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商品编号:
PSMN1R0-40YSHX
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简述:
40YSH - N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology
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描述:
290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
- 数据手册:
特性
290 A continuous ID(max)
Avalanche rated, 100% tested
NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
Low QRR, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
Strong linear-mode / SOA rating
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints for ultimate reliability
Low parasitic inductance and resistance
目标应用
High-performance synchronous rectification
DC-to-DC converters
High performance and high efficiency server power supply
Brushless DC motor control
Battery protection
Load-switch and eFuse
