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    共 899件相关商品
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    vp_BC856_BC857_BC858
    BC857B,215
    65 V, 100 mA PNP general-purpose transistors

    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    1+:¥0.0654

    500+:¥0.0594

    1000+:¥0.0566

    3000+:¥0.0539

    303,000
    数据手册
    MMBT3904
    MMBT3904,215
    40 V, 200 mA NPN switching transistor

    • Collector current capability IC = 200 mA

    • Collector-emitter voltage VCEO = 40 V

    1+:¥0.0654

    500+:¥0.0594

    1000+:¥0.0566

    3000+:¥0.0539

    150,000
    数据手册
    vp_BC807_SER
    BC807-40,215
    45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.0856

    500+:¥0.0778

    1000+:¥0.0741

    3000+:¥0.0706

    149,000
    数据手册
    PUMB11
    PUMB11,115
    50 V, 100 mA PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    84,000
    数据手册
    PMBT2907A
    PMBT2907A,215
    60V, 600 mA, PNP switching transistor

    1+:¥0.0735

    500+:¥0.0668

    1000+:¥0.0636

    3000+:¥0.0606

    78,000
    数据手册
    vp_BC817_SER
    BC817-40,215
    45 V, 500 mA NPN general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.0776

    500+:¥0.0706

    1000+:¥0.0672

    3000+:¥0.0640

    78,000
    数据手册
    vp_BC856_BC857_BC858
    BC856A,215
    65 V, 100 mA PNP general-purpose transistors

    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    1+:¥0.0633

    500+:¥0.0576

    1000+:¥0.0548

    3000+:¥0.0522

    60,000
    数据手册
    PUMB2
    PUMB2,115
    50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.1632

    500+:¥0.1484

    1000+:¥0.1413

    3000+:¥0.1346

    51,000
    数据手册
    BC858B
    BC858B,215
    PNP general purpose transistor

    • Low current (max. 100 mA)

    • Low voltage (max. 30 V)

    • AEC-Q101 qualified

    1+:¥0.0633

    500+:¥0.0576

    1000+:¥0.0548

    3000+:¥0.0522

    48,000
    数据手册
    PDTA144E series
    PDTA144ET,215
    PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.0867

    500+:¥0.0788

    1000+:¥0.0751

    3000+:¥0.0715

    42,000
    数据手册
    PMBT4401
    PMBT4401,185
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40 V)

    • AEC-Q101 qualified

    1+:¥0.0846

    500+:¥0.0770

    1000+:¥0.0733

    3000+:¥0.0698

    30,000
    数据手册
    PMBT3904QA
    PMBT2222AMYL
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.50 mm

    • Power dissipation comparable to SOT23

    1+:¥0.2020

    500+:¥0.1837

    1000+:¥0.1749

    3000+:¥0.1666

    30,000
    数据手册
    vp_BC817_SER
    BC817-25,215
    45 V, 500 mA NPN general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.0776

    500+:¥0.0706

    1000+:¥0.0672

    3000+:¥0.0640

    30,000
    数据手册
    PDTC114YU
    PDTC114YU,115
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    1+:¥0.1001

    500+:¥0.0910

    1000+:¥0.0866

    3000+:¥0.0825

    24,000
    数据手册
    PDTC114ET
    PDTC114ET,215
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    1+:¥0.0867

    500+:¥0.0788

    1000+:¥0.0751

    3000+:¥0.0715

    24,000
    数据手册
    PBHV9050T
    PBHV9050T,215
    500 V, 150 mA PNP high-voltage low VCEsat transistor

    • High voltage

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High collector current gain (hFE) at high IC

    1+:¥0.7725

    500+:¥0.7023

    1000+:¥0.6689

    3000+:¥0.6370

    18,000
    数据手册
    vp_BC847x_SER
    BC847B,215
    45 V, 100 mA NPN general-purpose transistors

    • General-purpose transistors

    • SMD plastic packages

    • Three different gain selections

    1+:¥0.0654

    500+:¥0.0594

    1000+:¥0.0566

    3000+:¥0.0539

    18,000
    数据手册
    BC847BVN
    BC847BVN,115
    45 V, 100 mA NPN/PNP general purpose transistor

    • 300 mW total power dissipation

    • Very small 1.6 mm x 1.2 mm ultra thin package

    • Replaces two SC-75/SC-89 packaged transistors on same PCB area

    • Reduced required PCB area

    • Reduced pick and place costs

    1+:¥0.4490

    500+:¥0.4081

    1000+:¥0.3887

    3000+:¥0.3702

    16,000
    数据手册
    PMP4201V
    PMP4201V,115
    45 V, 100 mA NPN/NPN matched double transistor

    • Current gain matching

    • Base-emitter voltage matching

    • Application-optimized pinout

    1+:¥0.9256

    500+:¥0.8414

    1000+:¥0.8014

    3000+:¥0.7632

    12,000
    数据手册
    PMBT2222A
    PMBT2222A,215
    NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40 V)

    • AEC-Q101 qualified

    1+:¥0.0735

    500+:¥0.0668

    1000+:¥0.0636

    3000+:¥0.0606

    12,000
    数据手册