PMGD290XN
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PMGD290XN
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商品编号:
PMGD290XN,115
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简述:
Dual N-channel TrenchMOS extremely low level FET
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描述:
Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
- 数据手册:
库存: 99999999
特性
Low conduction losses due to low on-state resistance
Saves PCB space due to small footprint (40 % smaller than SOT23)
Suitable for high frequency applications due to fast switching characteristics
Suitable for low gate drive sources
目标应用
Driver circuits
Switching in portable appliances
数据手册
