PBSS5112PAP
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PBSS5112PAP
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商品编号:
PBSS5112PAP,115
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批次:
2347+
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简述:
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
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描述:
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.
- 数据手册:
库存: 0
特性
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High energy efficiency due to less heat generation
AEC-Q101 qualified
目标应用
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
数据手册
