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商品编号:
PSMN1R0-40ULDX
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简述:
40ULD - N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595
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描述:
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications.
- 数据手册:
特性
Improved creepage and clearance – meets the requirements of UL2595
280 A capability
Avalanche rated, 100% tested at IAS = 190 A
NextPower-S3 technology delivers 'superfast switching with soft recovery'
Low QRR, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
Low parasitic inductance and resistance
目标应用
Brushed and brushless motor control
Battery powered appliances where enhanced creepage and clearance is required to meet UL2595
For non-UL2595 applications please use PSMN1R0-40YLD
