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商品编号:
PSMN2R2-40YSBX
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简述:
40YSB - N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology
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描述:
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.
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特性
Optimized for improved EMC Performance
180 A continuous ID(max) rating
Avalanche rated, 100% tested at IAS = 160 A
Strong SOA (linear-mode) rating
NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery'
Low Qrr, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability
Low parasitic inductance and resistance
目标应用
Automation, control and instrumentation
Autonomous systems, Robotics and Cobots
DC-to-DC converters
Brushless DC motor control
Brushed motors
Battery isolation
Industrial load-switch and eFuse
Inrush management, hotswap
