PBRP123ET
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PBRP123ET
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商品编号:
PBRP123ET,215
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简述:
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
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描述:
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN123ET
- 数据手册:
库存: 99999999
特性
600 mA output current capability
Low collector-emitter saturation voltage VCEsat
High current gain hFE
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
± 10 % resistor ratio tolerance
目标应用
Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver
数据手册
