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    共 20件相关商品
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    PNE20080EPE
    PNE20080EPEZ
    200 V, 8 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 8 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.6479

    500+:¥1.4981

    1000+:¥1.4267

    3000+:¥1.3588

    5,000
    数据手册
    PNE20060EPE
    PNE20060EPEZ
    200 V, 6 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 6 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.4275

    500+:¥1.2978

    1000+:¥1.2360

    3000+:¥1.1771

    5,000
    数据手册
    PNE20040CPE
    PNE20040CPEZ
    200 V, 2 x 2 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 2 A (per diode)

    • Switching time: trr ≤ 25 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.0858

    500+:¥0.9871

    1000+:¥0.9401

    3000+:¥0.8953

    5,000
    数据手册
    PNE200100EPE
    PNE200100EPEZ
    200 V, 10 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 10 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.8949

    500+:¥1.7227

    1000+:¥1.6406

    3000+:¥1.5625

    4,980
    数据手册

    新品

    PNU65010EP
    PNU65010EPX
    650 V, 1 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥0.7805

    500+:¥0.7096

    1000+:¥0.6758

    3000+:¥0.6436

    3,000
    数据手册
    PNE20030EP
    PNE20030EPX
    200 V, 3 A hyperfast  recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 3 A

    • Switching time trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥0.7877

    500+:¥0.7161

    1000+:¥0.6820

    3000+:¥0.6495

    3,000
    数据手册
    PNE20020ER
    PNE20020ERX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥0.5285

    500+:¥0.4805

    1000+:¥0.4576

    3000+:¥0.4358

    3,000
    数据手册
    PNE20020AER
    PNE20020AERX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Low forward voltage

    • Pt doped lifetime control

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    1+:¥0.6306

    500+:¥0.5733

    1000+:¥0.5460

    3000+:¥0.5200

    3,000
    数据手册
    PNE20010ER
    PNE20010ERX
    200 V, 1 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 1 A

    • Hyperfast recovery time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥0.5256

    500+:¥0.4778

    1000+:¥0.4551

    3000+:¥0.4334

    3,000
    数据手册

    新品

    PNU65030EP
    PNU65030EPX
    650 V, 3 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 3 A

    • Typical switching time trr of 41 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.1623

    500+:¥1.0566

    1000+:¥1.0063

    3000+:¥0.9584

    2,996
    数据手册
    PNE20020EP
    PNE20020EPX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q qualified

    1+:¥0.6236

    500+:¥0.5669

    1000+:¥0.5399

    3000+:¥0.5142

    2,800
    数据手册

    新品

    PNU65020EP
    PNU65020EPX
    650 V, 2 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 2 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥0.9684

    500+:¥0.8803

    1000+:¥0.8384

    3000+:¥0.7985

    0
    数据手册

    新品

    PNU65010ER
    PNU65010ERX
    650 V, 1 A ultrafast  recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥0.7285

    500+:¥0.6623

    1000+:¥0.6307

    3000+:¥0.6007

    0
    数据手册
    PNE20080CPE
    PNE20080CPEZ
    200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥2.0683

    500+:¥1.8803

    1000+:¥1.7908

    3000+:¥1.7055

    0
    数据手册
    PNE20060CPE
    PNE20060CPEZ
    200 V, 2 x 3 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 3 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.6541

    500+:¥1.5037

    1000+:¥1.4321

    3000+:¥1.3639

    0
    数据手册
    PNE20050EP
    PNE20050EPX
    200 V, 5 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 5 A

    • Switching time: trr ≤ 30 ns

    • Planar die design

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    1+:¥0.9991

    500+:¥0.9082

    1000+:¥0.8650

    3000+:¥0.8238

    0
    数据手册
    PNE20040EP
    PNE20040EPX
    200 V, 4 A hyperfast switching recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A

    • Switching time: trr ≤ 30 ns

    • Planar die design

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    1+:¥0.9358

    500+:¥0.8507

    1000+:¥0.8102

    3000+:¥0.7716

    0
    数据手册
    PNE20040EPE
    PNE20040EPEZ
    200 V, 4 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.3092

    500+:¥1.1901

    1000+:¥1.1335

    3000+:¥1.0795

    0
    数据手册

    新品

    PNE20010EXD
    PNE20010EXDX
    200 V, 1 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 1 A

    • Hyperfast recovery time: trr ≤ 25 ns

    • Planar die design with Pt doped life time control

    • Low inductance

    • Small and flat lead SMD plastic package, typical height 0.68 mm

    • High power capability due to clip-bond technology

    1+:¥0.3683

    500+:¥0.3348

    1000+:¥0.3189

    3000+:¥0.3037

    0
    数据手册
    PNE200100CPE
    PNE200100CPEZ
    200 V, 2 x 5 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 5 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥2.2745

    500+:¥2.0677

    1000+:¥1.9693

    3000+:¥1.8755

    0
    数据手册