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共 6242件相关商品

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数据手册
操作

PDTC114ET-QR

Q - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications

1+:¥0.0969

500+:¥0.0881

1000+:¥0.0839

3000+:¥0.0799

302,900

数据手册

BSS138BK,215

60 V, 360 mA N-channel Trench MOSFET

Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1.5 kV
AEC-Q101 qualified

1+:¥0.2564

500+:¥0.2331

1000+:¥0.2220

3000+:¥0.2114

276,000

数据手册

PESD2IVN24-TR

T - ESD protection for In-vehicle networks

Reverse stand-off voltage: V_RWM = 24 V
Low clamping voltage: V_CL= 33 V at I_PP = 3.5 A
Typ. diode capacitance matching: ∆C_d/C_d = 0.1 %
ESD protection up to 30 kV (IEC 61000-4-2)
ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)
ISO 7637-3: Pulse a: V_S = -150 V / Pulse b: V_S = +100 V
Ultra low leakage current: I_RM < 1 nA
Qualified according to AEC-Q101 / Automotive grade

1+:¥0.3704

500+:¥0.3367

1000+:¥0.3207

3000+:¥0.3054

272,650

数据手册

PESD1IVN24-AX

A - ESD protection for In-vehicle networks

Reverse stand-off voltage: V_RWM = 24 V
Low clamping voltage: V_CL= 33 V at I_PP = 3.5 A
ESD protection up to 30 kV (IEC 61000-4-2)
ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)
ISO 7637-3: Pulse a: V_S = -150 V / Pulse b: V_S = +100 V
Ultra low leakage current: I_RM < 1 nA
Qualified according to AEC-Q101 / Automotive grade

1+:¥0.2919

500+:¥0.2654

1000+:¥0.2527

3000+:¥0.2407

245,374

数据手册

PDTC143ZT,215

50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified

1+:¥0.0867

500+:¥0.0788

1000+:¥0.0751

3000+:¥0.0715

221,995

数据手册

BAS21AVD,135

High-voltage switching diodes

High switching speed: t_rr ≤ 50 ns
Reverse voltage: V_R ≤ 200 V
Repetitive peak reverse voltage: V_RRM ≤ 250 V
Small SMD plastic package
Low capacitance: C_d ≤ 5 pF
Repetitive peak forward current: I_FRM ≤ 1 A
AEC-Q101 qualified

1+:¥0.5174

500+:¥0.4703

1000+:¥0.4479

3000+:¥0.4266

150,000

数据手册

BAS321-QX

Q - General purpose diode

Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA
Qualified according to AEC-Q101 and recommended for use in automotive applications

1+:¥0.1235

500+:¥0.1122

1000+:¥0.1069

3000+:¥0.1018

147,000

数据手册

74LVC1G08GW-Q100,1

Q100 - Single 2-input AND gate

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
- Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
±24 mA output drive (V_CC = 3.0 V)
CMOS low power dissipation
Direct interface with TTL levels
Overvoltage tolerant inputs to 5.5 V
I_OFF circuitry provides partial Power-down mode operation
Latch-up performance ≤ 250 mA
Complies with JEDEC standard:
- JESD8-7 (1.65 V to 1.95 V)
- JESD8-5 (2.3 V to 2.7 V)
- JESD8C (2.7 V to 3.6 V)
- JESD36 (4.5 V to 5.5 V)
ESD protection:
- HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
- CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

1+:¥0.2754

500+:¥0.2504

1000+:¥0.2385

3000+:¥0.2271

105,000

数据手册

BAS521-QX

Q - High-voltage switching diode

High switching speed: t_rr ≤ 50 ns
High reverse voltage: V_R ≤ 300 V
Repetitive peak forward current: I_FRM ≤ 1 A
Ultra small SMD plastic package
Qualified according to AEC-Q101 and recommended for use in automotive applications

