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请参阅产品规格
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商品编号:
PBSS5330PASX
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简述:
30 V, 3 A PNP low VCEsat (BISS) transistor
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描述:
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.
NPN complement: PBSS4330PAS
- 数据手册:
特性
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
High temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) area requirements
Leadless small SMD plastic package with soldarable side pads
Exposed heat sink for excellent thermal and electrical conductivity
Suitable for Automatic Optical Inspection (AOI) of solder joint
AEC-Q101 qualified
目标应用
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
