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    PESD5V0F1BRSF
    PESD5V0F1BRSFYL
    Extremely low capacitance bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance Cd = 0.25 pF

    • Minimized capacitance variation over voltage

    • ESD protection up to ±10 kV according to IEC 61000-4-2

    • Ultra small SMD package

    ¥0.00¥0.4202

    629,980
    数据手册
    BAS70L
    BAS70L,315
    General-purpose Schottky diode

    • High switching speed

    • Low leakage current

    • High breakdown voltage

    • Low capacitance

    ¥0.00¥0.1480

    500,000
    数据手册
    74HC164
    74HC164PW,118
    8-bit serial-in, parallel-out shift register

    • Wide supply voltage range from 2.0 to 6.0 V

    • CMOS low power dissipation

    • High noise immunity

    • Input levels:

      • For 74HC164: CMOS level

      • For 74HCT164: TTL level

    • Gated serial data inputs

    • Asynchronous master reset

    • Complies with JEDEC standards

      • JESD8C (2.7 V to 3.6 V)

      • JESD7A (2.0 V to 6.0 V)

    • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

    • ESD protection:

      • HBM JESD22-A114F exceeds 2000 V

      • MM JESD22-A115-A exceeds 200 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

    ¥0.00¥0.6653

    500,000
    数据手册
    PESD5V0C1BSF
    PESD5V0C1BSFYL
    Ultra low capacitance bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance Cd = 0.2 pF

    • ESD protection up to ±20 kV according to IEC 61000-4-2

    • Ultra small SMD package

    ¥0.00¥0.2695

    396,000
    数据手册
    BAV99
    BAV99,215
    High-speed switching diode

    • High switching speed: trr ≤ 4 ns

    • Low capacitance: Cd ≤ 1.5 pF

    • Low leakage current

    • Reverse voltage: VR ≤ 100 V

    • Small SMD plastic packages

    ¥0.00¥0.0654

    362,900
    数据手册
    vp_BC856_BC857_BC858
    BC857B,215
    65 V, 100 mA PNP general-purpose transistors

    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    ¥0.00¥0.0654

    303,000
    数据手册
    PESD5V0L1UA
    PESD5V0L1UA,115
    Low capacitance unidirectional ESD protection diode

    • Unidirectional ESD protection of one line

    • Low diode capacitance: Cd = 25 pF

    • Low clamping voltage: VCL = 12 V

    • Very low leakage current: IRM = 10 nA

    • ESD protection up to 26 kV

    • IEC 61000-4-2; level 4 (ESD)

    ¥0.00¥0.3378

    290,990
    数据手册
    BAS16J
    BAS16J,115
    High-speed switching diode

    • High switching speed: trr ≤ 4 ns

    • Low capacitance

    • Low leakage current

    • Reverse voltage: VR ≤ 100 V

    • Repetitive peak reverse voltage: VRRM ≤ 100 V

    ¥0.00¥0.1163

    288,000
    数据手册
    BSS138BK
    BSS138BK,215
    60 V, 360 mA N-channel Trench MOSFET

    • Logic-level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ESD protection up to 1.5 kV

    • AEC-Q101 qualified

    ¥0.00¥0.2564

    276,000
    数据手册
    PESD2IVN24
    PESD2IVN24-TR
    T - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • Typ. diode capacitance matching: ∆Cd/Cd = 0.1 %

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    ¥0.00¥0.3704

    272,650
    数据手册
    BSN20BK
    BSN20BKR
    60 V, N-channel Trench MOSFET

    • Logic-level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection: 2 kV HBM

    ¥0.00¥0.3162

    252,000
    数据手册
    PESD1IVN24
    PESD1IVN24-AX
    A - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    ¥0.00¥0.2919

    245,374
    数据手册
    BZX384 series
    BZX384-C15,115
    Voltage regulator diodes
    • Total power dissipation: max. 300 mW
    • Two tolerance series: +-2pct and approx. +-5pct
    • Working voltage range: nominal 2.4 to 75 V (E24 range)
    • Non-repetitive peak reverse power dissipation: max. 40 W.
    • AEC-Q101 qualified

    ¥0.00¥0.1152

    242,730
    数据手册
    PDTC143ZT
    PDTC143ZT,215
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    ¥0.00¥0.0867

    221,995
    数据手册
    PESD5V0V1BB
    PESD5V0V1BB,115
    Very low capacitance bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Very low diode capacitance: Cd = 11 pF

    • Max. peak pulse power: PPPM = 45 W

    • Low clamping voltage: VCL = 12.5 V

    • Ultra low leakage current: IRM < 1 nA

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPPM = 4.8 A

    ¥0.00¥0.4337

    219,000
    数据手册
    BAS21AVD
    BAS21AVD,135
    High-voltage switching diodes

    • High switching speed: trr ≤ 50 ns

    • Reverse voltage: VR ≤ 200 V

    • Repetitive peak reverse voltage: VRRM ≤ 250 V

    • Small SMD plastic package

    • Low capacitance: Cd ≤ 5 pF

    • Repetitive peak forward current: IFRM ≤ 1 A

    • AEC-Q101 qualified

    ¥0.00¥0.5174

    150,000
    数据手册
    vp_BC807_SER
    BC807-40,215
    45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    ¥0.00¥0.0856

    149,000
    数据手册
    BZX384 series
    BZX384-C5V1,115
    Voltage regulator diodes
    • Total power dissipation: max. 300 mW
    • Two tolerance series: +-2pct and approx. +-5pct
    • Working voltage range: nominal 2.4 to 75 V (E24 range)
    • Non-repetitive peak reverse power dissipation: max. 40 W.
    • AEC-Q101 qualified

    ¥0.00¥0.1152

    144,000
    数据手册
    74LVC1G08
    74LVC1G08GW-Q100,1
    Q100 - Single 2-input AND gate

    • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

      • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

    • Wide supply voltage range from 1.65 V to 5.5 V

    • High noise immunity

    • ±24 mA output drive (VCC = 3.0 V)

    • CMOS low power dissipation

    • Direct interface with TTL levels

    • Overvoltage tolerant inputs to 5.5 V

    • IOFF circuitry provides partial Power-down mode operation

    • Latch-up performance ≤ 250 mA

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

      • JESD36 (4.5 V to 5.5 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    ¥0.00¥0.2754

    105,000
    数据手册
    BZX84 series
    BZX84-C4V7,215
    Voltage regulator diodes
    • Total power dissipation: ≤ 250 mW
    • Three tolerance series: ±1%, ±2% and approximately ±5%
    • AEC-Q101 qualified
    • Working voltage range: nominal 2.4 V to 75 V (E24 range)
    • Non-repetitive peak reverse power dissipation: ≤ 40 W

    ¥0.00¥0.0846

    104,898
    数据手册