PMXB65ENE
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PMXB65ENE
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商品编号:
PMXB65ENEZ
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简述:
30 V, N-channel Trench MOSFET
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描述:
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 600000
特性
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 44 mΩ
目标应用
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
数据手册
