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请参阅产品规格
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商品编号:
PSMNR90-40YSNX
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简述:
40YSN - N-channel 40 V, 0.97 mOhm, 320 A, standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology.
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描述:
320 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
- 数据手册:
特性
320 A continuous ID(max)
Avalanche rated, 100% tested at IAS = 190 A
Low-spiking, allowing for high system efficiency and low EMI designs
NextPower-S3 technology delivers 'superfast switching' with soft body-diode recovery
Low QRR, spiking, ringing, and oscillation for high system efficiency and low EMI designs
Schottky-Plus body-diode with low VSD, and low IDSS leakage
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints for ultimate reliability
Low parasitic inductance and resistance
目标应用
- High-performance synchronous rectification
- DC-to-DC converters
- High performance and high efficiency server power supply
- Brushless DC motor control
- Battery protection
- Load-switch
- eFuse
