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PBSS302PD
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请参阅产品规格

PBSS302PD
  • 商品编号:
    PBSS302PDH
  • 简述:
    40 V, 4 A PNP low VCesat (BISS) transistor
  • 描述:

    PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

    NPN complement: PBSS302ND.

  • 数据手册:
    下载数据手册
库存: 0
数量:
单价: ¥1.333
总价: ¥1.333
价格（包含13%的增值税）
数量 单价 总价
1 ¥1.333 ¥1.333
500 ¥1.2119 ¥605.9500
1000 ¥1.1541 ¥1,154.1000
3000 ¥1.0992 ¥3,297.6000

特性

  • Ultra low collector-emitter saturation voltage VCEsat

  • 4 A continuous collector current capability IC

  • Up to 15 A peak current

  • Very low collector-emitter saturation resistance

  • High efficiency due to less heat generation

  • AEC-Q101 qualified

目标应用

  • Power management functions

  • Charging circuits

  • DC-to-DC conversion

  • MOSFET gate driving

  • Power switches (e.g. motors, fans)

  • Thin Film Transistor (TFT) backlight inverter

数据手册
下载数据手册

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