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PMCM4401VPEZ12 V, P-channel Trench MOSFETLow threshold voltage
Ultra small package: 0.78 × 0.78 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥0.7095
500+:¥0.6450
1000+:¥0.6143
3000+:¥0.5850
- 180,000
- 2445+
- 数据手册
PMH950UPEH20 V, P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥0.2949
500+:¥0.2681
1000+:¥0.2554
3000+:¥0.2432
10000+:¥0.1124
39999+:¥0.1124
- 39,999
- 2347+
- 数据手册
限量供应
2N7002NXAKRchannel Trench MOSFETVery fast switching
Trench MOSFET technology
ESD protected
1+:¥0.1540
500+:¥0.1400
1000+:¥0.1334
3000+:¥0.1270
- 18,000
- 2504+
- 数据手册
PMPB07R3ENAX30 V, N-channel Trench MOSFETLogic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
1+:¥1.2739
500+:¥1.1581
1000+:¥1.1029
3000+:¥1.0504
- 12,000
- 2351+
- 数据手册
限量供应
BSH201,215P-channel vertical D-MOS logic level FETSaves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Suitable for low gate drive sources
1+:¥1.0722
500+:¥0.9747
1000+:¥0.9283
3000+:¥0.8841
- 12,000
- 2346+
- 数据手册
限量供应
PXN4R7-30QLJ30QL - 30 V, N-channel Trench MOSFETLogic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥1.7370
500+:¥1.5791
1000+:¥1.5039
3000+:¥1.4323
- 11,999
- 2352+
- 数据手册
限量供应
PMZB670UPE,31520 V, single P-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2349+
- 数据手册
限量供应
PMZ390UNEYL30 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm
1+:¥0.4541
500+:¥0.4128
1000+:¥0.3931
3000+:¥0.3744
10000+:¥0.1733
- 10,000
- 2348+
- 数据手册
限量供应
PMZ370UNEYL30 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2352+
- 数据手册
限量供应
PMZ130UNEYL20 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small package: 1.0 × 0.6 × 0.48 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2351+
- 数据手册
限量供应
PMH600UNEH20 V, N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
1+:¥0.2433
500+:¥0.2212
1000+:¥0.2106
3000+:¥0.2006
10000+:¥0.0929
- 10,000
- 2351+
- 数据手册
限量供应
PMH1200UPEH30 V, P-channel Trench MOSFET- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
1+:¥0.3040
500+:¥0.2764
1000+:¥0.2632
3000+:¥0.2507
- 10,000
- 2350+
- 数据手册
BSS84AKMB,31550 V, single P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
Ultra thin package profile with 0.37 mm height
1+:¥0.3576
500+:¥0.3251
1000+:¥0.3096
3000+:¥0.2949
- 10,000
- 2350+
- 数据手册
限量供应
PMZ350UPEYL20 V, P-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 1.8 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
1+:¥0.4651
500+:¥0.4228
1000+:¥0.4027
3000+:¥0.3835
- 9,960
- 2344+
- 数据手册
PMZ600UNEYL20 V, N-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
1+:¥0.2605
500+:¥0.2368
1000+:¥0.2255
3000+:¥0.2148
9930+:¥0.0995
- 9,930
- 2352+
- 数据手册
限量供应
PMZB150UNEYL20 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm
1+:¥0.4935
500+:¥0.4486
1000+:¥0.4272
3000+:¥0.4069
9900+:¥0.1880
- 9,900
- 2350+
- 数据手册
限量供应
PMZB550UNEYL30 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Ultra thin package profile of 0.37 mm height
1+:¥0.4257
500+:¥0.3870
1000+:¥0.3686
3000+:¥0.3510
9525+:¥0.1622
- 9,525
- 2349+
- 数据手册
限量供应
PSMNR60-25YLHX25YLH - N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology100% avalanche tested at I(AS) = 190 A
Optimized for low RDSon
Low leakage < 1 μA at 25 °C
Low spiking and ringing for low EMI designs
Optimized for 4.5 V gate drive
Copper-clip for low parasitic inductance and resistance
High reliability LFPAK package, qualified to 175 °C
Wave solderable; exposed leads for optimal solder coverage and visual solder inspection
1+:¥6.0857
500+:¥5.5325
1000+:¥5.2690
1500+:¥4.2961
3000+:¥5.0181
- 9,000
- 2352+
- 数据手册
限量供应
PSMN7R0-60YS,11560YS - N-channel LFPAK 60 V, 6.4 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥3.7938
500+:¥3.4490
1000+:¥3.2847
1500+:¥2.8805
3000+:¥3.1283
- 9,000
- 2351+
- 数据手册
限量供应