PMPB07R3EN
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PMPB07R3EN
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商品编号:
PMPB07R3ENH
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简述:
30 V, N-channel Trench MOSFET
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描述:
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 0
特性
Logic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
目标应用
DC to DC conversion
Battery management
Low-side load switch
Switching circuits
数据手册
