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商品编号:
NGW30T60M3DFQ
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简述:
600 V, 30 A trench field-stop IGBT with full rated silicon diode
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描述:
The NGW30T60M3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T60M3DF is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 600 V, 30 A IGBT is optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.
- 数据手册:
特性
Collector current (IC) rated at 30 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
5 μs short circuit withstand time
RoHS compliant, lead-free plating
目标应用
Motor drives for industrial and consumer appliances
- Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
Power inverters
Uninterruptible Power Supply (UPS) inverter
Photovoltaic (PV) strings
EV charging
Induction heating
Welding
