PBRP113ZT
图像仅供参考
请参阅产品规格
PBRP113ZT
-
商品编号:
PBRP113ZT-QR
-
简述:
Q - 40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ
-
描述:
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN113ZT-Q
- 数据手册:
库存: 0
特性
600 mA output current capability
Low collector-emitter saturation voltage VCEsat
High current gain hFE
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
± 10 % resistor ratio tolerance
Qualified according to AEC-Q101 and recommended for use in automotive applications
目标应用
Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver
数据手册
