图像仅供参考
请参阅产品规格
-
商品编号:
GAN7R0-150LBEZ
-
简述:
150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
-
描述:
The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance.
- 数据手册:
特性
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm
目标应用
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
400 V to 48 V LLC converters, secondary (rectification) side
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
