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商品编号:
PSMN0R9-30ULD/2X
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简述:
30ULD - N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595
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描述:
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications.
- 数据手册:
特性
Improved creepage and clearance – meets the requirements of UL2595
300 A capability
Avalanche rated, 100% tested at IAS = 190 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 150 °C
Wave solderable; exposed leads for optimal visual solder inspection
目标应用
Brushed and brushless motor control
Battery powered appliances where enhanced creepage and clearance is required to meet UL2595
For non-UL2595 applications please use PSMN0R9-30YLD
