JavaScript 似乎在您的浏览器中被禁用。 为了您在我们网站能获得最好的体验，建议在浏览器中打开Javascript。
暂无BOM订单
图像仅供参考
请参阅产品规格
NPN Darlington transistor in a SOT89 plastic package.
PNP complement: PXTA64.
High current (max. 500 mA)
Low voltage (max. 30 V).
AEC-Q101 qualified
High input impedance preamplifiers.
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
600 V, 30 A trench field-stop IGBT with full rated silicon diode
650 V, 10 A SiC Schottky diode in TO-220-2 R2P
