Bidirectional ESD protection of one line

Very high surge robustness; I_PP = 40 A for 8/20 µs pulse (average measured)

Very low clamping voltage: V_CL= 10.5 V typ. for 34 A, 8/20 µs pulse

ESD protection up to 30 kV

Very low dynamical resistance R_dyn = 0.07 Ω (TLP)

AEC-Q101 qualified

Bidirectional ESD protection of one line

Very high surge robustness; I_PPM = 71 A (measured) for 8/20 μs pulse

Very low clamping voltage: V_CL = 12 V typ. for 60 A at 8/20μs pulse

ESD protection up to 30 kV

Bidirectional ESD protection of one line

Very high surge robustness; I_PP = 38.3 A for 8/20 µs pulse (average measured)

Very low clamping voltage: V_CL= 10.3 V typ. for 34 A, 8/20 µs pulse

ESD protection up to 30 kV

Very low dynamical resistance R_dyn = 0.1 Ω (TLP)

AEC-Q101 qualified

Unidirectional protection of one line

Reverse standoff voltage range: V_RWM = 24 V

Surge current for 8/20 µs pulse: I_PPM = 79 A (rated) / I_PP = 100 A (average measured)

Surge current for 10/1000 µs pulse: I_PPM = 7.7 A (rated) / I_PP = 9.3 A (average measured)

Reverse current: I_RM = 1 nA

Very low package height: 0.65 mm

AEC-Q101 qualified

Unidirectional protection of one line

Reverse standoff voltage: V_RWM = 22 V

Surge current for 8/20 µs pulse: I_PPM = 88.5 A (rated) / I_PP = 105 A (average measured)

Surge current for 10/1000 µs pulse: I_PPM = 8.4 A (rated) / I_PP = 10.3 A (average measured)

Reverse current: I_RM = 1 nA

Very low package height: 0.65 mm

AEC-Q101 qualified

Rated peak pulse current: I_PPM = 41 A (8/20 µs pulse)

Rated peak pulse power: P_PPM = 1800 W (8/20 µs pulse)

Dynamic resistance R_dyn = 0.17 Ω

Reverse current: I_RM = 0.1 nA

Very low package height: 0.29 mm

Unidirectional protection of one line

Reverse standoff voltage: V_RWM = 15 V

Surge robustness: I_PPM = 111 A (8/20 µs) / I_PPM = 12.3 A (10/1000 µs)

Reverse current: I_RM = 1 nA

Very low package height: 0.65 mm

AEC-Q101 qualified

Unidirectional protection of one line

Reverse standoff voltage: V_RWM = 12 V

Surge robustness: I_PPM = 131 A (8/20 µs) / I_PPM = 15.1 A (10/1000 µs)

Reverse current: I_RM = 1 nA

Very low package height: 0.65 mm

AEC-Q101 qualified

Bidirectional ESD protection of one line

Surge robustness I_PPM = 20 A according to IEC 61000-4-5

Extremely low diode capacitance C_d = 0.5 pF

Extremely low clamping to protect sensitive I/Os

Extremely low-inductance protection path to ground

ESD protection up to ± 30 kV according to IEC 61000-4-2

Ultra small SMD package

Bidirectional ESD protection of one line

Extremely low Harmonic Distortion, very reproducible due to monolithic construction

Extremely low diode capacitance, C_d = 0.13 pF at 1 MHz typical

Extremely low clamping voltage to protect sensitive transceivers

Extremely low leakage current: 1 nA at 7.1 V typical

Extremely low inductance protection path to ground

Very high surge robustness: 4.8 A for 8/20 µs pulse

Extremely low insertion loss: -0.28 dB at 10 GHz

Extremely low return loss: -19 dB at 10 GHz

20 Gbps capable

Ultra-small SMD package

ESD protection of one line

Ultra low diode capacitance C_d = 0.95 pF

Ultra low clamping voltage: V_CL = 8 V

Ultra low leakage current: I_RM = 1 nA

ESD protection up to 8 kV

IEC 61000-4-2; level 4 (ESD)

Ultra small SMD plastic package

Solderable tin-plated side pads

ESD protection of one line

ESD protection up to 15 kV

Ultra low diode capacitance C_d = 1.55 pF

IEC 61000-4-2; level 4 (ESD)

Ultra small SMD plastic package

Low clamping voltage: V_CL = 9 V

Solderable side pads

IEC 61000-4-5 (surge); I_PP = 2 A

Package height typ. 0.37 mm

AEC-Q101 qualified

Ultra low leakage current: I_RM = 1 nA

Bidirectional ESD protection of one line

Extremely low capacitance: C_d = 0.49 pF

Low clamping voltage: V_CL = 18 V

Ultra low leakage current: I_RM = 1 nA

ESD protection up to 8 kV

IEC 61000-4-2; level 4 (ESD)

AEC-Q101 qualified

Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

Bidirectional ESD protection of one line

Very low diode capacitance C_d = 3.5 pF

ESD protection up to ±15 kV according to IEC 61000-4-2

Ultra small SMD package

Symmetrical breakdown voltage

Bidirectional ESD protection of one line

Very low diode capacitance: C_d = 11 pF

Max. peak pulse power: P_PPM = 45 W

Low clamping voltage: V_CL = 12.5 V

Ultra low leakage current: I_RM = 1 nA

ESD protection up to 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61000-4-5 (surge); I_PPM = 4.8 A

Unidirectional ESD protection of one line

Ultra low diode capacitance: C_d = 2 pF

Very low leakage current: I_RM = 1 nA

ESD protection up to 9 kV

IEC 61000-4-2; level 4 (ESD)

Unidirectional ESD protection of one line

ESD protection up to 9 kV

IEC 61000-4-2; level 4 (ESD)

Ultra low diode capacitance: C_d = 2 pF

Very low leakage current: I_RM = 1 nA

ESD protection of one line

Super small SMD package

Ultra low leakage current I_RM < 1 nA

ESD protection up to 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61643-321 (surge); I_PPM = 3.5 A

ESD protection of one line

Low diode capacitance C_d = 12 pF

Super small SMD package

Ultra low leakage current I_RM < 1 nA

ESD protection up to 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61643-321 (surge); I_PPM = 1.2 A