PMN28UNE

JavaScript 似乎在您的浏览器中被禁用。 为了您在我们网站能获得最好的体验，建议在浏览器中打开Javascript。

BOM配单新品推荐样品申请折扣专区停产产品汽车应用

跳到结尾的图片库

PMN28UNE

main product photo

图像仅供参考

请参阅产品规格

PMN28UNE

商品编号:
PMN28UNEX
简述:
20 V, N-channel Trench MOSFET
描述:
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
数据手册:
下载数据手册

跳转到图像库的开头

库存: 99999999

数量:

单价: ¥0.7331

总价: ¥0.7331

价格（包含13%的增值税）

数量单价总价: 1 ¥0.7331 ¥0.7331; 500 ¥0.6664 ¥333.2000; 1000 ¥0.6347 ¥634.7000; 3000 ¥0.6045 ¥1,813.5000

特性

Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM

目标应用

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

数据手册

下载数据手册

推荐产品

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P