PMPB19R0UPE
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PMPB19R0UPE
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商品编号:
PMPB19R0UPEX
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简述:
20 V, P-channel Trench MOSFET
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描述:
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 36000
特性
Low threshold voltage
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 2000 V HBM (class H2)
目标应用
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
数据手册
