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商品编号:
PSMN2R5-40YLD/2X
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简述:
40YLD - N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology
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描述:
160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
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特性
160 A continuous ID(max) rating
Avalanche rated, 100% tested at IAS = 150 A
Strong SOA (linear-mode) rating
NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
Low QRR, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
Low parasitic inductance and resistance
目标应用
High-performance synchronous rectification
DC-to-DC converters
Brushless DC motor control
Battery protection
Load-switch and eFuse
