PSMN1R6
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PSMN1R6
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商品编号:
PSMN1R6-30MLHX
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简述:
30MLH - N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
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描述:
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications.
- 数据手册:
库存: 99999998
特性
Optimized for low RDSon
Low leakage < 1 µA at 25 °C
Low spiking and ringing for low EMI designs
Optimized for 4.5 V gate drive
160 A rated
High reliability copper-clip bonded and solder die attach LFPAK33 package
Qualified to 175 °C
Exposed leads for optimal visual solder inspection
目标应用
DC switch / load switch
USB-PD and fast-charge
Battery protection
OR-ing and hot-swap
Synchronous rectifier in AC-DC and DC-DC applications
Brushed and BLDC (brushless) motor control
数据手册