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    共 311件相关商品
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    PMZ550UNE
    PMZ550UNEYL
    30 V, N-channel Trench MOSFET

    • Trench MOSFET technology

    • Low threshold voltage

    • Very fast switching

    • ElectroStatic Discharge (ESD) protection > 2 kV HBM

    • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm

    1+:¥0.2522

    500+:¥0.2293

    1000+:¥0.2184

    3000+:¥0.2080

    99,829,999
    数据手册
    PMXB56EN
    PMXB56ENZ
    30 V, N-channel Trench MOSFET

    • Trench MOSFET technology

    • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

    • Exposed drain pad for excellent thermal conduction

    • Very low Drain-Source on-state resistance RDSon = 49 mΩ

    • Very fast switching

    ¥0.6381

    99,999,999
    数据手册
    PMV90ENE
    PMV90ENER
    30 V, N-channel Trench MOSFET

    • Logic level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection > 2 kV HBM

    1+:¥0.5130

    500+:¥0.4664

    1000+:¥0.4442

    3000+:¥0.4230

    99,168,999
    数据手册
    PMV50UPE
    PMV50UPE,215
    20 V, single P-channel Trench MOSFET

    • 3 kV ESD protected

    • Trench MOSFET technology

    • Low threshold voltage

    1+:¥0.5807

    500+:¥0.5279

    1000+:¥0.5027

    3000+:¥0.4788

    97,497,999
    数据手册
    PMV45EN2
    PMV45EN2R
    30 V, N-channel Trench MOSFET

    • Logic level compatible

    • Very fast switching

    • Trench MOSFET technology

    • Enhanced power dissipation capability of 1115 mW

    1+:¥0.4508

    500+:¥0.4098

    1000+:¥0.3903

    3000+:¥0.3717

    99,510,999
    数据手册
    PMV37EN2
    PMV37EN2R
    30 V, N-channel Trench MOSFET

    • Logic level compatible

    • Very fast switching

    • Trench MOSFET technology

    • Enhanced power dissipation capability of 1115 mW

    1+:¥0.4454

    500+:¥0.4049

    1000+:¥0.3856

    3000+:¥0.3673

    99,999,999
    数据手册
    PMV30UN2
    PMV30UN2VL
    20 V, N-channel Trench MOSFET

    • Trench MOSFET technology

    • Low threshold voltage

    • Very fast switching

    • Enhanced power dissipation capability of 1000 mW

    1+:¥0.4079

    500+:¥0.3708

    1000+:¥0.3531

    3000+:¥0.3363

    99,999,999
    数据手册
    PMPB23XNE
    PMPB23XNE,115
    20 V, single N-channel Trench MOSFET

    • 1 kV ESD protection

    • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

    • Exposed drain pad for excellent thermal conduction

    • Tin-plated, 100% solderable side pads for optical solder inspection

    1+:¥0.7739

    500+:¥0.7035

    1000+:¥0.6700

    3000+:¥0.6381

    99,999,999
    数据手册
    PMPBxEN
    PMPB20EN,115
    30 V, N-channel Trench MOSFET

    • Trench MOSFET technology

    • Very fast switching

    • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

    • Exposed drain pad for excellent thermal conduction

    • Tin-plated 100 % solderable side pads for optical solder inspection

    1+:¥0.6118

    500+:¥0.5562

    1000+:¥0.5297

    3000+:¥0.5045

    99,951,999
    数据手册
    PMPB14XP
    PMPB14XPX
    12 V, P-channel Trench MOSFET

    • Low threshold voltage

    • Trench MOSFET technology

    • Side wettable flanks for optical solder inspection

    • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

    • Exposed drain pad for excellent thermal conduction

    1+:¥0.8876

    500+:¥0.8069

    1000+:¥0.7685

    3000+:¥0.7319

    99,864,999
    数据手册
    PMPB13XNE
    PMPB13XNEZ
    30 V, single N-channel Trench MOSFET

    • 1 kV ESD protection

    • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

    • Exposed drain pad for excellent thermal conduction

    • Tin-plated, 100% solderable side pads for optical solder inspection

    1+:¥0.8586

    500+:¥0.7806

    1000+:¥0.7434

    3000+:¥0.7080

    96,060,999
    数据手册
    PMPBxEN
    PMPB11EN,115
    30 V, N-channel Trench MOSFET

    • Trench MOSFET technology

    • Very fast switching

    • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

    • Exposed drain pad for excellent thermal conduction

    • Tin-plated 100 % solderable side pads for optical solder inspection

    1+:¥0.9928

    500+:¥0.9026

    1000+:¥0.8596

    3000+:¥0.8186

    99,759,999
    数据手册
    PMCXB900UE
    PMCXB900UEZ
    20 V, complementary N/P-channel Trench MOSFET

    • Trench MOSFET technology

    • Very low threshold voltage for portable applications: VGS(th) = 0.7 V

    • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

    • ElectroStatic Discharge (ESD) protection > 1 kV HBM

    1+:¥0.6654

    500+:¥0.6050

    1000+:¥0.5761

    3000+:¥0.5487

    5000+:¥0.5487

    98,974,999
    数据手册
    vp_NX3008NBKMB
    NX3008NBKMB,315
    30 V, single N-channel Trench MOSFET

    • Very fast switching

    • Low threshold voltage

    • Trench MOSFET technology

    • ESD protection up to 2 kV

    • Ultra thin package profile with 0.37 mm height

    1+:¥0.2973

    500+:¥0.2703

    1000+:¥0.2574

    3000+:¥0.2451

    99,999,999
    数据手册
    NX138BKS
    NX138BKSX
    60 V, dual N-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection > 2 kV HBM

    1+:¥0.2372

    500+:¥0.2156

    1000+:¥0.2054

    3000+:¥0.1956

    0
    数据手册
    BSS87
    BSS87,115
    200 V, N-channel vertical D-MOS transistor

    • Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.

    • Very fast switching

    • No secondary breakdown

    1+:¥0.9155

    500+:¥0.8323

    1000+:¥0.7549

    3000+:¥0.7549

    99,999,999
    数据手册
    BSS192
    BSS192,115
    240 V, P-channel vertical D-MOS transistor

    • Direct interface to Complementary (C-MOS) transitor and Transistor-Transistor Logic (TTL) devices

    • Very fast switching

    • No secondary breakdown

    1+:¥1.2901

    500+:¥1.1728

    1000+:¥1.1170

    3000+:¥1.0638

    99,681,999
    数据手册
    BSP250
    BSP250,115
    P-channel vertical D-MOS intermediate level FET

    • Low conduction losses due to low on-state resistance

    • Suitable for high frequency applications due to fast switching characteristics

    1+:¥1.7216

    500+:¥1.5651

    1000+:¥1.4905

    3000+:¥1.4196

    99,959,999
    数据手册
    BSP225
    BSP225,115
    P-channel vertical D-MOS intermediate level FET

    • Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.

    • Very fast switching

    • No secondary breakdown

    1+:¥1.7205

    500+:¥1.5641

    1000+:¥1.4896

    3000+:¥1.4187

    99,996,999
    数据手册
    N
    BSP126,115
    channel vertical D-MOS logic level FET

    • Direct interface to Complementary (C-MOS) transitor and Transistor-Transistor Logic (TTL) devices

    • Very fast switching

    • No secondary breakdown

    1+:¥1.5606

    500+:¥1.4187

    1000+:¥1.3512

    3000+:¥1.2868

    99,999,999
    数据手册