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    共 383件相关商品
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    PXP700
    PXP700-150QSJ
    150QS - 150 V, P-channel Trench MOSFET

    1+:¥1.5874

    500+:¥1.4431

    1000+:¥1.3744

    3000+:¥1.3089

    99,975,999
    数据手册
    PXP013
    PXP013-30QLJ
    30QL - 30 V, P-channel Trench MOSFET

    • Logic level compatible

    • Trench MOSFET technology

    • MLPAK33 package (3.3 x 3.3 mm footprint)

    1+:¥1.3599

    500+:¥1.2363

    1000+:¥1.1774

    3000+:¥1.1213

    99,993,999
    数据手册
    PXN040
    PXN040-100QSJ
    100QS - N-channel 100 V, 40 mOhm, standard level Trench MOSFET in MLPAK33

    • Standard level compatibility

    • Trench MOSFET technology

    • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)

    1+:¥0.6633

    500+:¥0.6030

    1000+:¥0.5743

    3000+:¥0.5469

    0
    数据手册
    PSMN4R4
    PSMN4R4-80BS,118
    80BS - N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK

    • High efficiency due to low switching and conduction losses

    • Robust construction for demanding applications

    • Standard level gate

    1+:¥10.4948

    500+:¥9.5407

    1000+:¥9.0864

    3000+:¥8.6537

    0
    数据手册

    限量供应

    PXN4R7
    PXN4R7-30QLJ
    30QL - 30 V, N-channel Trench MOSFET

    • Logic-level compatible

    • Trench MOSFET technology

    • MLPAK33 package (3.3 x 3.3 mm footprint)

    1+:¥1.8396

    500+:¥1.6724

    1000+:¥1.5928

    3000+:¥1.5169

    0
    2352+
    数据手册

    限量供应

    PSMNR60
    PSMNR60-25YLHX
    25YLH - N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology

    • 100% avalanche tested at I(AS) = 190 A

    • Optimized for low RDSon

    • Low leakage < 1 μA at 25 °C

    • Low spiking and ringing for low EMI designs

    • Optimized for 4.5 V gate drive

    • Copper-clip for low parasitic inductance and resistance

    • High reliability LFPAK package, qualified to 175 °C

    • Wave solderable; exposed leads for optimal solder coverage and visual solder inspection

    1+:¥6.4012

    500+:¥5.8193

    1000+:¥5.5421

    3000+:¥5.2782

    9,000
    2352+
    数据手册

    限量供应

    PSMN7R0
    PSMN7R0-60YS,115
    60YS - N-channel LFPAK 60 V, 6.4 mΩ standard level MOSFET

    • Advanced TrenchMOS provides low RDSon and low gate charge

    • High efficiency gains in switching power converters

    • Improved mechanical and thermal characteristics

    • LFPAK provides maximum power density in a Power SO8 package

    1+:¥3.9905

    500+:¥3.6278

    1000+:¥3.4550

    3000+:¥3.2905

    9,000
    2351+
    数据手册
    PSMN1R0
    PSMN1R0-40YLDX
    40YLD - N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

    • 280 A capability

    • Avalanche rated, 100% tested at IAS = 190 A

    • NextPower-S3 technology delivers 'superfast switching with soft recovery'

    • Low QRR, QG and QGD for high system efficiency and low EMI designs

    • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage

    • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

    • High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualifiedto150°C

    • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints

    • Low parasitic inductance and resistance

    1+:¥5.7572

    500+:¥5.2338

    1000+:¥4.9846

    3000+:¥4.7472

    0
    2446+
    数据手册

    限量供应

    PSMN8R7
    PSMN8R7-80BS,118
    80BS - N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK

    • High efficiency due to low switching and conduction losses

    • Suitable for standard level gate drive

    1+:¥6.2348

    500+:¥5.6680

    1000+:¥5.3981

    3000+:¥5.1411

    4,800
    2351+
    数据手册

    限量供应

    N
    PSMN057-200B,118
    channel TrenchMOS SiliconMAX standard level FET

    • Higher operating power due to low thermal resistance

    • Low conduction losses due to low on-state resistance

    • Suitable for high frequency applications due to fast switching characteristics

    1+:¥10.0021

    500+:¥9.0928

    1000+:¥8.6598

    3000+:¥8.2475

    4,800
    2351+
    数据手册

    限量供应

    PHB45NQ15T
    PHB45NQ15T,118
    N-channel TrenchMOS standard level FET

    • Higher operating power due to low thermal resistance

    • Low conduction losses due to low on-state resistance

    • Simple gate drive required due to low gate charge

    • Suitable for high frequency applications due to fast switching characteristics

    1+:¥6.8369

    500+:¥6.2154

    1000+:¥5.9194

    3000+:¥5.6376

    4,800
    2351+
    数据手册

    限量供应

    PSMN2R0
    PSMN2R0-30YLDX
    30YLD - N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

    • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

    • Superfast switching with soft-recovery; s-factor > 1

    • Low spiking and ringing for low EMI designs

    • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C

    • Optimised for 4.5 V gate drive

    • Low parasitic inductance and resistance

    • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C

    • Wave solderable; exposed leads for optimal visual solder inspection

    1+:¥2.5652

    500+:¥2.3320

    1000+:¥2.2209

    3000+:¥2.1152

    0
    2352+
    数据手册

    限量供应

    PSMN1R8
    PSMN1R8-40YLC,115
    40YLC - N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology

    • High reliability Power SO8 package, qualified to 175°C

    • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

    • Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

    • Ultra low Rdson and low parasitic inductance

    1+:¥5.3279

    500+:¥4.8435

    1000+:¥4.6129

    3000+:¥4.3932

    3,000
    2350+
    数据手册

    限量供应

    PSMN075
    PSMN075-100MSEX
    100MSE - N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications

    • Enhanced forward biased safe operating area for superior linear mode operation

    • Low Rdson for low conduction losses

    • Ultra reliable LFPAK33 package – no glue, no wires, 175°C

    • Very low IDSS

    1+:¥1.9674

    500+:¥1.7885

    1000+:¥1.7033

    3000+:¥1.6222

    0
    2352+
    数据手册

    限量供应

    PSMN4R2
    PSMN4R2-60PLQ
    60PL - N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

    • High efficiency due to low switching & conduction losses

    • Robust construction for demanding applications

    • Logic level gate

    ¥15.8821

    4,000
    2349+
    数据手册

    限量供应

    PSMN1R7
    PSMN1R7-60BS,118
    60BS - N-channel 60 V 2 mΩ standard level MOSFET in D2PAK

    • High efficiency due to low switching and conduction losses

    • Robust construction for demanding applications

    • Standard level gate

    1+:¥11.7967

    500+:¥10.7242

    1000+:¥10.2136

    3000+:¥9.7272

    4,000
    2352+
    数据手册

    限量供应

    PHB33NQ20T
    PHB33NQ20T,118
    N-channel TrenchMOS standard level FET

    • Higher operating power due to low thermal resistance

    • Low conduction losses due to low on-state resistance

    • Simple gate drive required due to low gate charge

    • Suitable for high frequency applications due to fast switching characteristics

    1+:¥6.8219

    500+:¥6.2017

    1000+:¥5.9064

    3000+:¥5.6252

    4,000
    2345+
    数据手册

    限量供应

    PXP012
    PXP012-30QLJ
    30QL - 30 V, P-channel Trench MOSFET

    • Logic-level compatible

    • Trench MOSFET technology

    • MLPAK33 package (3.3 x 3.3 mm footprint)

    1+:¥1.4500

    500+:¥1.3182

    1000+:¥1.2554

    3000+:¥1.1957

    0
    2351+
    数据手册

    限量供应

    PXN8R3
    PXN8R3-30QLJ
    30QL - 30 V, N-channel Trench MOSFET

    • Logic-level compatible

    • Trench MOSFET technology

    • Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies

    • Superfast switching with soft-recovery

    • Low spiking and ringing for low EMI designs

    • MLPAK33 package (3.3 x 3.3 mm footprint)

    1+:¥1.2762

    500+:¥1.1601

    1000+:¥1.1049

    3000+:¥1.0523

    0
    2352+
    数据手册

    限量供应

    PXN6R7
    PXN6R7-30QLJ
    30QL - 30 V, N-channel Trench MOSFET

    • Logic-level compatible

    • Trench MOSFET technology

    • Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies

    • Superfast switching with soft-recovery

    • Low spiking and ringing for low EMI designs

    • MLPAK33 package (3.3 x 3.3 mm footprint)

    1+:¥1.4844

    500+:¥1.3494

    1000+:¥1.2852

    3000+:¥1.2240

    0
    2352+
    数据手册