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NPN high-voltage transistor in a SOT223 (SC73) Surface-Mounted Device plastic package.
Low current (max. 300 mA)
High voltage (max. 400 V)
Telecommunication
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
600 V, 30 A trench field-stop IGBT with full rated silicon diode
650 V, 10 A SiC Schottky diode in TO-220-2 R2P
