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DFN0606 MOSFET：小封装里的高效器件
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
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DFN0606 MOSFET：小封装里的高效器件2
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
查看详情
DFN0606 MOSFET：小封装里的高效器件3
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
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GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
库存: 2465
1+: ¥19.2121
500+: ¥17.4656
1000+: ¥16.6339
3000+: ¥15.8418
1+: ¥19.2121
500+: ¥17.4656
1000+: ¥16.6339
3000+: ¥15.8418
2465
-
GAN140-650FBEZ
650FBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
库存: 2472
1+: ¥17.9242
500+: ¥16.2947
1000+: ¥15.5188
3000+: ¥14.7798
1+: ¥17.9242
500+: ¥16.2947
1000+: ¥15.5188
3000+: ¥14.7798
2472
-
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
库存: 2481
1+: ¥12.2357
500+: ¥11.1233
1000+: ¥10.5936
3000+: ¥10.0892
1+: ¥12.2357
500+: ¥11.1233
1000+: ¥10.5936
3000+: ¥10.0892
2481
-
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
库存: 2487
1+: ¥11.4843
500+: ¥10.4403
1000+: ¥9.9432
3000+: ¥9.4697
1+: ¥11.4843
500+: ¥10.4403
1000+: ¥9.9432
3000+: ¥9.4697
2487
-
GAN3R2-100CBEAZ
100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale
Package (WLCSP)
库存: 2970
1+: ¥14.2749
500+: ¥12.9772
1000+: ¥12.3592
3000+: ¥11.7707
1+: ¥14.2749
500+: ¥12.9772
1000+: ¥12.3592
3000+: ¥11.7707
2970
-
GAN7R0-150LBEZ
150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array
(LGA) package
库存: 989
1+: ¥10.7330
500+: ¥9.7573
1000+: ¥9.2927
3000+: ¥8.8502
1+: ¥10.7330
500+: ¥9.7573
1000+: ¥9.2927
3000+: ¥8.8502
989
-
MMBZ16VAT-QR
Q - Low capacitance unidirectional double ESD protection diode
库存: 0
1+: ¥0.1535
500+: ¥0.1395
1000+: ¥0.1329
3000+: ¥0.1266
1+: ¥0.1535
500+: ¥0.1395
1000+: ¥0.1329
3000+: ¥0.1266
0
-
MMBZ27VCT-QR
Q - Double ESD protection diode
库存: 99000
1+: ¥0.1535
500+: ¥0.1395
1000+: ¥0.1329
3000+: ¥0.1266
1+: ¥0.1535
500+: ¥0.1395
1000+: ¥0.1329
3000+: ¥0.1266
99000
-
MMBZ33VAT-QR
Q - Low capacitance unidirectional double ESD protection diode
库存: 0
1+: ¥0.1535
500+: ¥0.1395
1000+: ¥0.1329
3000+: ¥0.1266
1+: ¥0.1535
500+: ¥0.1395
1000+: ¥0.1329
3000+: ¥0.1266
0
-
MMBZ9V1AT-QR
Q - Low capacitance unidirectional double ESD protection diode
库存: 0
1+: ¥0.1535
500+: ¥0.1395
1000+: ¥0.1329
3000+: ¥0.1266
1+: ¥0.1535
500+: ¥0.1395
1000+: ¥0.1329
3000+: ¥0.1266
0
-
NBM5100BBQX
Coin cell battery life booster with adaptive power optimization
库存: 2837
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
2837
-
NBM7100ABQX
Coin cell battery life booster with adaptive power optimization
库存: 2697
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
1+: ¥6.7618
500+: ¥6.1471
1000+: ¥5.8544
3000+: ¥5.5756
2697
GAN140-650EBEZGAN140GAN140-650EBEZ650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package库存: 24651+: ¥19.2121500+: ¥17.46561000+: ¥16.63393000+: ¥15.84181+: ¥19.2121500+: ¥17.46561000+: ¥16.63393000+: ¥15.84182465
GAN140-650FBEZGAN140GAN140-650FBEZ650FBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package库存: 24721+: ¥17.9242500+: ¥16.29471000+: ¥15.51883000+: ¥14.77981+: ¥17.9242500+: ¥16.29471000+: ¥15.51883000+: ¥14.77982472
GAN190-650EBEZGAN190GAN190-650EBEZ650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package库存: 24811+: ¥12.2357500+: ¥11.12331000+: ¥10.59363000+: ¥10.08921+: ¥12.2357500+: ¥11.12331000+: ¥10.59363000+: ¥10.08922481
GAN190-650FBEZGAN190GAN190-650FBEZ650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package库存: 24871+: ¥11.4843500+: ¥10.44031000+: ¥9.94323000+: ¥9.46971+: ¥11.4843500+: ¥10.44031000+: ¥9.94323000+: ¥9.46972487
GAN3R2-100CBEAZGAN3R2GAN3R2-100CBEAZ100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)库存: 29701+: ¥14.2749500+: ¥12.97721000+: ¥12.35923000+: ¥11.77071+: ¥14.2749500+: ¥12.97721000+: ¥12.35923000+: ¥11.77072970
GAN7R0-150LBEZGAN7R0GAN7R0-150LBEZ150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package库存: 9891+: ¥10.7330500+: ¥9.75731000+: ¥9.29273000+: ¥8.85021+: ¥10.7330500+: ¥9.75731000+: ¥9.29273000+: ¥8.8502989
MMBZ16VAT-QRMMBZ16VATMMBZ16VAT-QRQ - Low capacitance unidirectional double ESD protection diode库存: 01+: ¥0.1535500+: ¥0.13951000+: ¥0.13293000+: ¥0.12661+: ¥0.1535500+: ¥0.13951000+: ¥0.13293000+: ¥0.12660
MMBZ27VCT-QRvp_MMBZ27VCTMMBZ27VCT-QRQ - Double ESD protection diode库存: 990001+: ¥0.1535500+: ¥0.13951000+: ¥0.13293000+: ¥0.12661+: ¥0.1535500+: ¥0.13951000+: ¥0.13293000+: ¥0.126699000
MMBZ33VAT-QRMMBZ33VATMMBZ33VAT-QRQ - Low capacitance unidirectional double ESD protection diode库存: 01+: ¥0.1535500+: ¥0.13951000+: ¥0.13293000+: ¥0.12661+: ¥0.1535500+: ¥0.13951000+: ¥0.13293000+: ¥0.12660
MMBZ9V1AT-QRMMBZ9V1ATMMBZ9V1AT-QRQ - Low capacitance unidirectional double ESD protection diode库存: 01+: ¥0.1535500+: ¥0.13951000+: ¥0.13293000+: ¥0.12661+: ¥0.1535500+: ¥0.13951000+: ¥0.13293000+: ¥0.12660
NBM5100BBQXNBM5100ANBM5100BBQXCoin cell battery life booster with adaptive power optimization库存: 28371+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57562837
NBM7100ABQXNBM7100ANBM7100ABQXCoin cell battery life booster with adaptive power optimization库存: 26971+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57561+: ¥6.7618500+: ¥6.14711000+: ¥5.85443000+: ¥5.57562697