PMPB08R6EN
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PMPB08R6EN
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商品编号:
PMPB08R6ENX
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简述:
30 V, N-channel Trench MOSFET
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描述:
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 99999999
特性
Logic-level compatible
Very fast switching
Trench Superjunction Technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
目标应用
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
数据手册
