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商品编号:
PSC1065HJ
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简述:
650 V, 10 A SiC Schottky diode in DPAK R2P
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描述:
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
- 数据手册:
特性
Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure-of-merit (Qc x VF)
High IFSM capability
High power density
Reduced system cost
System miniaturization
Reduced EMI
目标应用
Switch Mode Power Supply (SMPS)
AC-DC and DC-DC converter
Battery charging infrastructure
Server and telecom power supply
Uninterruptible Power Supply (UPS)
Photovoltaic inverters
