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PMCM4401VPEZ12 V, P-channel Trench MOSFETLow threshold voltage
Ultra small package: 0.78 × 0.78 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥0.7095
500+:¥0.6450
1000+:¥0.6143
3000+:¥0.5850
- 180,000
- 2445+
- 数据手册
PMDXB600UNEZ20 V, dual N-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
1+:¥0.3192
500+:¥0.2902
1000+:¥0.2764
3000+:¥0.2632
- 55,000
- 2518+
- 数据手册
PMH950UPEH20 V, P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥0.2949
500+:¥0.2681
1000+:¥0.2554
3000+:¥0.2432
10000+:¥0.1124
39999+:¥0.1124
- 39,999
- 2347+
- 数据手册
限量供应
PMZ350UPEYL20 V, P-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 1.8 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
1+:¥0.4651
500+:¥0.4228
1000+:¥0.4027
3000+:¥0.3835
- 19,960
- 2523+
- 数据手册
PMPB07R3ENAX30 V, N-channel Trench MOSFETLogic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
1+:¥1.2739
500+:¥1.1581
1000+:¥1.1029
3000+:¥0.6407
- 12,000
- 2351+
- 数据手册
限量供应
BSH201,215P-channel vertical D-MOS logic level FETSaves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Suitable for low gate drive sources
1+:¥1.0722
500+:¥0.9747
1000+:¥0.9283
3000+:¥0.4088
- 12,000
- 2346+
- 数据手册
限量供应
PXN4R7-30QLJ30QL - 30 V, N-channel Trench MOSFETLogic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥1.7370
500+:¥1.5791
1000+:¥1.5039
3000+:¥0.9487
- 11,999
- 2352+
- 数据手册
限量供应
PMZB950UPEYL20 V, P-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
1+:¥0.4226
500+:¥0.3842
1000+:¥0.3659
3000+:¥0.3485
10000+:¥0.1611
- 10,000
- 2342+
- 数据手册
限量供应
PMZB670UPE,31520 V, single P-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2349+
- 数据手册
限量供应
PMZ390UNEYL30 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm
1+:¥0.4541
500+:¥0.4128
1000+:¥0.3931
3000+:¥0.3744
10000+:¥0.1733
- 10,000
- 2348+
- 数据手册
限量供应
PMZ370UNEYL30 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2352+
- 数据手册
限量供应
PMZ130UNEYL20 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small package: 1.0 × 0.6 × 0.48 mm
1+:¥0.4641
500+:¥0.4219
1000+:¥0.4018
3000+:¥0.3827
10000+:¥0.1770
- 10,000
- 2351+
- 数据手册
限量供应
PMH850UPEH30 V, P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥0.3354
500+:¥0.3050
1000+:¥0.2904
3000+:¥0.2766
10000+:¥0.1279
- 10,000
- 2342+
- 数据手册
限量供应
PMH600UNEH20 V, N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
1+:¥0.2433
500+:¥0.2212
1000+:¥0.2106
3000+:¥0.2006
10000+:¥0.0929
- 10,000
- 2351+
- 数据手册
限量供应
PMH1200UPEH30 V, P-channel Trench MOSFET- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
1+:¥0.3040
500+:¥0.2764
1000+:¥0.2632
3000+:¥0.2507
- 10,000
- 2350+
- 数据手册
NX5008NBKMYL50 V, N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small and ultra thin SMD plastic package
1+:¥0.2513
500+:¥0.2284
1000+:¥0.2176
3000+:¥0.2072
10000+:¥0.0959
- 10,000
- 2342+
- 数据手册
限量供应
NX138BKMYL60 V, N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥0.2036
500+:¥0.1851
1000+:¥0.1763
3000+:¥0.1679
10000+:¥0.0774
- 10,000
- 2339+
- 数据手册
限量供应
NX138BKHH60 V, N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
1+:¥0.2036
500+:¥0.1851
1000+:¥0.1763
3000+:¥0.1679
10000+:¥0.0774
- 10,000
- 2337+
- 数据手册
限量供应
BSS84AKMB,31550 V, single P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
Ultra thin package profile with 0.37 mm height
1+:¥0.3576
500+:¥0.3251
1000+:¥0.3096
3000+:¥0.2949
10000+:¥0.1364
- 10,000
- 2350+
- 数据手册
限量供应
PMZ600UNEYL20 V, N-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
1+:¥0.2605
500+:¥0.2368
1000+:¥0.2255
3000+:¥0.2148
9930+:¥0.0995
- 9,930
- 2352+
- 数据手册
限量供应