PBSM5240PF
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PBSM5240PF
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商品编号:
PBSM5240PF,115
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简述:
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET
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描述:
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.
- 数据手册:
库存: 0
特性
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
目标应用
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
数据手册
