PMXB350UPE
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PMXB350UPE
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商品编号:
PMXB350UPEZ
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简述:
20 V, P-channel Trench MOSFET
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描述:
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 5000
特性
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
目标应用
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
数据手册
