+:¥0.9747

1000+:¥0.9283

3000+:¥0.8841

12,000

限量供应

30QL - 30 V, N-channel Trench MOSFET

Logic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)

1+:¥1.7370

500+:¥1.5791

1000+:¥1.5039

3000+:¥1.4323

11,999

限量供应

20 V, P-channel Trench MOSFET

Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance R_DSon = 1.02 Ω

1+:¥0.4226

500+:¥0.3842

1000+:¥0.3659

3000+:¥0.3485

10000+:¥0.1611

10,000

限量供应

20 V, P-channel Trench MOSFET

Low leakage current
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance R_DSon = 1.02 Ω

1+:¥0.4346

500+:¥0.3951

1000+:¥0.3763

3000+:¥0.3584

10000+:¥0.1659

10,000

限量供应

20 V, single P-channel Trench MOSFET

Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37 mm

1+:¥0.4641

500+:¥0.4219

1000+:¥0.4018

3000+:¥0.3827

10000+:¥0.1770

10,000

限量供应

20 V, N-channel Trench MOSFET

Trench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance R_DSon = 470 mΩ

1+:¥0.2806

500+:¥0.2551

1000+:¥0.2430

3000+:¥0.2314

10000+:¥0.1069

10,000

限量供应

20 V, N-channel Trench MOSFET

Low leakage current
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance R_DSon = 470 mΩ

1+:¥0.2908

500+:¥0.2644

1000+:¥0.2518

3000+:¥0.2398

10000+:¥0.1106

0

限量供应

20 V, N-channel Trench MOSFET

Very fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm

1+:¥0.4935

500+:¥0.4486

1000+:¥0.4272

3000+:¥0.4069

10000+:¥0.1880

10,000

限量供应

20 V, P-channel Trench MOSFET

Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance R_DSon = 1.02 Ω

1+:¥0.3780

500+:¥0.3436

1000+:¥0.3273

3000+:¥0.3117

10000+:¥0.1438

10,000

限量供应

30 V, N-channel Trench MOSFET

Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm

1+:¥0.4541

500+:¥0.4128

1000+:¥0.3931

3000+:¥0.3744

10000+:¥0.1733

10,000

限量供应

30 V, N-channel Trench MOSFET

Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm

1+:¥0.4641

500+:¥0.4219

1000+:¥0.4018

3000+:¥0.3827

10000+:¥0.1770

10,000

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