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PXN4R7-30QLJ30QL - 30 V, N-channel Trench MOSFETLogic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥1.7370
500+:¥1.5791
1000+:¥1.5039
3000+:¥0.9487
- 11,999
- 2352+
- 数据手册
限量供应
PSMNR60-25YLHX25YLH - N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology100% avalanche tested at I(AS) = 190 A
Optimized for low RDSon
Low leakage < 1 μA at 25 °C
Low spiking and ringing for low EMI designs
Optimized for 4.5 V gate drive
Copper-clip for low parasitic inductance and resistance
High reliability LFPAK package, qualified to 175 °C
Wave solderable; exposed leads for optimal solder coverage and visual solder inspection
1+:¥6.0857
500+:¥5.5325
1000+:¥5.2690
1500+:¥4.2961
3000+:¥4.2961
- 9,000
- 2352+
- 数据手册
限量供应
PSMN7R0-60YS,11560YS - N-channel LFPAK 60 V, 6.4 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥3.7938
500+:¥3.4490
1000+:¥3.2847
1500+:¥2.8805
3000+:¥2.8805
- 9,000
- 2351+
- 数据手册
限量供应
PSMN5R2-60YLX60YL - N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56Advanced TrenchMOS provides low RDSon and low gate charge
Logic level gate operation
Avalanche rated, 100% tested
LFPAK provides maximum power density in a Power SO8 package
1+:¥3.8327
500+:¥3.4842
1000+:¥3.3183
1500+:¥2.9198
3000+:¥2.9198
- 9,000
- 2341+
- 数据手册
限量供应
PSMN4R0-60YS,11560YS - N-channel LFPAK 60 V, 4.0 mΩ standard level FETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥5.2980
500+:¥4.8164
1000+:¥4.5870
1500+:¥3.2147
3000+:¥3.2147
- 9,000
- 2350+
- 数据手册
限量供应
PSMN1R2-25YLDX25YLD - N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology100% Avalanche tested at I(AS) = 169 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
1+:¥3.5540
500+:¥3.2309
1000+:¥3.0770
1500+:¥2.2153
3000+:¥2.2153
- 9,000
- 2348+
- 数据手册
限量供应
PSMN1R2-25YL,11525YL - N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAKAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥6.3591
500+:¥5.7810
1000+:¥5.5057
1500+:¥4.2699
3000+:¥4.2699
- 9,000
- 2350+
- 数据手册
限量供应
PSMN026-80YS,11580YS - N-channel LFPAK 80 V 27.5 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥2.0633
500+:¥1.8757
1000+:¥1.7864
1500+:¥1.5746
3000+:¥1.5746
- 9,000
- 2348+
- 数据手册
限量供应
PSMN020-100YS,115100YS - N-channel 100V 20.5mΩ standard level MOSFET in LFPAKAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥3.0449
500+:¥2.7680
1000+:¥2.6362
1500+:¥2.3693
3000+:¥2.3693
- 9,000
- 2349+
- 数据手册
限量供应
PSMN1R8-40YLC,11540YLC - N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technologyHigh reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1+:¥5.0653
500+:¥4.6048
1000+:¥4.3855
1500+:¥3.4490
3000+:¥3.4490
- 8,760
- 2350+
- 数据手册
限量供应
PSMN4R5-40PS,12740PS - N-channel 40 V 4.6 mΩ standard level MOSFETHigh efficiency due to low switching and conduction losses
Robust construction for demanding applications
Standard level gate
1+:¥6.9397
500+:¥6.3088
1000+:¥5.9576
3000+:¥5.9576
- 6,000
- 2350+
- 数据手册
限量供应
PSMN1R2-25YLC,11525YLC - N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technologyHigh reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1+:¥3.0000
500+:¥2.7273
1000+:¥2.5974
3000+:¥2.4737
6000+:¥2.2439
- 6,000
- 2349+
- 数据手册
限量供应
PSMN069-100YS,115100YS - N-channel LFPAK 100 V 72.4 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥1.6571
500+:¥1.5065
1000+:¥1.4347
1500+:¥1.2440
3000+:¥1.3664
6000+:¥1.2444
- 6,000
- 2348+
- 数据手册
限量供应
PSMN102-200Y,115channel TrenchMOS SiliconMAX standard level FETHigher operating power due to low thermal resistance
Suitable for high frequency applications due to fast switching characteristics
1+:¥3.7316
500+:¥3.3924
1000+:¥3.2309
1500+:¥2.6028
3000+:¥2.6028
- 5,980
- 2350+
- 数据手册
限量供应
PSMN4R2-60PLQ60PL - N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Logic level gate
1+:¥15.8821
5000+:¥6.9636
- 5,000
- 2349+
- 数据手册
限量供应
PSMN022-30PL,12730PL - N-channel 30 V 22 mΩ logic level MOSFETHigh efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
1+:¥8.6428
5000+:¥3.6866
- 5,000
- 2348+
- 数据手册
限量供应
PSMNR90-30BL,11830BL - N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAKHigh efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
1+:¥11.4102
500+:¥10.3729
800+:¥9.6631
1000+:¥9.8789
3000+:¥9.4085
4800+:¥9.6631
- 4,800
- 2347+
- 数据手册
限量供应
PSMN8R7-80BS,11880BS - N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAKHigh efficiency due to low switching and conduction losses
Suitable for standard level gate drive
1+:¥5.9276
500+:¥5.3887
800+:¥4.5960
1000+:¥5.1321
3000+:¥4.8877
4800+:¥4.5960
- 4,800
- 2351+
- 数据手册
限量供应
PSMN1R7-60BS,11860BS - N-channel 60 V 2 mΩ standard level MOSFET in D2PAKHigh efficiency due to low switching and conduction losses
Robust construction for demanding applications
Standard level gate
1+:¥11.2153
500+:¥10.1957
800+:¥9.6631
1000+:¥9.7102
3000+:¥9.2478
4800+:¥9.6631
- 4,800
- 2352+
- 数据手册
限量供应
PSMN1R1-40BS,11840BS - N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAKHigh efficiency due to low switching and conduction losses
Robust construction for demanding applications
Standard level gate
1+:¥11.4102
500+:¥10.3729
800+:¥9.6631
1000+:¥9.8789
3000+:¥9.4085
4800+:¥9.6631
- 4,800
- 2349+
- 数据手册
限量供应