PMGD780SN

JavaScript 似乎在您的浏览器中被禁用。 为了您在我们网站能获得最好的体验，建议在浏览器中打开Javascript。

BOM配单新品推荐样品申请折扣专区停产产品汽车应用

跳到结尾的图片库

PMGD780SN

main product photo

图像仅供参考

请参阅产品规格

PMGD780SN

商品编号:
PMGD780SN,115
简述:
Dual N-channel TrenchMOS standard level FET
描述:
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
数据手册:
下载数据手册

跳转到图像库的开头

库存: 99999999

数量:

单价: ¥0.4851

总价: ¥0.4851

价格（包含13%的增值税）

数量单价总价: 1 ¥0.4851 ¥0.4851; 500 ¥0.441 ¥220.5000; 1000 ¥0.42 ¥420.0000; 3000 ¥0.4 ¥1,200.0000

特性

Dual device
Fast switching
Footprint 40 % smaller than SOT23
Low on-state resistance
Standard level threshold voltage
Surface-mounted package

目标应用

Driver circuits
Switching in portable appliances

数据手册

下载数据手册

推荐产品

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P