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    PESD5V0F1BRSF
    PESD5V0F1BRSFYL
    Extremely low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance Cd = 0.25 pF

    • Minimized capacitance variation over voltage

    • ESD protection up to ±10 kV according to IEC 61000-4-2

    • Ultra small SMD package

    1+:¥0.4202

    500+:¥0.3820

    1000+:¥0.3638

    3000+:¥0.3465

    629,980
    数据手册
    PESD3V3V1BCSF
    PESD3V3V1BCSFYL
    Ultra low clamping bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Ultra small leadless package with a height of 0.3 mm

    • IEC 61000-4-5 (surge); IPPM = 8.3 A (average measured)

    • Very low clamping voltage: VCL = 8.9 V max for 7.1 A, 8/20 μs pulse

    • Ultra low leakage current: IRM < 1 nA

    • ESD protection up to 27 kV

    1+:¥0.1347

    500+:¥0.1225

    1000+:¥0.1167

    3000+:¥0.1111

    549,000
    数据手册
    PESD5V0C1BSF
    PESD5V0C1BSFYL
    Ultra low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance Cd = 0.2 pF

    • ESD protection up to ±20 kV according to IEC 61000-4-2

    • Ultra small SMD package

    1+:¥0.2695

    500+:¥0.2450

    1000+:¥0.2333

    3000+:¥0.2222

    396,000
    数据手册
    PESD5V0L1UA
    PESD5V0L1UA,115
    Low capacitance unidirectional ESD protection diode
    • Unidirectional ESD protection of one line

    • Low diode capacitance: Cd = 25 pF

    • Low clamping voltage: VCL = 12 V

    • Very low leakage current: IRM = 10 nA

    • ESD protection up to 26 kV

    • IEC 61000-4-2; level 4 (ESD)

    1+:¥0.3378

    500+:¥0.3070

    1000+:¥0.2924

    3000+:¥0.2785

    290,990
    数据手册
    PESD5V0V1BB
    PESD5V0V1BB,115
    Very low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Very low diode capacitance: Cd = 11 pF

    • Max. peak pulse power: PPPM = 45 W

    • Low clamping voltage: VCL = 12.5 V

    • Ultra low leakage current: IRM < 1 nA

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPPM = 4.8 A

    1+:¥0.4337

    500+:¥0.3943

    1000+:¥0.3755

    3000+:¥0.3576

    219,000
    数据手册
    PUSB3F96
    PUSB3F96X
    ESD protection for ultra high-speed interfaces
    • System ESD protection for USB 2.0 and SuperSpeed USB 3.0, HDMI 2.0, DisplayPort, eSATA and LVDS

    • All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±10 kV exceeding IEC 61000-4-2, level 4

    • Matched 0.5 mm trace spacing

    • Signal lines with ≤ 0.05 pF matching capacitance between signal pairs

    • Line capacitance of only 0.5 pF for each channel

    • Design-friendly ‘pass-through’ signal routing

    1+:¥0.3929

    500+:¥0.3572

    1000+:¥0.3402

    3000+:¥0.3240

    40,000
    数据手册
    vp_PESD5V0L1BSF
    PESD5V0L1BSF,315
    Ultra low profile bidirectional low capacitance ESD protection diode
    • Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

    • Bidirectional ESD protection of one line

    • Low diode capacitance Cd = 12 pF

    • ESD protection up to ±30 kV according to IEC 61000-4-2

    • Ultra small SMD package

    • Symmetrical breakdown voltage

    1+:¥0.1235

    500+:¥0.1122

    1000+:¥0.1069

    3000+:¥0.1018

    27,000
    数据手册
    PESD5V0HS
    PESD5V0HS-SFYL
    SF - Ultra low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance Cd = 0.25 pF

    • ESD protection up to ±15 kV according to IEC 61000-4-2

    • Ultra small SMD package

    1+:¥0.2214

    500+:¥0.2013

    1000+:¥0.1917

    3000+:¥0.1826

    27,000
    数据手册
    PESD5V0V1BL
    PESD5V0V1BL,315
    Very low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Very low diode capacitance: Cd = 11 pF

    • Max. peak pulse power: PPPM = 45 W

    • Low clamping voltage: VCL = 12.5 V

    • Ultra low leakage current: IRM = 1 nA

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPPM = 4.8 A

    1+:¥0.1163

    500+:¥0.1057

    1000+:¥0.1007

    3000+:¥0.0959

    19,300
    数据手册
    PESD5V0C2BDF
    PESD5V0C2BDFZ
    Extremely low clamping low capacitance ESD protection
    • Bidirectional ESD protection of two lines

    • Very low diode capacitance Cd = 0.21 pF

    • Extremely low clamping to protect sensitive I/Os

    • Extremely low-inductance protection path to ground

    • Extremely symmetrical layout

    • ESD protection up to ±20 kV according to IEC 61000-4-2; surge robustness 8.5 A 8/20 μs

    • Ultra small SMD package

    • Placed on one differential line pair, almost no extra PCB space demand for protection

    1+:¥0.3153

    500+:¥0.2867

    1000+:¥0.2730

    3000+:¥0.2600

    15,000
    数据手册
    PUSB3BB2DF
    PUSB3BB2DFZ
    Extremely low clamping low capacitance ESD protection
    • Bidirectional ESD protection of two lines