1+:¥0.1908

500+:¥0.1734

1000+:¥0.1652

3000+:¥0.1573

99,000

数据手册

BAS21GWJ

High-voltage switching diode

High switching speed: t_rr ≤ 50 ns
Low leakage current: I_R ≤ 100 nA
High reverse voltage V_R ≤ 200 V
Low capacitance: C_d ≤ 2 pF
Small SMD plastic package
AEC-Q101 qualified

1+:¥0.1327

500+:¥0.1206

1000+:¥0.1149

3000+:¥0.1094

89,900

数据手册

PUMH18,115

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ

100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified

1+:¥0.1632

500+:¥0.1484

1000+:¥0.1413

3000+:¥0.1346

81,000

数据手册

BAS21J-QX

Q - Single high-speed switching diode

High switching speed: t_rr ≤ 50 ns
Low capacitance: C_d ≤2 pF
Low leakage current
Reverse voltage: V_R ≤ 300 V
Repetitive peak reverse voltage: V_RRM ≤ 300 V
Very small and flat lead SMD plastic package
Excellent coplanarity and improved thermal behavior
Qualified according to AEC-Q101 and recommended for use in automotive applications

1+:¥0.1980

500+:¥0.1800

1000+:¥0.1715

3000+:¥0.1633

69,000

数据手册

PESD1CAN,215

CAN bus ESD protection diode

One small SOT23 package to protect two CAN bus lines
Peak pulse power, max.: P_PP = 200 W at t_p = 8/20 µs
Low clamping voltage: V_CL = 40 V at I_PP = 1 A
Ultra low leakage current, typ.: I_RM <1 nA
Diode capacitance matching, typ.: ΔC_d/C_d = 0.1 %
ESD protection up to 23 kV; IEC 61000-4-2, level 4
IEC 61000-4-5 (surge); I_PP = 3 A at t_p = 8/20 µs
AEC-Q101 qualified

1+:¥0.5164

500+:¥0.4694

1000+:¥0.4471

3000+:¥0.4258

65,990

数据手册

BAS17,215

Low-voltage stabistor

Low-voltage stabilization
Forward voltage range: 580 to 960 mV
Total power dissipation: max. 250 mW.
AEC-Q101 qualified

1+:¥0.5622

500+:¥0.5111

1000+:¥0.4868

3000+:¥0.4636

60,000

数据手册

PMEG6002ELDYL

40 V, 0.2 A low VF Schottky barrier rectifier

Average forward current: I_F(AV) ≤ 0.2 A
Reverse voltage: V_R ≤ 60 V
Low forward voltage V_F ≤ 600 mV
AEC-Q101 qualified
Solderable side pads
Package height typ. 0.37 mm

1+:¥0.3479

500+:¥0.3163

1000+:¥0.3012

3000+:¥0.2869

59,987

数据手册

限量供应

BSS84AKM,315

50 V, 230 mA P-channel Trench MOSFET

Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified

1+:¥0.3344

500+:¥0.3040

1000+:¥0.2895

3000+:¥0.2757

10000+:¥0.1272

59,986

数据手册

新品

PMEG100T10ELXD-QX

Q - 100 V, 1 A Trench Schottky barrier rectifier

Low forward voltage
Low Q_rr and low I_RM
Low leakage current
High power capability due to clip-bonding technology
Power flat lead plastic package with exposed heatsink for optimal thermal connection
Qualified according to AEC-Q101 and recommended for use in automotive applications

1+:¥0.4061

500+:¥0.3692

1000+:¥0.3516

3000+:¥0.3349

54,000

数据手册

PMEG10020ELR-QX

Q - 100 V, 2 A low leakage current Schottky barrier rectifier

Average forward current: I_F(AV) ≤ 2 A
Reverse voltage: V_R ≤ 100 V
Low forward voltage: V_F = 770 mV
High power capability due to clip-bonding technology
Extremely low leakage current I_R = 40 nA
High temperature T_j ≤ 175 °C
Qualified according to AEC-Q101 and recommended for use in automotive applications