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商品编号:
PSMN3R5-40YSD/2X
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简述:
40YSD - N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology
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描述:
120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
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特性
120 A capability
Avalanche rated, 100% tested at I(AS) = 120 A
NextPower-S3 technology delivers 'superfast switching with soft recovery'
Low QRR, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
Low VSD Schottky-like body-diode
Tighter VGS(th) limits for improved paralleling
Wide Safe Operating Area (SOA) for reliable linear mode operation
High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
目标应用
Synchronous rectification
DC-to-DC converters
High performance and high efficiency power supplies
BLDC motor control
