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    共 20件相关商品
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    PNE20080EPE
    PNE20080EPEZ
    200 V, 8 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 8 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.7334

    500+:¥1.5758

    1000+:¥1.5008

    3000+:¥1.4293

    5,000
    2352+
    数据手册
    PNE20010ER
    PNE20010ERX
    200 V, 1 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 1 A

    • Hyperfast recovery time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥0.4787

    500+:¥0.4352

    1000+:¥0.4145

    3000+:¥0.3947

    0
    2350+
    数据手册
    PNE20020ER
    PNE20020ERX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥0.4948

    500+:¥0.4498

    1000+:¥0.4284

    3000+:¥0.4080

    0
    2352+
    数据手册
    PNE20020EP
    PNE20020EPX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q qualified

    1+:¥0.5957

    500+:¥0.5415

    1000+:¥0.5157

    3000+:¥0.4912

    2,800
    2352+
    数据手册

    新品

    PNU65030EP
    PNU65030EPX
    650 V, 3 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 3 A

    • Typical switching time trr of 41 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.2225

    500+:¥1.1114

    1000+:¥1.0584

    3000+:¥1.0080

    0
    2346+
    数据手册

    新品

    PNU65020EP
    PNU65020EPX
    650 V, 2 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 2 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.0186

    500+:¥0.9260

    1000+:¥0.8819

    3000+:¥0.8399

    0
    数据手册

    新品

    PNU65010ER
    PNU65010ERX
    650 V, 1 A ultrafast  recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥0.7663

    500+:¥0.6967

    1000+:¥0.6635

    3000+:¥0.6319

    0
    数据手册

    新品

    PNU65010EP
    PNU65010EPX
    650 V, 1 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥0.8211

    500+:¥0.7464

    1000+:¥0.7109

    3000+:¥0.6770

    0
    2346+
    数据手册
    PNE20080CPE
    PNE20080CPEZ
    200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥2.1756

    500+:¥1.9778

    1000+:¥1.8836

    3000+:¥1.7939

    0
    数据手册
    PNE20060EPE
    PNE20060EPEZ
    200 V, 6 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 6 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.5016

    500+:¥1.3650

    1000+:¥1.3000

    3000+:¥1.2381

    0
    2336+
    数据手册
    PNE20060CPE
    PNE20060CPEZ
    200 V, 2 x 3 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 3 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.7398

    500+:¥1.5817

    1000+:¥1.5063

    3000+:¥1.4346

    0
    数据手册
    PNE20050EP
    PNE20050EPX
    200 V, 5 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 5 A

    • Switching time: trr ≤ 30 ns

    • Planar die design

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    1+:¥0.9552

    500+:¥0.8684

    1000+:¥0.8270

    3000+:¥0.7877

    0
    数据手册
    PNE20040EP
    PNE20040EPX
    200 V, 4 A hyperfast switching recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A

    • Switching time: trr ≤ 30 ns

    • Planar die design

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    1+:¥0.8951

    500+:¥0.8138

    1000+:¥0.7750

    3000+:¥0.7381

    0
    数据手册
    PNE20040EPE
    PNE20040EPEZ
    200 V, 4 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.3770

    500+:¥1.2519

    1000+:¥1.1922

    3000+:¥1.1355

    0
    数据手册
    PNE20040CPE
    PNE20040CPEZ
    200 V, 2 x 2 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 2 A (per diode)

    • Switching time: trr ≤ 25 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.1420

    500+:¥1.0382

    1000+:¥0.9887

    3000+:¥0.9417

    0
    2328+
    数据手册
    PNE20030EP
    PNE20030EPX
    200 V, 3 A hyperfast  recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 3 A

    • Switching time trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥0.7535

    500+:¥0.6850

    1000+:¥0.6523

    3000+:¥0.6213

    0
    2344+
    数据手册
    PNE20020AER
    PNE20020AERX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Low forward voltage

    • Pt doped lifetime control

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    1+:¥0.6032

    500+:¥0.5484

    1000+:¥0.5222

    3000+:¥0.4974

    0
    2349+
    数据手册

    新品

    PNE20010EXD
    PNE20010EXDX
    200 V, 1 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 1 A

    • Hyperfast recovery time: trr ≤ 25 ns

    • Planar die design with Pt doped life time control

    • Low inductance

    • Small and flat lead SMD plastic package, typical height 0.68 mm

    • High power capability due to clip-bond technology

    1+:¥0.3520

    500+:¥0.3200

    1000+:¥0.3048

    3000+:¥0.2903

    0
    数据手册
    PNE200100EPE
    PNE200100EPEZ
    200 V, 10 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 10 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.9931

    500+:¥1.8119

    1000+:¥1.7256

    3000+:¥1.6435

    0
    2341+
    数据手册
    PNE200100CPE
    PNE200100CPEZ
    200 V, 2 x 5 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 5 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥2.3924

    500+:¥2.1749

    1000+:¥2.0713

    3000+:¥1.9727

    0
    数据手册