PBSS4032NT
图像仅供参考
请参阅产品规格
PBSS4032NT
-
商品编号:
PBSS4032NT,215
-
简述:
30 V, 2.6 A NPN low VCEsat (BISS) transistor
-
描述:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
- 数据手册:
库存: 0
特性
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
目标应用
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
数据手册
