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- 价格
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- 数据手册
- 操作
PXP700-150QSJ150QS - 150 V, P-channel Trench MOSFET1+:¥1.5874
500+:¥1.4431
1000+:¥1.3744
3000+:¥1.3089
- 99,975,999
- 数据手册
PXP013-30QLJ30QL - 30 V, P-channel Trench MOSFETLogic level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥1.3599
500+:¥1.2363
1000+:¥1.1774
3000+:¥1.1213
- 99,993,999
- 数据手册
PXN040-100QSJ100QS - N-channel 100 V, 40 mOhm, standard level Trench MOSFET in MLPAK33Standard level compatibility
Trench MOSFET technology
Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)
1+:¥0.6633
500+:¥0.6030
1000+:¥0.5743
3000+:¥0.5469
- 0
- 数据手册
PSMN4R4-80BS,11880BS - N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAKHigh efficiency due to low switching and conduction losses
Robust construction for demanding applications
Standard level gate
1+:¥10.4948
500+:¥9.5407
1000+:¥9.0864
3000+:¥8.6537
- 0
- 数据手册
PMZ550UNEYL30 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm
1+:¥0.2522
500+:¥0.2293
1000+:¥0.2184
3000+:¥0.2080
- 99,829,999
- 数据手册
PMV50UPE,21520 V, single P-channel Trench MOSFET3 kV ESD protected
Trench MOSFET technology
Low threshold voltage
1+:¥0.5807
500+:¥0.5279
1000+:¥0.5027
3000+:¥0.4788
- 97,497,999
- 数据手册
PMV30UN2VL20 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1000 mW
1+:¥0.4079
500+:¥0.3708
1000+:¥0.3531
3000+:¥0.3363
- 99,999,999
- 数据手册
PMPB23XNE,11520 V, single N-channel Trench MOSFET1 kV ESD protection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated, 100% solderable side pads for optical solder inspection
1+:¥0.7739
500+:¥0.7035
1000+:¥0.6700
3000+:¥0.6381
- 99,999,999
- 数据手册
PMPB20EN,11530 V, N-channel Trench MOSFETTrench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
1+:¥0.6118
500+:¥0.5562
1000+:¥0.5297
3000+:¥0.5045
- 99,951,999
- 数据手册
PMPB14XPX12 V, P-channel Trench MOSFETLow threshold voltage
Trench MOSFET technology
Side wettable flanks for optical solder inspection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
1+:¥0.8876
500+:¥0.8069
1000+:¥0.7685
3000+:¥0.7319
- 99,864,999
- 数据手册
PMPB13XNEZ30 V, single N-channel Trench MOSFET1 kV ESD protection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated, 100% solderable side pads for optical solder inspection
1+:¥0.8586
500+:¥0.7806
1000+:¥0.7434
3000+:¥0.7080
- 96,060,999
- 数据手册
PMPB11EN,11530 V, N-channel Trench MOSFETTrench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
1+:¥0.9928
500+:¥0.9026
1000+:¥0.8596
3000+:¥0.8186
- 99,759,999
- 数据手册
PMCXB900UEZ20 V, complementary N/P-channel Trench MOSFETTrench MOSFET technology
Very low threshold voltage for portable applications: VGS(th) = 0.7 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
1+:¥0.6654
500+:¥0.6050
1000+:¥0.5761
3000+:¥0.5487
5000+:¥0.5487
- 98,974,999
- 数据手册
NX3008NBKMB,31530 V, single N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile with 0.37 mm height
1+:¥0.2973
500+:¥0.2703
1000+:¥0.2574
3000+:¥0.2451
- 99,999,999
- 数据手册