    • Very low diode capacitance Cd = 0.26 pF

    • Extremely low clamping to protect sensitive I/Os

    • Extremely low-inductance protection path to ground

    • Extremely symmetrical layout

    • ESD protection up to ±20 kV according to IEC 61000-4-2

    • Ultra small SMD package

    • Placed on one differential line pair, almost no extra PCB space demand for protection

    1+:¥0.3153

    500+:¥0.2867

    1000+:¥0.2730

    3000+:¥0.2600

    14,900
    数据手册
    PTVS7V5Z1USK
    PTVS7V5Z1USKYL
    Transient voltage suppressor in DSN1608-2 for mobile applications
    • Rated peak pulse current: IPPM = 100 A (8/20 µs pulse)

    • Rated peak pulse power: PPPM = 2200 W (8/20 µs pulse)

    • Dynamic resistance Rdyn = 0.08 Ω

    • Reverse current: IRM = 2 nA

    • Very low package height: 0.29 mm

    1+:¥0.4286

    500+:¥0.3896

    1000+:¥0.3711

    3000+:¥0.3534

    10,000
    数据手册
    PTVS5V0Z1USKP
    PTVS5V0Z1USKPYL
    Transient voltage suppressor in DSN1608-2 for mobile applications
    • Average measured peak pulse current: IPPM = 112.5 A (8/20 μs pulse)

    • Rated peak pulse current: IPPM = 100 A (8/20 μs pulse)

    • Rated peak pulse power: PPPM = 260 W (10/1000 µs pulse)

    • Dynamic resistance Rdyn = 0.08 Ω

    • Very low package height: 0.29 mm

    1+:¥0.4286

    500+:¥0.3896

    1000+:¥0.3711

    3000+:¥0.3534

    10,000
    数据手册
    PTVS12VZ1USK
    PTVS12VZ1USKYL
    Transient voltage suppressor in DSN1608-2 for mobile applications
    • Rated peak pulse current: IPPM = 65 A (8/20 µs pulse)

    • Rated peak pulse power: PPPM = 1900 W (8/20 µs pulse)

    • Dynamic resistance Rdyn = 0.11 Ω

    • Reverse current: IRM = 0.1 nA

    • Very low package height: 0.29 mm

    1+:¥0.4286

    500+:¥0.3896

    1000+:¥0.3711

    3000+:¥0.3534

    10,000
    数据手册
    PESD5V0X1BL
    PESD5V0X1BL,315
    Ultra low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • ESD protection up to 9 kV

    • Ultra low diode capacitance: Cd = 0.9 pF

    • Very low leakage current: IRM = 1 nA

    • IEC 61000-4-2; level 4 (ESD)

    1+:¥0.7959

    500+:¥0.7236

    1000+:¥0.6891

    3000+:¥0.6563

    10,000
    数据手册
    PESD5V0X1BCAL
    PESD5V0X1BCAL,315
    Extremely low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Extremely low capacitance: Cd = 0.85 pF

    • Low clamping voltage: VCL = 17 V

    • Ultra low leakage current: IRM = 1 nA

    • ESD protection up to 15 kV

    • IEC 61000-4-2; level 4 (ESD)

    1+:¥0.2469

    500+:¥0.2245

    1000+:¥0.2138

    3000+:¥0.2036

    10,000
    数据手册
    PESD5V0S1BLD
    PESD5V0S1BLD,315
    Bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Ultra small SMD plastic package

    • Solderable side pads

    • Package height typ. 0.37 mm

    • Low clamping voltage: VCL = 14 V

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPP = 12 A

    • Max. peak pulse power: PPPM = 130W

    • Ultra low leakage current: IRM = 5 nA

    1+:¥0.2592

    500+:¥0.2356

    1000+:¥0.2244

    3000+:¥0.2137

    10,000
    数据手册
    PESD5V0L2UMB
    PESD5V0L2UMB,315
    Low capacitance unidirectional double ESD protection array
    • ESD protection of up to two lines

    • Low diode capacitance Cd = 16 pF

    • Low clamping voltage VCL = 10 V

    • Ultra low leakage current IRM = 5 nA

    • ESD protection up to 15 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPPM = 2.5 A

    • AEC-Q101 qualified

    1+:¥0.4317

    500+:¥0.3925

    1000+:¥0.3738

    3000+:¥0.3560

    10,000
    数据手册
    PESD5V0F1BL
    PESD5V0F1BL,315
    Femtofarad bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Femtofarad capacitance: Cd = 400 fF

    • Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV

    • Very low leakage current: IRM < 1 nA

    • ESD protection up to 10 kV

    • IEC 61000-4-2; level 4 (ESD)

    1+:¥0.3367

    500+:¥0.3061

    1000+:¥0.2915

    3000+:¥0.2776

    10,000
    数据手册
    PESD3V3S1UL
    PESD3V3S1UL,315
    Unidirectional ESD protection diode
    • Ultra small SMD plastic package

    • ESD protection of one line

    • Max. peak pulse power: PPPM = 150 W

    • Low clamping voltage: VCL = 20 V

    • Ultra low leakage current: IRM < 700 nA

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5; (surge); IPPM = 15 A

    • AEC-Q101 qualified

    1+:¥0.1795

    500+:¥0.1632

    1000+:¥0.1554

    3000+:¥0.1480

    10,000
    数据手册