2PD2150
图像仅供参考
请参阅产品规格
2PD2150
-
商品编号:
2PD2150,115
- 简述:
-
描述:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: 2PB1424.
- 数据手册:
库存: 0
特性
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
目标应用
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
数据手册
