PBSS5560PA
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PBSS5560PA
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商品编号:
PBSS5560PA,115
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简述:
60 V, 5 A PNP low VCEsat (BISS) transistor
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描述:
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4560PA.
- 数据手册:
库存: 99984999
特性
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
目标应用
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
数据手册
