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    共 6249件相关商品
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    BAS21J
    BAS21J-QX
    Q - Single high-speed switching diode

    • High switching speed: trr ≤ 50 ns

    • Low capacitance: Cd ≤2 pF

    • Low leakage current

    • Reverse voltage: VR ≤ 300 V

    • Repetitive peak reverse voltage: VRRM ≤ 300 V

    • Very small and flat lead SMD plastic package

    • Excellent coplanarity and improved thermal behavior

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.1980

    500+:¥0.1800

    1000+:¥0.1715

    3000+:¥0.1633

    2,196,000
    2515+
    数据手册
    PDTC143ZT
    PDTC143ZT,215
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.0867

    500+:¥0.0788

    1000+:¥0.0751

    3000+:¥0.0715

    977,995
    2351+
    数据手册
    BAS521
    BAS521-QX
    Q - High-voltage switching diode

    • High switching speed: trr ≤ 50 ns

    • High reverse voltage: VR ≤ 300 V

    • Repetitive peak forward current: IFRM ≤ 1 A

    • Ultra small SMD plastic package

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.1908

    500+:¥0.1734

    1000+:¥0.1652

    3000+:¥0.1573

    705,000
    2507+
    数据手册
    PESD2IVN24
    PESD2IVN24-TR
    T - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • Typ. diode capacitance matching: ∆Cd/Cd = 0.1 %

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    1+:¥0.3704

    500+:¥0.3367

    1000+:¥0.3207

    3000+:¥0.3054

    566,650
    2350+
    数据手册
    PESD5V0F1BL
    PESD5V0F1BL-QYL
    Q - Femtofarad bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Femtofarad capacitance: Cd = 400 fF

    • Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV

    • Very low leakage current: IRM < 1 nA

    • ESD protection up to 10 kV

    • IEC 61000-4-2; level 4 (ESD)

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.3541

    500+:¥0.3219

    1000+:¥0.3066

    3000+:¥0.2920

    380,000
    2525+
    数据手册
    BAS21AVD
    BAS21AVD,135
    High-voltage switching diodes

    • High switching speed: trr ≤ 50 ns

    • Reverse voltage: VR ≤ 200 V

    • Repetitive peak reverse voltage: VRRM ≤ 250 V

    • Small SMD plastic package

    • Low capacitance: Cd ≤ 5 pF

    • Repetitive peak forward current: IFRM ≤ 1 A

    • AEC-Q101 qualified

    1+:¥0.5174

    500+:¥0.4703

    1000+:¥0.4479

    3000+:¥0.4266

    359,850
    2502+
    数据手册
    PHPT60603PY
    PHPT60603PYX
    60 V, 3 A PNP high power bipolar transistor

    • High thermal power dissipation capability

    • Suitable for high temperature applications up to 175 °C

    • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

    • High energy efficiency due to less heat generation

    • AEC-Q101 qualified

    1+:¥1.1989

    500+:¥1.0899

    1000+:¥1.0380

    3000+:¥0.9886

    328,455
    2352+
    数据手册
    PESD1IVN27A
    PESD1IVN27A-QX
    Q - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 27 V

    • Low clamping voltage: VCL = 36 V at IPP = 3 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.3000

    500+:¥0.2728

    1000+:¥0.2598

    3000+:¥0.2474

    274,800
    2346+
    数据手册
    BZX585
    BZX585-C15-QX
    Q series - Voltage regulator diodes

    • Non-repetitive peak reverse power dissipation: ≤ 40 W

    • Total power dissipation: ≤ 300 mW

    • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

    • Two tolerance series: ± 2 % and ± 5 %

    • Low differential resistance

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.2081

    500+:¥0.1892

    1000+:¥0.1802

    3000+:¥0.1716

    270,000
    2512+
    数据手册
    PUMD3
    PUMD3-QX
    Q - 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.1806

    500+:¥0.1642

    1000+:¥0.1563

    3000+:¥0.1489

    107,750
    2505+
    数据手册
    @en
    BC807-40H-QR
    Q series - 45 V, 500 mA PNP general-purpose transistors

