PMV213SN

PMV213SN

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PMV213SN

商品编号:
PMV213SN,215
简述:
N-channel TrenchMOS standard level FET
描述:
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology.
数据手册:
下载数据手册

库存: 98730999

数量:

单价: ¥0.9016

总价: ¥0.9016

价格（包含13%的增值税）

数量单价总价: 1 ¥0.9016 ¥0.9016; 500 ¥0.8196 ¥409.8000; 1000 ¥0.7806 ¥780.6000; 3000 ¥0.7434 ¥2,230.2000

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P