20 V, dual N
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请参阅产品规格
20 V, dual N
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商品编号:
PMDPB30XN,115
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简述:
channel Trench MOSFET
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描述:
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 246000
特性
Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
目标应用
Relay driver
LED backlight driver
Low-side loadswitch
Switching circuits
数据手册
