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    共 900件相关商品
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    vp_BC807_SER
    BC807-40,215
    45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.0856

    500+:¥0.0778

    1000+:¥0.0741

    3000+:¥0.0706

    761,000
    2501+
    数据手册
    vp_BC817_SER
    BC817-16,215
    45 V, 500 mA NPN general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.0776

    500+:¥0.0706

    1000+:¥0.0672

    3000+:¥0.0640

    516,000
    2522+
    数据手册
    vp_BC856_BC857_BC858
    BC856A,215
    65 V, 100 mA PNP general-purpose transistors

    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    1+:¥0.0633

    500+:¥0.0576

    1000+:¥0.0548

    3000+:¥0.0522

    168,000
    2526+
    数据手册
    PUMB11
    PUMB11,115
    50 V, 100 mA PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    156,000
    2505+
    数据手册
    PMBTA06
    PMBTA06,215
    NPN general purpose transistor

    • High current (max. 500 mA)

    • Low voltage (max. 80 V)

    1+:¥0.1102

    500+:¥0.1002

    1000+:¥0.0954

    3000+:¥0.0909

    150,000
    2506+
    数据手册
    PUMD10
    PUMD10,115
    NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    96,000
    数据手册
    PBSS5130PAP
    PBSS5130PAP,115
    30 V, 1 A PNP/PNP low VCEsat transistor

    • Very low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High collector current gain hFE at high IC

    • Reduced Printed-Circuit Board (PCB) requirements

    • High energy efficiency due to less heat generation

    1+:¥1.2469

    500+:¥1.1336

    1000+:¥1.0796

    3000+:¥1.0282

    72,000
    2527+
    数据手册
    PDTD113E_SER
    PDTD113ET,215
    NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm

    • Built-in bias resistors

    • Reduces component count

    • Simplifies circuit design

    • Reduces pick and place costs

    • 500 mA output current capability

    • 10 % resistor ratio tolerance

    • AEC-Q101 qualified

    1+:¥0.1908

    500+:¥0.1734

    1000+:¥0.1652

    3000+:¥0.1573

    63,000
    数据手册
    PUMB2
    PUMB2,115
    50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    51,000
    2429+
    数据手册
    BC856BW
    BC856BW,115
    65 V, 100 mA PNP general-purpose transistor

    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    • AEC-Q101 qualified

    1+:¥0.0888

    500+:¥0.0807

    1000+:¥0.0769

    3000+:¥0.0732

    45,000
    2446+
    数据手册
    PDTA144E series
    PDTA144ET,215
    PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.0867

    500+:¥0.0788

    1000+:¥0.0751

    3000+:¥0.0715

    39,000
    2451+
    数据手册
    vp_BC847xW_SER
    BC847BW,115
    45 V, 100 mA NPN general-purpose transistors

    • General-purpose transistors

    • SMD plastic packages

    • Three different gain selections

    1+:¥0.0888

    500+:¥0.0807

    1000+:¥0.0769

    3000+:¥0.0732

    39,000
    2518+
    数据手册
    PDTC114YU
    PDTC114YU,115
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    1+:¥0.1001

    500+:¥0.0910

    1000+:¥0.0866

    3000+:¥0.0825

    33,000
    2514+
    数据手册
    vp_BC847BS
    BC847BS,115
    45 V, 100 mA NPN/NPN general-purpose transistor

    • Low collector capacitance

    • Low collector-emitter saturation voltage

    • Closely matched current gain

    • Reduces number of components and board space

    • No mutual interference between the transistors

    1+:¥0.1561

    500+:¥0.1419

    1000+:¥0.1351

    3000+:¥0.1287

    33,000
    2515+
    数据手册
    PMBT4401
    PMBT4401,185
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40 V)

    • AEC-Q101 qualified

    1+:¥0.0846

    500+:¥0.0770

    1000+:¥0.0733

    3000+:¥0.0698

    30,000
    2352+
    数据手册
    PBSS4160T
    PBSS4160T,215
    60 V, 1 A NPN low VCEsat (BISS) transistor

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High efficiency, reduces heat generation

    • Reduces printed-circuit board area required

    1+:¥0.2867

    500+:¥0.2606

    1000+:¥0.2482

    3000+:¥0.2364

    30,000
    2526+
    数据手册
    vp_BC817_SER
    BC817-25,215
    45 V, 500 mA NPN general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.0776

    500+:¥0.0706

    1000+:¥0.0672

    3000+:¥0.0640

    21,000
    2533+
    数据手册
    vp_BC817_SER
    BC817,215
    45 V, 500 mA NPN general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.0776

    500+:¥0.0706

    1000+:¥0.0672

    3000+:¥0.0640

    21,000
    2509+
    数据手册
    PUMD3
    PUMD3,115
    50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    18,000
    2507+
    数据手册
    vp_BC857BS
    BC857BS,115
    PNP general purpose double transistor

    • Low collector capacitance

    • Low collector-emitter saturation voltage

    • Closely matched current gain

    • Reduces number of components and boardspace

    • No mutual interference between the transistors

    1+:¥0.1561

    500+:¥0.1419

    1000+:¥0.1351

    3000+:¥0.1287

    18,000
    2510+
    数据手册