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商品编号:
PSMN6R1-25MLDX
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简述:
25MLD - N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
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描述:
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
- 数据手册:
特性
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C
Exposed leads for optimal visual solder inspection
目标应用
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