    • Three current gain selections

    • High-temperature applications up to 175 °C

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.2256

    500+:¥0.2051

    1000+:¥0.1953

    3000+:¥0.1860

    98,700
    2521+
    数据手册
    BAS21GW
    BAS21GWJ
    High-voltage switching diode

    • High switching speed: trr ≤ 50 ns

    • Low leakage current: IR ≤ 100 nA

    • High reverse voltage VR ≤ 200 V

    • Low capacitance: Cd ≤ 2 pF

    • Small SMD plastic package

    • AEC-Q101 qualified

    1+:¥0.1327

    500+:¥0.1206

    1000+:¥0.1149

    3000+:¥0.1094

    79,900
    2509+
    数据手册
    PESD1IVN24
    PESD1IVN24-AX
    A - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    1+:¥0.2919

    500+:¥0.2654

    1000+:¥0.2527

    3000+:¥0.2407

    77,374
    2352+
    数据手册
    PESD8V0S1ULD
    PESD8V0S1ULD-QYL
    Q - Unidirectional ESD protection diode

    • Unidirectional ESD protection of one line

    • Very high surge robustness; IPP = 16 A for 8/20 s pulse; averaged measured

    • ESD protection up to 30 kV

    • Ultra small plastic package 1.0 x 0.6 x 0.37 mm

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.2245

    500+:¥0.2041

    1000+:¥0.1944

    3000+:¥0.1851

    68,800
    2349+
    数据手册

    限量供应

    BUK9Y8R7
    BUK9Y8R7-60E,115
    60E - N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56

    • Q101 compliant

    • Repetitive avalanche rated

    • Suitable for thermally demanding environments due to 175 °C rating

    • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

    1+:¥3.3745

    500+:¥3.0677

    1000+:¥2.9216

    3000+:¥2.7825

    4500+:¥1.9064

    64,500
    2352+
    数据手册
    BAS17
    BAS17,215
    Low-voltage stabistor

    • Low-voltage stabilization

    • Forward voltage range: 580 to 960 mV

    • Total power dissipation: max. 250 mW.

    • AEC-Q101 qualified

    1+:¥0.5622

    500+:¥0.5111

    1000+:¥0.4868

    3000+:¥0.4636

    60,000
    2450+
    数据手册
    PMEG6002ELD
    PMEG6002ELDYL
    40 V, 0.2 A low VF Schottky barrier rectifier

    • Average forward current: IF(AV) ≤ 0.2 A

    • Reverse voltage: VR ≤ 60 V

    • Low forward voltage VF ≤ 600 mV

    • AEC-Q101 qualified

    • Solderable side pads

    • Package height typ. 0.37 mm

    1+:¥0.3479

    500+:¥0.3163

    1000+:¥0.3012

    3000+:¥0.2869

    59,987
    2341+
    数据手册

    限量供应

    BSS84AKM
    BSS84AKM,315
    50 V, 230 mA P-channel Trench MOSFET

    • Logic-level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ESD protection up to 1 kV

    • AEC-Q101 qualified

    1+:¥0.3344

    500+:¥0.3040

    1000+:¥0.2895

    3000+:¥0.2757

    10000+:¥0.1272

    56398+:¥0.1272

    56,398
    2348+
    数据手册
    PMEG10020ELR
    PMEG10020ELR-QX
    Q - 100 V, 2 A low leakage current Schottky barrier rectifier

    • Average forward current: IF(AV) ≤ 2 A

    • Reverse voltage: VR ≤ 100 V

    • Low forward voltage: VF = 770 mV

    • High power capability due to clip-bonding technology

    • Extremely low leakage current IR = 40 nA

    • High temperature Tj ≤ 175 °C

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.5419

    500+:¥0.4926

    1000+:¥0.4691

    3000+:¥0.4468

    45,000
    2445+
    数据手册
    PMV50EPEA
    PMV50EPEAR
    30 V, P-channel Trench MOSFET

    • Logic level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection > 2 kV HBM

    • AEC-Q101 qualified

    1+:¥0.6902

    500+:¥0.6274

    1000+:¥0.5976

    3000+:¥0.5691

    42,000
    2441+
    数据手册