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    vp_BC817_SER
    BC817-16,215
    45 V, 500 mA NPN general-purpose transistors
    • High current

    • Three current gain selections

    1+:¥0.0776

    500+:¥0.0706

    1000+:¥0.0672

    3000+:¥0.0640

    168,000
    2528+
    数据手册
    PUMB11
    PUMB11,115
    50 V, 100 mA PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    156,000
    2505+
    数据手册
    PMBTA06
    PMBTA06,215
    NPN general purpose transistor
    • High current (max. 500 mA)

    • Low voltage (max. 80 V)

    1+:¥0.1102

    500+:¥0.1002

    1000+:¥0.0954

    3000+:¥0.0909

    150,000
    2506+
    数据手册
    BCP56T Series
    BCP56-16TF
    80 V, 1 A NPN medium power transistors
    • High collector current capability IC and ICM
    • Three current gain selections
    • High power dissipation capability
    • AEC-Q101 qualified

    1+:¥0.3693

    500+:¥0.3357

    1000+:¥0.3197

    3000+:¥0.3045

    112,000
    2502+
    数据手册
    PUMB2
    PUMB2,115
    50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    51,000
    2429+
    数据手册
    PUMD3
    PUMD3,115
    50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    48,000
    2507+
    数据手册
    PDTA144E series
    PDTA144ET,215
    PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.0867

    500+:¥0.0788

    1000+:¥0.0751

    3000+:¥0.0715

    39,000
    2451+
    数据手册
    PMBT4401
    PMBT4401,185
    40 V, 600 mA NPN switching transistor
    • High current (max. 600 mA)

    • Low voltage (max. 40 V)

    • AEC-Q101 qualified

    1+:¥0.0846

    500+:¥0.0770

    1000+:¥0.0733

    3000+:¥0.0698

    30,000
    2352+
    数据手册
    vp_BC856_BC857_BC858
    BC856B,215
    65 V, 100 mA PNP general-purpose transistors
    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    1+:¥0.0633

    500+:¥0.0576

    1000+:¥0.0548

    3000+:¥0.0522

    27,000
    2522+
    数据手册
    vp_BC847BPN
    BC847BPN,115
    45 V, 100 mA NPN/PNP general-purpose transistor
    • Low collector capacitance

    • Low collector-emitter saturation voltage

    • Closely matched current gain

    • Reduces number of components and board space

    • No mutual interference between the transistors

    1+:¥0.1561

    500+:¥0.1419

    1000+:¥0.1351

    3000+:¥0.1287

    6,000
    2425+
    数据手册
    BC847BVN
    BC847BVN,115
    45 V, 100 mA NPN/PNP general purpose transistor
    • 300 mW total power dissipation

    • Very small 1.6 mm x 1.2 mm ultra thin package

    • Replaces two SC-75/SC-89 packaged transistors on same PCB area

    • Reduced required PCB area

    • Reduced pick and place costs

    1+:¥0.4490

    500+:¥0.4081

    1000+:¥0.3887

    3000+:¥0.3702

    16,000
    2352+
    数据手册
    PMP4201V
    PMP4201V,115
    45 V, 100 mA NPN/NPN matched double transistor
    • Current gain matching

    • Base-emitter voltage matching

    • Application-optimized pinout

    1+:¥0.9256

    500+:¥0.8414

    1000+:¥0.8014

    3000+:¥0.7632

    12,000
    2351+
    数据手册
    vp_BC856_BC857_BC858
    BC857A,215
    65 V, 100 mA PNP general-purpose transistors
    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    1+:¥0.0654

    500+:¥0.0594

    1000+:¥0.0566

    3000+:¥0.0539

    12,000
    2340+
    数据手册
    BC847BV
    BC847BV,115
    NPN general purpose double transistor
    • 300 mW total power dissipation

    • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package

    • Excellent coplanarity due to straight leads

    • Low collector capacitance

    • Improved thermal behaviour due to flat leads

    • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors

    • Reduces required board space

    • Reduces pick and place costs

    1+:¥0.4490

    500+:¥0.4081

    1000+:¥0.3887

    3000+:¥0.3702

    12,000
    2347+
    数据手册
    vp_BC847x_SER
    BC847B,215
    45 V, 100 mA NPN general-purpose transistors
    • General-purpose transistors

    • SMD plastic packages

    • Three different gain selections

    1+:¥0.0654

    500+:¥0.0594

    1000+:¥0.0566

    3000+:¥0.0539

    11,870
    2515+
    数据手册
    PMBT2222AMB
    PMBT2222AMBYL
    40 V, 600 mA NPN switching transistor
    • High current (max. 600 mA)

    • Low voltage (max. 40V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    • Power dissipation comparable to SOT23

    1+:¥0.2367

    500+:¥0.2152

    1000+:¥0.2050

    3000+:¥0.1952

    10,000
    2511+
    数据手册
    PDTC115E series
    PDTC115EM,315
    NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
    • Built-in bias resistors

    • Simplified circuit design

    • Reduction of component count

    • Reduced pick and place costs.

    • AEC-Q101 qualified

    1+:¥0.1980

    500+:¥0.1800

    1000+:¥0.1715

    3000+:¥0.1633

    10,000
    2345+
    数据手册
    PDTC114YMB
    PDTC114YMB,315
    NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ
    • 100 mA output current capability

    • Reduces component count

    • Built-in bias resistors

    • Reduces pick and place costs

    • Simplifies circuit design

    • AEC-Q101 qualified

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    1+:¥0.2102

    500+:¥0.1911

    1000+:¥0.1820

    3000+:¥0.1733

    10,000
    2342+
    数据手册
    PDTC114YM
    PDTC114YM,315
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.1980

    500+:¥0.1800

    1000+:¥0.1715

    3000+:¥0.1633

    10,000
    2348+
    数据手册
    PDTC114EM
    PDTC114EM,315
    NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.1980

    500+:¥0.1800

    1000+:¥0.1715

    3000+:¥0.1633

    10,000
    2344+
    数据手册