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BAS21J-QXQ - Single high-speed switching diodeHigh switching speed: trr ≤ 50 ns
Low capacitance: Cd ≤2 pF
Low leakage current
Reverse voltage: VR ≤ 300 V
Repetitive peak reverse voltage: VRRM ≤ 300 V
Very small and flat lead SMD plastic package
Excellent coplanarity and improved thermal behavior
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.1980
500+:¥0.1800
1000+:¥0.1715
3000+:¥0.1633
- 1,206,000
- 2515+
- 数据手册
BAS521-QXQ - High-voltage switching diodeHigh switching speed: trr ≤ 50 ns
High reverse voltage: VR ≤ 300 V
Repetitive peak forward current: IFRM ≤ 1 A
Ultra small SMD plastic package
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.1908
500+:¥0.1734
1000+:¥0.1652
3000+:¥0.1573
- 402,000
- 2507+
- 数据手册
PESD2IVN24-TRT - ESD protection for In-vehicle networksReverse stand-off voltage: VRWM = 24 V
Low clamping voltage: VCL= 33 V at IPP = 3.5 A
Typ. diode capacitance matching: ∆Cd/Cd = 0.1 %
ESD protection up to 30 kV (IEC 61000-4-2)
ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)
ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V
Ultra low leakage current: IRM < 1 nA
Qualified according to AEC-Q101 / Automotive grade
1+:¥0.3704
500+:¥0.3367
1000+:¥0.3207
3000+:¥0.3054
- 383,650
- 2350+
- 数据手册
PESD5V0F1BL-QYLQ - Femtofarad bidirectional ESD protection diodeBidirectional ESD protection of one line
Femtofarad capacitance: Cd = 400 fF
Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV
Very low leakage current: IRM < 1 nA
ESD protection up to 10 kV
IEC 61000-4-2; level 4 (ESD)
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.3541
500+:¥0.3219
1000+:¥0.3066
3000+:¥0.2920
- 380,000
- 2525+
- 数据手册
BZX585-C15-QXQ series - Voltage regulator diodesNon-repetitive peak reverse power dissipation: ≤ 40 W
Total power dissipation: ≤ 300 mW
Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
Two tolerance series: ± 2 % and ± 5 %
Low differential resistance
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.2081
500+:¥0.1892
1000+:¥0.1802
3000+:¥0.1716
- 210,000
- 2512+
- 数据手册
PHPT60603PYX60 V, 3 A PNP high power bipolar transistorHigh thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
1+:¥1.1989
500+:¥1.0899
1000+:¥1.0380
3000+:¥0.9886
- 182,955
- 2352+
- 数据手册
TL431BQDBZR-QRQ family - Adjustable precision shunt regulatorsProgrammable output voltage up to 36 V
Three different reference voltage tolerances:
Standard grade: 2 %
A-Grade: 1 %
B-Grade: 0.5 %
Typical temperature drift: 9 mV (in a range of 0 °C up to 70 °C)
Low output noise
Typical output impedance: 0.2 Ω
Sink current capability: 1 mA to 100 mA
Qualified according to AEC-Q100 (grade 1) and recommended for use in automotive applications
1+:¥0.6827
500+:¥0.6206
1000+:¥0.5910
3000+:¥0.5629
- 72,000
- 2452+
- 数据手册
PDTC143EU-QXQ - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.1214
500+:¥0.1104
1000+:¥0.1051
3000+:¥0.1001
- 144,000
- 2521+
- 数据手册
PDTC114ET-QRQ - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.0969
500+:¥0.0881
1000+:¥0.0839
3000+:¥0.0799
- 125,900
- 2436+
- 数据手册
PDTC143ZT,21550 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥0.0867
500+:¥0.0788
1000+:¥0.0751
3000+:¥0.0715
- 116,995
- 2351+
- 数据手册
BC807-40H-QRQ series - 45 V, 500 mA PNP general-purpose transistorsThree current gain selections
High-temperature applications up to 175 °C
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.2256
500+:¥0.2051
1000+:¥0.1953
3000+:¥0.1860
- 101,700
- 2521+
- 数据手册
BC807-40-QRQ series - 45 V, 500 mA PNP general-purpose transistorsHigh current
Three current gain selections
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.0929
500+:¥0.0845
1000+:¥0.0804
3000+:¥0.0766
- 99,000
- 2450+
- 数据手册
BUK9Y8R7-60E,11560E - N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
1+:¥3.3745
500+:¥3.0677
1000+:¥2.9216
3000+:¥2.7825
- 88,500
- 2352+
- 数据手册
限量供应
BC848B,21530 V, 100 mA NPN general-purpose transistorsGeneral-purpose transistors
SMD plastic packages
AEC-Q101 qualified
1+:¥0.0633
500+:¥0.0576
1000+:¥0.0548
3000+:¥0.0522
- 84,000
- 2522+
- 数据手册
BSS138BK,21560 V, 360 mA N-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1.5 kV
AEC-Q101 qualified
1+:¥0.2564
500+:¥0.2331
1000+:¥0.2220
3000+:¥0.2114
- 81,000
- 2524+
- 数据手册
PBSS4130PAN,11530 V, 1 A NPN/NPN low VCEsat (BISS) transistor1+:¥1.1673
500+:¥1.0612
1000+:¥1.0106
3000+:¥0.9625
- 72,000
- 2523+
- 数据手册
PESD8V0S1ULD-QYLQ - Unidirectional ESD protection diodeUnidirectional ESD protection of one line
Very high surge robustness; IPP = 16 A for 8/20 s pulse; averaged measured
ESD protection up to 30 kV
Ultra small plastic package 1.0 x 0.6 x 0.37 mm
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.2245
500+:¥0.2041
1000+:¥0.1944
3000+:¥0.1851
- 68,800
- 2349+
- 数据手册
BSS84AKM,31550 V, 230 mA P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
1+:¥0.3344
500+:¥0.3040
1000+:¥0.2895
3000+:¥0.2757
10000+:¥0.1272
56398+:¥0.1272
- 56,398
- 2348+
- 数据手册
限量供应